JP6557588B2 - ドライエッチング方法 - Google Patents
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- JP6557588B2 JP6557588B2 JP2015237091A JP2015237091A JP6557588B2 JP 6557588 B2 JP6557588 B2 JP 6557588B2 JP 2015237091 A JP2015237091 A JP 2015237091A JP 2015237091 A JP2015237091 A JP 2015237091A JP 6557588 B2 JP6557588 B2 JP 6557588B2
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- 238000000034 method Methods 0.000 title claims description 35
- 238000001312 dry etching Methods 0.000 title claims description 13
- 238000005530 etching Methods 0.000 claims description 75
- 239000007789 gas Substances 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000011261 inert gas Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 238000000992 sputter etching Methods 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 description 36
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 241000237509 Patinopecten sp. Species 0.000 description 1
- -1 SiN Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 235000020637 scallop Nutrition 0.000 description 1
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Description
T=(W/2)/S (1)
T=エッチング時間(秒)
W=パターン間のスペース幅(nm)
S=エッチング速度(nm/秒)
(1)式より本実施例では、パターン間のスペース幅が40nm、エッチング速度が1.0nm/秒であったことから、反応性イオンアシストエッチステップの処理時間を20秒と設定した。よって、より裾引き形状を効率よく除去するためには、(1)式で求められる処理時間以下の時間によりイオンアシストエッチステップを挿入する必要がある。言い換えると、反応性イオンアシストエッチステップの処理時間は、(1)式で求められる時間以下の時間とすれば良い。
102 SiO2膜
103 SiN膜
Claims (4)
- 試料台に載置された試料に成膜された被エッチング膜をマスクを用いて所定の深さまでプラズマエッチングするドライエッチング方法において、
反応性ガスを用いて前記被エッチング膜をプラズマエッチングすることにより前記被エッチング膜のエッチング形状を裾引き形状とする第一の工程と、
前記第一の工程後、前記第一の工程にてエッチングされた被エッチング膜を不活性ガスのみを用いてスパッタエッチングする第二の工程とを有し、
前記所定の深さに到達するまで前記第一の工程と前記第二の工程を繰り返し、
前記第二の工程の前記試料台に供給する高周波バイアス電力を前記第一の工程の前記試料台に供給する高周波バイアス電力より高くし、
前記被エッチング膜は、シリコン基板、ポリシリコン膜、シリコンゲルマニウム膜(SiGe)、アモルファスシリコン膜、タングステンシリサイド膜(WSi)、酸化シリコン膜(SiO 2 )、窒化シリコン膜(SiN)、炭化シリコン膜(SiC)または炭素添加酸化シリコン膜(SiOC)であることを特徴とするドライエッチング方法。 - 試料台に載置された試料に成膜された被エッチング膜をマスクを用いて所定の深さまでプラズマエッチングするドライエッチング方法において、
反応性ガスを用いて前記被エッチング膜をプラズマエッチングすることにより前記被エッチング膜のエッチング形状を裾引き形状とする第一の工程と、
前記第一の工程後、前記第一の工程にてエッチングされた被エッチング膜を不活性ガスのみを用いてスパッタエッチングする第二の工程とを有し、
前記所定の深さに到達するまで前記第一の工程と前記第二の工程を繰り返し、
前記第一の工程の時間は、前記マスクのパターン間のスペース幅を半分にした値を前記第一の工程のエッチング速度により除した値以下の時間であり、
前記被エッチング膜は、シリコン基板、ポリシリコン膜、シリコンゲルマニウム膜(SiGe)、アモルファスシリコン膜、タングステンシリサイド膜(WSi)、酸化シリコン膜(SiO 2 )、窒化シリコン膜(SiN)、炭化シリコン膜(SiC)または炭素添加酸化シリコン膜(SiOC)であることを特徴とするドライエッチング方法。 - 請求項1または請求項2に記載のドライエッチング方法において、
前記不活性ガスは、Heガス、Neガス、Arガス、Krガス、Xeガス、N 2 ガスの中の少なくともいずれか一つのガスであることを特徴とするドライエッチング方法。 - 請求項2に記載のドライエッチング方法において、
前記第二の工程の前記試料台に供給する高周波バイアス電力を前記第一の工程の前記試料台に供給する高周波バイアス電力より高くすることを特徴とするドライエッチング方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2015237091A JP6557588B2 (ja) | 2015-12-04 | 2015-12-04 | ドライエッチング方法 |
KR1020160098401A KR101870221B1 (ko) | 2015-12-04 | 2016-08-02 | 드라이 에칭 방법 |
TW105126381A TWI630655B (zh) | 2015-12-04 | 2016-08-18 | Dry etching method |
US15/248,171 US10192749B2 (en) | 2015-12-04 | 2016-08-26 | Dry-etching method |
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JP2015237091A JP6557588B2 (ja) | 2015-12-04 | 2015-12-04 | ドライエッチング方法 |
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JP2017103403A JP2017103403A (ja) | 2017-06-08 |
JP2017103403A5 JP2017103403A5 (ja) | 2018-02-01 |
JP6557588B2 true JP6557588B2 (ja) | 2019-08-07 |
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US (1) | US10192749B2 (ja) |
JP (1) | JP6557588B2 (ja) |
KR (1) | KR101870221B1 (ja) |
TW (1) | TWI630655B (ja) |
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JPH0665214B2 (ja) | 1985-05-17 | 1994-08-22 | 日本電信電話株式会社 | 半導体装置の製造方法 |
JP3094470B2 (ja) * | 1991-01-22 | 2000-10-03 | ソニー株式会社 | ドライエッチング方法 |
JPH04354331A (ja) * | 1991-05-31 | 1992-12-08 | Sony Corp | ドライエッチング方法 |
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