JP6971229B2 - 底部処理 - Google Patents

底部処理 Download PDF

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Publication number
JP6971229B2
JP6971229B2 JP2018523481A JP2018523481A JP6971229B2 JP 6971229 B2 JP6971229 B2 JP 6971229B2 JP 2018523481 A JP2018523481 A JP 2018523481A JP 2018523481 A JP2018523481 A JP 2018523481A JP 6971229 B2 JP6971229 B2 JP 6971229B2
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substrate
strain
back side
annealing
chamber
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JP2018536990A5 (enExample
JP2018536990A (ja
Inventor
ジョゼフ エム． ラニッシュ，
アーロン ミュアー ハンター，
スワミナサン ティー． スリニバサン，
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Applied Materials Inc
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Applied Materials Inc
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    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
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    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
JP2018523481A 2015-11-09 2016-10-10 底部処理 Active JP6971229B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562252901P 2015-11-09 2015-11-09
US62/252,901 2015-11-09
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