TW201335991A - 電漿蝕刻方法 - Google Patents
電漿蝕刻方法 Download PDFInfo
- Publication number
- TW201335991A TW201335991A TW101139495A TW101139495A TW201335991A TW 201335991 A TW201335991 A TW 201335991A TW 101139495 A TW101139495 A TW 101139495A TW 101139495 A TW101139495 A TW 101139495A TW 201335991 A TW201335991 A TW 201335991A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- gas
- etched
- tantalum nitride
- etching
- Prior art date
Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 116
- 239000007789 gas Substances 0.000 claims description 187
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 120
- 239000000758 substrate Substances 0.000 claims description 50
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 39
- 229910052732 germanium Inorganic materials 0.000 claims description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 31
- 229920005591 polysilicon Polymers 0.000 claims description 25
- 229910018557 Si O Inorganic materials 0.000 claims description 24
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 24
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 23
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 15
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 15
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 229910004529 TaF 5 Inorganic materials 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 22
- 229910052715 tantalum Inorganic materials 0.000 description 21
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 20
- 238000012545 processing Methods 0.000 description 18
- 125000006850 spacer group Chemical group 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 13
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 13
- 229910001936 tantalum oxide Inorganic materials 0.000 description 13
- 230000001965 increasing effect Effects 0.000 description 12
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 229910052707 ruthenium Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 4
- -1 ruthenium nitride Chemical class 0.000 description 4
- 229910003468 tantalcarbide Inorganic materials 0.000 description 4
- 229910007991 Si-N Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910006294 Si—N Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000012552 review Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910008045 Si-Si Inorganic materials 0.000 description 2
- 229910006411 Si—Si Inorganic materials 0.000 description 2
- OPICPBLVZCCONG-UHFFFAOYSA-N [Ta].[C]=O Chemical compound [Ta].[C]=O OPICPBLVZCCONG-UHFFFAOYSA-N 0.000 description 2
- 125000005626 carbonium group Chemical group 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
- H01L21/32132—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011238166 | 2011-10-31 | ||
| JP2012229411A JP5932599B2 (ja) | 2011-10-31 | 2012-10-17 | プラズマエッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201335991A true TW201335991A (zh) | 2013-09-01 |
| TWI560770B TWI560770B (enExample) | 2016-12-01 |
Family
ID=48610539
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101139495A TW201335991A (zh) | 2011-10-31 | 2012-10-25 | 電漿蝕刻方法 |
| TW105122740A TWI600083B (zh) | 2011-10-31 | 2012-10-25 | Plasma etching method |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105122740A TWI600083B (zh) | 2011-10-31 | 2012-10-25 | Plasma etching method |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8741166B2 (enExample) |
| JP (1) | JP5932599B2 (enExample) |
| KR (1) | KR101405175B1 (enExample) |
| TW (2) | TW201335991A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI775819B (zh) * | 2017-03-10 | 2022-09-01 | 日商東京威力科創股份有限公司 | 蝕刻方法 |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6289996B2 (ja) * | 2014-05-14 | 2018-03-07 | 東京エレクトロン株式会社 | 被エッチング層をエッチングする方法 |
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| US9911620B2 (en) * | 2015-02-23 | 2018-03-06 | Lam Research Corporation | Method for achieving ultra-high selectivity while etching silicon nitride |
| US10957561B2 (en) | 2015-07-30 | 2021-03-23 | Lam Research Corporation | Gas delivery system |
| US9837286B2 (en) | 2015-09-04 | 2017-12-05 | Lam Research Corporation | Systems and methods for selectively etching tungsten in a downstream reactor |
| US10192751B2 (en) | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
| JP6557588B2 (ja) * | 2015-12-04 | 2019-08-07 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| US10825659B2 (en) | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
| US10147588B2 (en) | 2016-02-12 | 2018-12-04 | Lam Research Corporation | System and method for increasing electron density levels in a plasma of a substrate processing system |
| US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
| US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
| US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
| US9673058B1 (en) | 2016-03-14 | 2017-06-06 | Lam Research Corporation | Method for etching features in dielectric layers |
| US10410832B2 (en) | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
| FR3065576B1 (fr) * | 2017-04-25 | 2020-01-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de gravure d'une couche a base de sin |
| US10847374B2 (en) | 2017-10-31 | 2020-11-24 | Lam Research Corporation | Method for etching features in a stack |
| CN118380375A (zh) | 2017-11-21 | 2024-07-23 | 朗姆研究公司 | 底部边缘环和中部边缘环 |
| US10361092B1 (en) | 2018-02-23 | 2019-07-23 | Lam Research Corporation | Etching features using metal passivation |
| US10283370B1 (en) * | 2018-03-01 | 2019-05-07 | Applied Materials, Inc. | Silicon addition for silicon nitride etching selectivity |
| JP6811202B2 (ja) * | 2018-04-17 | 2021-01-13 | 東京エレクトロン株式会社 | エッチングする方法及びプラズマ処理装置 |
| US10515821B1 (en) | 2018-06-26 | 2019-12-24 | Lam Research Corporation | Method of achieving high selectivity for high aspect ratio dielectric etch |
| US10741407B2 (en) | 2018-10-19 | 2020-08-11 | Lam Research Corporation | Reduction of sidewall notching for high aspect ratio 3D NAND etch |
| CN113544823B (zh) * | 2020-02-10 | 2024-04-12 | 株式会社日立高新技术 | 等离子处理方法 |
| KR20250099767A (ko) * | 2020-02-28 | 2025-07-02 | 램 리써치 코포레이션 | 고 종횡비 3D NAND 에칭을 위한 측벽 노칭 (notching) 감소 |
| JP7466686B2 (ja) | 2020-03-23 | 2024-04-12 | ラム リサーチ コーポレーション | 基板処理システムにおける中間リング腐食補償 |
| CN113471049B (zh) | 2021-06-30 | 2022-07-26 | 北京屹唐半导体科技股份有限公司 | 用于处理工件的方法及等离子体刻蚀机、半导体器件 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4793897A (en) * | 1987-03-20 | 1988-12-27 | Applied Materials, Inc. | Selective thin film etch process |
| EP0424299A3 (en) * | 1989-10-20 | 1991-08-28 | International Business Machines Corporation | Selective silicon nitride plasma etching |
| JP3210359B2 (ja) * | 1991-05-29 | 2001-09-17 | 株式会社東芝 | ドライエッチング方法 |
| JP3172340B2 (ja) * | 1993-08-12 | 2001-06-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP3681533B2 (ja) | 1997-02-25 | 2005-08-10 | 富士通株式会社 | 窒化シリコン層のエッチング方法及び半導体装置の製造方法 |
| US5786276A (en) * | 1997-03-31 | 1998-07-28 | Applied Materials, Inc. | Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2 |
| JP3439455B2 (ja) * | 2000-12-18 | 2003-08-25 | Ｎｅｃエレクトロニクス株式会社 | 異方性ドライエッチング方法 |
| US6800210B2 (en) * | 2001-05-22 | 2004-10-05 | Reflectivity, Inc. | Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants |
| US7098141B1 (en) * | 2003-03-03 | 2006-08-29 | Lam Research Corporation | Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures |
| GB0401622D0 (en) * | 2004-01-26 | 2004-02-25 | Oxford Instr Plasma Technology | Plasma etching process |
| KR100780944B1 (ko) * | 2005-10-12 | 2007-12-03 | 삼성전자주식회사 | 탄소함유막 식각 방법 및 이를 이용한 반도체 소자의 제조방법 |
| US7393788B2 (en) * | 2006-02-10 | 2008-07-01 | Cook Julie A | Method and system for selectively etching a dielectric material relative to silicon |
| JP5209859B2 (ja) | 2006-09-19 | 2013-06-12 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
| US20110223770A1 (en) * | 2010-03-15 | 2011-09-15 | Lam Research Corporation | Nitride plasma etch with highly tunable selectivity to oxide |
| US20130344702A1 (en) * | 2011-03-04 | 2013-12-26 | Tokyo Electron Limited | Method of etching silicon nitride films |
-
2012
- 2012-10-17 JP JP2012229411A patent/JP5932599B2/ja active Active
- 2012-10-25 TW TW101139495A patent/TW201335991A/zh unknown
- 2012-10-25 TW TW105122740A patent/TWI600083B/zh active
- 2012-10-30 KR KR1020120121063A patent/KR101405175B1/ko active Active
- 2012-10-31 US US13/664,940 patent/US8741166B2/en active Active
-
2014
- 2014-04-09 US US14/248,844 patent/US8889024B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI775819B (zh) * | 2017-03-10 | 2022-09-01 | 日商東京威力科創股份有限公司 | 蝕刻方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5932599B2 (ja) | 2016-06-08 |
| US20130157470A1 (en) | 2013-06-20 |
| US8889024B2 (en) | 2014-11-18 |
| TW201639029A (zh) | 2016-11-01 |
| US8741166B2 (en) | 2014-06-03 |
| KR20130047663A (ko) | 2013-05-08 |
| US20140220785A1 (en) | 2014-08-07 |
| JP2013118359A (ja) | 2013-06-13 |
| TWI560770B (enExample) | 2016-12-01 |
| TWI600083B (zh) | 2017-09-21 |
| KR101405175B1 (ko) | 2014-06-10 |
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