JP5970736B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5970736B2
JP5970736B2 JP2012103529A JP2012103529A JP5970736B2 JP 5970736 B2 JP5970736 B2 JP 5970736B2 JP 2012103529 A JP2012103529 A JP 2012103529A JP 2012103529 A JP2012103529 A JP 2012103529A JP 5970736 B2 JP5970736 B2 JP 5970736B2
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Japan
Prior art keywords
layer
opening
etching
substrate
monitor
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JP2012103529A
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English (en)
Japanese (ja)
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JP2013232513A5 (enExample
JP2013232513A (ja
Inventor
一暁 松浦
一暁 松浦
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2012103529A priority Critical patent/JP5970736B2/ja
Priority to US13/872,347 priority patent/US20130288401A1/en
Publication of JP2013232513A publication Critical patent/JP2013232513A/ja
Publication of JP2013232513A5 publication Critical patent/JP2013232513A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP2012103529A 2012-04-27 2012-04-27 半導体装置の製造方法 Active JP5970736B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012103529A JP5970736B2 (ja) 2012-04-27 2012-04-27 半導体装置の製造方法
US13/872,347 US20130288401A1 (en) 2012-04-27 2013-04-29 Method for fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012103529A JP5970736B2 (ja) 2012-04-27 2012-04-27 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013232513A JP2013232513A (ja) 2013-11-14
JP2013232513A5 JP2013232513A5 (enExample) 2015-05-07
JP5970736B2 true JP5970736B2 (ja) 2016-08-17

Family

ID=49477657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012103529A Active JP5970736B2 (ja) 2012-04-27 2012-04-27 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US20130288401A1 (enExample)
JP (1) JP5970736B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6003213B2 (ja) * 2012-05-17 2016-10-05 住友電気工業株式会社 半導体装置の製造方法
US9779988B2 (en) * 2013-12-20 2017-10-03 Nxp Usa, Inc. Semiconductor devices with inner via
JP5832058B1 (ja) * 2013-12-20 2015-12-16 日本碍子株式会社 窒化ガリウム層を含む基板およびその製造方法
JP6104858B2 (ja) * 2014-08-20 2017-03-29 株式会社東芝 半導体装置および半導体装置の製造方法
EP3552238A4 (en) * 2016-12-06 2020-11-04 Qromis, Inc. HIGH MOBILITY ELECTRONIC HORIZONTAL TRANSISTOR WITH INTEGRATED LEVEL DIODE
CN107068611A (zh) * 2016-12-23 2017-08-18 苏州能讯高能半导体有限公司 半导体芯片、半导体晶圆及半导体晶圆的制造方法
CN107980171B (zh) * 2016-12-23 2022-06-24 苏州能讯高能半导体有限公司 半导体芯片、半导体晶圆及半导体晶圆的制造方法
DE102017103111B4 (de) * 2017-02-16 2025-03-13 Semikron Elektronik Gmbh & Co. Kg Halbleiterdiode und elektronische Schaltungsanordnung hiermit
US10096550B2 (en) 2017-02-21 2018-10-09 Raytheon Company Nitride structure having gold-free contact and methods for forming such structures
US10224285B2 (en) * 2017-02-21 2019-03-05 Raytheon Company Nitride structure having gold-free contact and methods for forming such structures
CN109671774B (zh) * 2017-10-16 2020-08-21 苏州能讯高能半导体有限公司 半导体器件及其制造方法
KR102327745B1 (ko) * 2018-02-01 2021-11-17 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그의 제조 방법
JP7215800B2 (ja) * 2019-02-19 2023-01-31 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法および半導体装置
GB2593864B (en) * 2020-02-28 2023-01-04 X Fab France Sas Improved transfer printing for RF applications
JP2023062209A (ja) * 2020-03-12 2023-05-08 住友電工デバイス・イノベーション株式会社 半導体デバイス及び半導体デバイスの製造方法
US11270928B2 (en) * 2020-04-02 2022-03-08 Macom Technology Solutions Holdings, Inc. Unibody lateral via
US11437301B2 (en) * 2020-10-15 2022-09-06 Nxp Usa, Inc. Device with an etch stop layer and method therefor
WO2022137347A1 (ja) * 2020-12-22 2022-06-30 三菱電機株式会社 半導体装置及びその製造方法
JP7625455B2 (ja) * 2021-03-19 2025-02-03 株式会社東芝 半導体装置の製造方法
US12362294B2 (en) * 2021-06-03 2025-07-15 Nxp Usa, Inc. Wafer with semiconductor devices and integrated electrostatic discharge protection
US20230343703A1 (en) * 2022-04-22 2023-10-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including through via and method of making

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2591429B2 (ja) * 1993-06-28 1997-03-19 日本電気株式会社 磁気抵抗素子
US5406122A (en) * 1993-10-27 1995-04-11 Hughes Aircraft Company Microelectronic circuit structure including conductor bridges encapsulated in inorganic dielectric passivation layer
US7892974B2 (en) * 2000-04-11 2011-02-22 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
JP4936695B2 (ja) * 2004-09-29 2012-05-23 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP4089752B2 (ja) * 2007-05-21 2008-05-28 サンケン電気株式会社 半導体装置の製造方法
EP2107611A1 (en) * 2008-03-31 2009-10-07 Kabushiki Kaisha Toshiba Field effect transistor with Ti adhesion layer under the gate electrode
JP5604855B2 (ja) * 2009-11-17 2014-10-15 富士通株式会社 半導体装置及びその製造方法
JPWO2012014675A1 (ja) * 2010-07-29 2013-09-12 日本碍子株式会社 半導体素子、ｈｅｍｔ素子、および半導体素子の製造方法
US8519548B2 (en) * 2010-11-19 2013-08-27 Electronics And Telecommunications Research Institute Wafer level packaged GaN power device and the manufacturing method thereof

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JP2013232513A (ja) 2013-11-14

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