JP2013232513A5 - - Google Patents
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- Publication number
- JP2013232513A5 JP2013232513A5 JP2012103529A JP2012103529A JP2013232513A5 JP 2013232513 A5 JP2013232513 A5 JP 2013232513A5 JP 2012103529 A JP2012103529 A JP 2012103529A JP 2012103529 A JP2012103529 A JP 2012103529A JP 2013232513 A5 JP2013232513 A5 JP 2013232513A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- etching
- mask
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012103529A JP5970736B2 (ja) | 2012-04-27 | 2012-04-27 | 半導体装置の製造方法 |
| US13/872,347 US20130288401A1 (en) | 2012-04-27 | 2013-04-29 | Method for fabricating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012103529A JP5970736B2 (ja) | 2012-04-27 | 2012-04-27 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013232513A JP2013232513A (ja) | 2013-11-14 |
| JP2013232513A5 true JP2013232513A5 (enExample) | 2015-05-07 |
| JP5970736B2 JP5970736B2 (ja) | 2016-08-17 |
Family
ID=49477657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012103529A Active JP5970736B2 (ja) | 2012-04-27 | 2012-04-27 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20130288401A1 (enExample) |
| JP (1) | JP5970736B2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6003213B2 (ja) * | 2012-05-17 | 2016-10-05 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| US9779988B2 (en) * | 2013-12-20 | 2017-10-03 | Nxp Usa, Inc. | Semiconductor devices with inner via |
| WO2015093406A1 (ja) * | 2013-12-20 | 2015-06-25 | 日本碍子株式会社 | 窒化ガリウム層を含む基板およびその製造方法 |
| JP6104858B2 (ja) * | 2014-08-20 | 2017-03-29 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| EP3552238A4 (en) * | 2016-12-06 | 2020-11-04 | Qromis, Inc. | HIGH MOBILITY ELECTRONIC HORIZONTAL TRANSISTOR WITH INTEGRATED LEVEL DIODE |
| CN107068611A (zh) * | 2016-12-23 | 2017-08-18 | 苏州能讯高能半导体有限公司 | 半导体芯片、半导体晶圆及半导体晶圆的制造方法 |
| CN107980171B (zh) * | 2016-12-23 | 2022-06-24 | 苏州能讯高能半导体有限公司 | 半导体芯片、半导体晶圆及半导体晶圆的制造方法 |
| DE102017103111B4 (de) * | 2017-02-16 | 2025-03-13 | Semikron Elektronik Gmbh & Co. Kg | Halbleiterdiode und elektronische Schaltungsanordnung hiermit |
| US10224285B2 (en) | 2017-02-21 | 2019-03-05 | Raytheon Company | Nitride structure having gold-free contact and methods for forming such structures |
| US10096550B2 (en) | 2017-02-21 | 2018-10-09 | Raytheon Company | Nitride structure having gold-free contact and methods for forming such structures |
| CN109671774B (zh) * | 2017-10-16 | 2020-08-21 | 苏州能讯高能半导体有限公司 | 半导体器件及其制造方法 |
| WO2019150526A1 (ja) * | 2018-02-01 | 2019-08-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP7215800B2 (ja) * | 2019-02-19 | 2023-01-31 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法および半導体装置 |
| GB2593864B (en) * | 2020-02-28 | 2023-01-04 | X Fab France Sas | Improved transfer printing for RF applications |
| JP2023062209A (ja) * | 2020-03-12 | 2023-05-08 | 住友電工デバイス・イノベーション株式会社 | 半導体デバイス及び半導体デバイスの製造方法 |
| US11270928B2 (en) * | 2020-04-02 | 2022-03-08 | Macom Technology Solutions Holdings, Inc. | Unibody lateral via |
| US11437301B2 (en) * | 2020-10-15 | 2022-09-06 | Nxp Usa, Inc. | Device with an etch stop layer and method therefor |
| US12382697B2 (en) * | 2020-12-22 | 2025-08-05 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
| JP7625455B2 (ja) * | 2021-03-19 | 2025-02-03 | 株式会社東芝 | 半導体装置の製造方法 |
| US12362294B2 (en) * | 2021-06-03 | 2025-07-15 | Nxp Usa, Inc. | Wafer with semiconductor devices and integrated electrostatic discharge protection |
| US20230343703A1 (en) * | 2022-04-22 | 2023-10-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device including through via and method of making |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2591429B2 (ja) * | 1993-06-28 | 1997-03-19 | 日本電気株式会社 | 磁気抵抗素子 |
| US5406122A (en) * | 1993-10-27 | 1995-04-11 | Hughes Aircraft Company | Microelectronic circuit structure including conductor bridges encapsulated in inorganic dielectric passivation layer |
| US7892974B2 (en) * | 2000-04-11 | 2011-02-22 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
| JP4936695B2 (ja) * | 2004-09-29 | 2012-05-23 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
| JP4089752B2 (ja) * | 2007-05-21 | 2008-05-28 | サンケン電気株式会社 | 半導体装置の製造方法 |
| EP2107611A1 (en) * | 2008-03-31 | 2009-10-07 | Kabushiki Kaisha Toshiba | Field effect transistor with Ti adhesion layer under the gate electrode |
| JP5604855B2 (ja) * | 2009-11-17 | 2014-10-15 | 富士通株式会社 | 半導体装置及びその製造方法 |
| WO2012014675A1 (ja) * | 2010-07-29 | 2012-02-02 | 日本碍子株式会社 | 半導体素子、ｈｅｍｔ素子、および半導体素子の製造方法 |
| US8519548B2 (en) * | 2010-11-19 | 2013-08-27 | Electronics And Telecommunications Research Institute | Wafer level packaged GaN power device and the manufacturing method thereof |
-
2012
- 2012-04-27 JP JP2012103529A patent/JP5970736B2/ja active Active
-
2013
- 2013-04-29 US US13/872,347 patent/US20130288401A1/en not_active Abandoned