JP2015533029A5 - - Google Patents
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- JP2015533029A5 JP2015533029A5 JP2015539935A JP2015539935A JP2015533029A5 JP 2015533029 A5 JP2015533029 A5 JP 2015533029A5 JP 2015539935 A JP2015539935 A JP 2015539935A JP 2015539935 A JP2015539935 A JP 2015539935A JP 2015533029 A5 JP2015533029 A5 JP 2015533029A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- gas
- thin film
- etching
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007789 gas Substances 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 18
- 239000007800 oxidant agent Substances 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- LMSLTAIWOIYSGZ-LWMBPPNESA-N (3s,4s)-1,1,2,2,3,4-hexafluorocyclobutane Chemical compound F[C@H]1[C@H](F)C(F)(F)C1(F)F LMSLTAIWOIYSGZ-LWMBPPNESA-N 0.000 claims description 4
- NLOLSXYRJFEOTA-OWOJBTEDSA-N (e)-1,1,1,4,4,4-hexafluorobut-2-ene Chemical compound FC(F)(F)\C=C\C(F)(F)F NLOLSXYRJFEOTA-OWOJBTEDSA-N 0.000 claims description 4
- NLOLSXYRJFEOTA-UPHRSURJSA-N (z)-1,1,1,4,4,4-hexafluorobut-2-ene Chemical compound FC(F)(F)\C=C/C(F)(F)F NLOLSXYRJFEOTA-UPHRSURJSA-N 0.000 claims description 4
- CCVRBOAAPJPHKL-UHFFFAOYSA-N 1,1,2,2,3-pentafluorocyclobutane Chemical compound FC1CC(F)(F)C1(F)F CCVRBOAAPJPHKL-UHFFFAOYSA-N 0.000 claims description 4
- QMIWYOZFFSLIAK-UHFFFAOYSA-N 3,3,3-trifluoro-2-(trifluoromethyl)prop-1-ene Chemical compound FC(F)(F)C(=C)C(F)(F)F QMIWYOZFFSLIAK-UHFFFAOYSA-N 0.000 claims description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- LMSLTAIWOIYSGZ-XIXRPRMCSA-N (3s,4r)-1,1,2,2,3,4-hexafluorocyclobutane Chemical compound F[C@H]1[C@@H](F)C(F)(F)C1(F)F LMSLTAIWOIYSGZ-XIXRPRMCSA-N 0.000 claims description 3
- AKQMZZOTFNLAQJ-UHFFFAOYSA-N 1,1,2,2-tetrafluorocyclobutane Chemical compound FC1(F)CCC1(F)F AKQMZZOTFNLAQJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000006227 byproduct Substances 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 4
- 238000001020 plasma etching Methods 0.000 claims 4
- 239000010408 film Substances 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 101710178035 Chorismate synthase 2 Proteins 0.000 claims 1
- 101710152694 Cysteine synthase 2 Proteins 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261720139P | 2012-10-30 | 2012-10-30 | |
| US61/720,139 | 2012-10-30 | ||
| PCT/US2013/067415 WO2014070838A1 (en) | 2012-10-30 | 2013-10-30 | Fluorocarbon molecules for high aspect ratio oxide etch |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017233163A Division JP6527214B2 (ja) | 2012-10-30 | 2017-12-05 | エッチング耐性ポリマー層を堆積させる方法及びパターンエッチング構造の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015533029A JP2015533029A (ja) | 2015-11-16 |
| JP2015533029A5 true JP2015533029A5 (enExample) | 2016-11-17 |
| JP6257638B2 JP6257638B2 (ja) | 2018-01-10 |
Family
ID=50628017
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015539935A Active JP6257638B2 (ja) | 2012-10-30 | 2013-10-30 | 高アスペクト比酸化物エッチング用のフルオロカーボン分子 |
| JP2017233163A Active JP6527214B2 (ja) | 2012-10-30 | 2017-12-05 | エッチング耐性ポリマー層を堆積させる方法及びパターンエッチング構造の製造方法 |
| JP2019088964A Active JP6811284B2 (ja) | 2012-10-30 | 2019-05-09 | ３ｄ ｎａｎｄフラッシュメモリの製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017233163A Active JP6527214B2 (ja) | 2012-10-30 | 2017-12-05 | エッチング耐性ポリマー層を堆積させる方法及びパターンエッチング構造の製造方法 |
| JP2019088964A Active JP6811284B2 (ja) | 2012-10-30 | 2019-05-09 | ３ｄ ｎａｎｄフラッシュメモリの製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US9514959B2 (enExample) |
| JP (3) | JP6257638B2 (enExample) |
| KR (3) | KR102048959B1 (enExample) |
| CN (2) | CN104885203B (enExample) |
| SG (3) | SG11201503321XA (enExample) |
| TW (2) | TWI588240B (enExample) |
| WO (1) | WO2014070838A1 (enExample) |
Families Citing this family (74)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8501631B2 (en) | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
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| US10325759B2 (en) | 2012-02-22 | 2019-06-18 | Lam Research Corporation | Multiple control modes |
| US9320126B2 (en) | 2012-12-17 | 2016-04-19 | Lam Research Corporation | Determining a value of a variable on an RF transmission model |
| US9502216B2 (en) | 2013-01-31 | 2016-11-22 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
| US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
| US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
| US9842725B2 (en) | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
| US9295148B2 (en) | 2012-12-14 | 2016-03-22 | Lam Research Corporation | Computation of statistics for statistical data decimation |
| US9390893B2 (en) | 2012-02-22 | 2016-07-12 | Lam Research Corporation | Sub-pulsing during a state |
| US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
| US9171699B2 (en) | 2012-02-22 | 2015-10-27 | Lam Research Corporation | Impedance-based adjustment of power and frequency |
| US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
| US9368329B2 (en) | 2012-02-22 | 2016-06-14 | Lam Research Corporation | Methods and apparatus for synchronizing RF pulses in a plasma processing system |
| US9155182B2 (en) | 2013-01-11 | 2015-10-06 | Lam Research Corporation | Tuning a parameter associated with plasma impedance |
| US9779196B2 (en) | 2013-01-31 | 2017-10-03 | Lam Research Corporation | Segmenting a model within a plasma system |
| US9620337B2 (en) | 2013-01-31 | 2017-04-11 | Lam Research Corporation | Determining a malfunctioning device in a plasma system |
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| US9594105B2 (en) | 2014-01-10 | 2017-03-14 | Lam Research Corporation | Cable power loss determination for virtual metrology |
| JP2015170763A (ja) * | 2014-03-07 | 2015-09-28 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| MY181686A (en) * | 2014-04-08 | 2020-12-31 | Nipro Corp | Medical valve |
| US10950421B2 (en) | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
| JP6360770B2 (ja) * | 2014-06-02 | 2018-07-18 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| TWI733431B (zh) | 2014-06-18 | 2021-07-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用於tsv/mems/功率元件蝕刻的化學物質 |
| KR102333443B1 (ko) * | 2014-10-24 | 2021-12-02 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| US9536749B2 (en) | 2014-12-15 | 2017-01-03 | Lam Research Corporation | Ion energy control by RF pulse shape |
| SG11201705639VA (en) | 2015-01-22 | 2017-08-30 | Zeon Corp | Plasma etching method |
| US10544329B2 (en) | 2015-04-13 | 2020-01-28 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
| US9728421B2 (en) * | 2015-12-31 | 2017-08-08 | International Business Machines Corporation | High aspect ratio patterning of hard mask materials by organic soft masks |
| US10599039B2 (en) * | 2016-09-14 | 2020-03-24 | Mattson Technology, Inc. | Strip process for high aspect ratio structure |
| CN109997212B (zh) * | 2016-11-29 | 2023-06-13 | 朗姆研究公司 | 在有机层蚀刻中生成竖直轮廓的方法 |
| CN110050331B (zh) * | 2016-12-09 | 2023-07-25 | Asm Ip 控股有限公司 | 热原子层蚀刻工艺 |
| US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| US10607850B2 (en) * | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
| CN110546742B (zh) | 2017-04-06 | 2023-09-29 | 关东电化工业株式会社 | 干式蚀刻气体组合物及干式蚀刻方法 |
| JP6896522B2 (ja) | 2017-06-27 | 2021-06-30 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | エッチング方法およびプラズマエッチング用材料 |
| US11075084B2 (en) * | 2017-08-31 | 2021-07-27 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Chemistries for etching multi-stacked layers |
| US10410878B2 (en) * | 2017-10-31 | 2019-09-10 | American Air Liquide, Inc. | Hydrofluorocarbons containing —NH2 functional group for 3D NAND and DRAM applications |
| CN111066129B (zh) * | 2018-06-04 | 2024-04-05 | 东京毅力科创株式会社 | 蚀刻处理方法和蚀刻处理装置 |
| JP7030648B2 (ja) * | 2018-08-09 | 2022-03-07 | キオクシア株式会社 | 半導体装置の製造方法およびエッチングガス |
| JP7173799B2 (ja) * | 2018-09-11 | 2022-11-16 | キオクシア株式会社 | 半導体装置の製造方法およびエッチングガス |
| JP6666601B2 (ja) * | 2018-11-22 | 2020-03-18 | 東京エレクトロン株式会社 | 多孔質膜をエッチングする方法 |
| JP6874778B2 (ja) * | 2019-01-09 | 2021-05-19 | ダイキン工業株式会社 | シクロブタンの製造方法 |
| KR102729448B1 (ko) * | 2019-03-27 | 2024-11-14 | 다이킨 고교 가부시키가이샤 | 할로겐화 시클로알칸 화합물의 제조 방법 |
| EP3987553B8 (en) | 2019-06-21 | 2023-12-06 | Hitachi Energy Ltd | Dielectric-insulation or arc-extinction fluid |
| US11688650B2 (en) * | 2019-07-05 | 2023-06-27 | Tokyo Electron Limited | Etching method and substrate processing apparatus |
| JP7493378B2 (ja) * | 2019-07-05 | 2024-05-31 | 東京エレクトロン株式会社 | エッチング処理方法及び基板処理装置 |
| JP7737789B2 (ja) | 2019-07-18 | 2025-09-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 半導体処理システム用シャワーヘッドデバイス |
| US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
| CN113035706A (zh) * | 2019-12-25 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | 一种等离子体刻蚀方法和刻蚀装置 |
| KR102461689B1 (ko) * | 2020-05-04 | 2022-10-31 | 아주대학교산학협력단 | 펜타플루오로프로판올(pentafluoropropanol)을 이용한 플라즈마 식각 방법 |
| KR102244862B1 (ko) * | 2020-08-04 | 2021-04-27 | (주)원익머트리얼즈 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법 |
| CN116325089A (zh) * | 2020-10-15 | 2023-06-23 | 株式会社力森诺科 | 蚀刻气体、蚀刻方法以及半导体元件的制造方法 |
| JPWO2022080275A1 (enExample) * | 2020-10-15 | 2022-04-21 | ||
| EP4231333A4 (en) * | 2020-10-15 | 2024-11-13 | Resonac Corporation | ETCHING GAS, METHOD FOR PRODUCING SAME, ETCHING METHOD AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT |
| EP4230608A4 (en) * | 2020-10-15 | 2024-11-27 | Resonac Corporation | PROCESS FOR STORING FLUORO-2-BUTENE |
| WO2022080276A1 (ja) * | 2020-10-15 | 2022-04-21 | 昭和電工株式会社 | フルオロ－２－ブテンの保管方法 |
| JPWO2022080270A1 (enExample) * | 2020-10-15 | 2022-04-21 | ||
| IL302116A (en) | 2020-10-15 | 2023-06-01 | Resonac Corp | Etching gas, method for manufacturing the same, etching method and method for manufacturing a semiconductor element |
| US20240018075A1 (en) * | 2020-10-15 | 2024-01-18 | Resonac Corporation | Method for storing fluorobutene |
| EP4231331A4 (en) * | 2020-10-15 | 2024-11-06 | Resonac Corporation | ETCHING GAS, ETCHING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| JPWO2022080273A1 (enExample) * | 2020-10-15 | 2022-04-21 | ||
| US12106971B2 (en) * | 2020-12-28 | 2024-10-01 | American Air Liquide, Inc. | High conductive passivation layers and method of forming the same during high aspect ratio plasma etching |
| KR102244885B1 (ko) * | 2021-02-03 | 2021-04-27 | (주)원익머트리얼즈 | 높은 선택비를 갖는 식각 가스 조성물과 이를 이용한 반도체 메모리 소자의 제조 공정 |
| KR20220133019A (ko) | 2021-03-24 | 2022-10-04 | 삼성전자주식회사 | 식각 가스 조성물, 이를 이용한 미세 패턴 형성 방법 및 수직형 반도체 장치의 제조 방법 |
| CN115483092A (zh) * | 2021-06-15 | 2022-12-16 | 芯恩（青岛）集成电路有限公司 | 一种半导体结构中的沟槽顶角的圆化方法及半导体结构 |
| US12224177B2 (en) | 2022-02-08 | 2025-02-11 | American Air Liquide, Inc. | Method of running an etch process in higher selectivity to mask and polymer regime by using a cyclic etch process |
| KR20230121424A (ko) | 2022-02-11 | 2023-08-18 | 삼성전자주식회사 | 반도체 소자 |
| CN114566431A (zh) * | 2022-02-21 | 2022-05-31 | 中船(邯郸)派瑞特种气体股份有限公司 | 一种低损伤刻蚀多孔有机硅酸盐材料的方法 |
| CN119895076A (zh) * | 2022-07-22 | 2025-04-25 | 应用材料公司 | 沉积硅基介电膜的方法 |
| KR102595941B1 (ko) * | 2022-09-20 | 2023-10-27 | 성균관대학교산학협력단 | 플라즈마 식각 방법 및 플라즈마 식각 장치 |
| US20240096640A1 (en) * | 2022-09-20 | 2024-03-21 | Tokyo Electron Limited | High Aspect Ratio Contact (HARC) Etch |
| US20250079183A1 (en) | 2023-08-28 | 2025-03-06 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Cryogenic plasma etching using c2h2f2 |
| US20250079179A1 (en) * | 2023-09-03 | 2025-03-06 | Nanya Technology Corporation | Manufacturing method of semiconductor device |
Family Cites Families (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4711698A (en) * | 1985-07-15 | 1987-12-08 | Texas Instruments Incorporated | Silicon oxide thin film etching process |
| JP2570726B2 (ja) * | 1987-03-05 | 1997-01-16 | ミノルタ株式会社 | 摩擦帯電部材 |
| JP3253215B2 (ja) * | 1993-03-31 | 2002-02-04 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| JPH06329826A (ja) * | 1993-05-17 | 1994-11-29 | Daikin Ind Ltd | フルオロシクロブタン化合物からなる発泡剤 |
| US5935877A (en) | 1995-09-01 | 1999-08-10 | Applied Materials, Inc. | Etch process for forming contacts over titanium silicide |
| DE69736839T2 (de) * | 1996-10-30 | 2007-02-08 | Japan As Represented By Director General Of Agency Of Industrial Science And Technology | Verfahren zum trochenätzen und gasgemisch dafür |
| US6051504A (en) | 1997-08-15 | 2000-04-18 | International Business Machines Corporation | Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma |
| US6183655B1 (en) * | 1997-09-19 | 2001-02-06 | Applied Materials, Inc. | Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon |
| US6228775B1 (en) * | 1998-02-24 | 2001-05-08 | Micron Technology, Inc. | Plasma etching method using low ionization potential gas |
| US6387287B1 (en) | 1998-03-27 | 2002-05-14 | Applied Materials, Inc. | Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window |
| US6412984B2 (en) * | 1998-05-14 | 2002-07-02 | Nsk Ltd. | Dynamic pressure bearing apparatus |
| US6451703B1 (en) | 2000-03-10 | 2002-09-17 | Applied Materials, Inc. | Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas |
| JP4432230B2 (ja) * | 2000-07-27 | 2010-03-17 | 日本ゼオン株式会社 | フッ素化炭化水素の精製方法、溶剤、潤滑性重合体含有液および潤滑性重合体膜を有する物品 |
| US6569774B1 (en) | 2000-08-31 | 2003-05-27 | Micron Technology, Inc. | Method to eliminate striations and surface roughness caused by dry etch |
| US6897532B1 (en) | 2002-04-15 | 2005-05-24 | Cypress Semiconductor Corp. | Magnetic tunneling junction configuration and a method for making the same |
| US6972265B1 (en) | 2002-04-15 | 2005-12-06 | Silicon Magnetic Systems | Metal etch process selective to metallic insulating materials |
| US20050014383A1 (en) | 2003-07-15 | 2005-01-20 | Bing Ji | Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas |
| US6972258B2 (en) | 2003-08-04 | 2005-12-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for selectively controlling damascene CD bias |
| JP4629421B2 (ja) * | 2004-12-06 | 2011-02-09 | パナソニック株式会社 | ドライエッチング方法及びドライエッチング装置 |
| US9175201B2 (en) | 2004-12-21 | 2015-11-03 | Honeywell International Inc. | Stabilized iodocarbon compositions |
| AU2005318958B2 (en) | 2004-12-21 | 2011-11-17 | Honeywell International Inc. | Stabilized iodocarbon compositions |
| JP4691702B2 (ja) * | 2005-02-16 | 2011-06-01 | 独立行政法人産業技術総合研究所 | トランス−１，１，２，２，３，４−ヘキサフルオロシクロブタンの製造方法 |
| US20060243944A1 (en) | 2005-03-04 | 2006-11-02 | Minor Barbara H | Compositions comprising a fluoroolefin |
| JP5131436B2 (ja) * | 2007-05-31 | 2013-01-30 | 日本ゼオン株式会社 | エッチング方法 |
| BR122018074416B1 (pt) | 2007-06-12 | 2019-03-19 | E. I. Du Pont De Nemours And Company | Composição e processo para produzir refrigeração |
| WO2009019219A2 (en) | 2007-08-03 | 2009-02-12 | Solvay (Société Anonyme) | Methods of using a solvent or a foam blowing agent |
| KR101442308B1 (ko) * | 2007-09-28 | 2014-09-22 | 제온 코포레이션 | 플라즈마 에칭 방법 |
| JP2009093869A (ja) * | 2007-10-05 | 2009-04-30 | Sunarrow Ltd | キーシートおよびその製造方法 |
| US8614151B2 (en) | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
| EP2399892A3 (en) | 2008-03-19 | 2012-06-13 | E.I. Du Pont De Nemours And Company | Process for making 1,1,1,4,4,4-hexafluoro-2-butene |
| JP5266902B2 (ja) * | 2008-06-20 | 2013-08-21 | 日本ゼオン株式会社 | 含フッ素オレフィン化合物の製造方法 |
| US8440048B2 (en) * | 2009-01-28 | 2013-05-14 | Asm America, Inc. | Load lock having secondary isolation chamber |
| CN102341444A (zh) * | 2009-03-06 | 2012-02-01 | 苏威氟有限公司 | 不饱和氢氟烃的用途 |
| JP2011060958A (ja) * | 2009-09-09 | 2011-03-24 | Toshiba Corp | 半導体装置及びその製造方法 |
| WO2011062067A1 (en) * | 2009-11-20 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN102668063B (zh) | 2009-11-20 | 2015-02-18 | 株式会社半导体能源研究所 | 半导体装置 |
| US20110144216A1 (en) | 2009-12-16 | 2011-06-16 | Honeywell International Inc. | Compositions and uses of cis-1,1,1,4,4,4-hexafluoro-2-butene |
| KR101660488B1 (ko) | 2010-01-22 | 2016-09-28 | 삼성전자주식회사 | 3차원 반도체 장치 및 그 제조 방법 |
| US8435901B2 (en) * | 2010-06-11 | 2013-05-07 | Tokyo Electron Limited | Method of selectively etching an insulation stack for a metal interconnect |
| TWI523900B (zh) | 2010-07-20 | 2016-03-01 | 首威索勒希斯股份有限公司 | 氟彈性體組合物 |
| RU2010147004A (ru) | 2010-11-17 | 2012-05-27 | Е.И.Дюпон де Немур энд Компани (US) | Каталитический синтез внутренних фторбутенов и внутренних фторпентенов |
| JP2012174961A (ja) * | 2011-02-23 | 2012-09-10 | Toshiba Corp | 半導体記憶装置の製造方法 |
| JP5682381B2 (ja) | 2011-03-09 | 2015-03-11 | 日本ゼオン株式会社 | 含ハロゲノフッ素化シクロアルカン、及び含水素フッ素化シクロアルカンの製造方法 |
| US20130098396A1 (en) | 2011-10-19 | 2013-04-25 | E I Du Pont De Nemours And Company | Novel 1,1,1,4,4,5,5,6,6,6-decafluorohex-2-ene isomer mixtures and uses thereof |
| US20130122712A1 (en) * | 2011-11-14 | 2013-05-16 | Jong Mun Kim | Method of etching high aspect ratio features in a dielectric layer |
| WO2013123184A1 (en) | 2012-02-17 | 2013-08-22 | E. I. Du Pont De Nemours And Company | Azeotrope-like compositions of z-1,1,1,4,4,4-hexafluoro-2-butene and e-1,1,1,4,4,4-hexafluoro-2-butene and uses thereof |
| WO2014160910A1 (en) | 2013-03-28 | 2014-10-02 | E. I. Du Pont De Nemours And Company | Hydrofluoroolefin etching gas mixtures |
| US9748366B2 (en) | 2013-10-03 | 2017-08-29 | Applied Materials, Inc. | Etching oxide-nitride stacks using C4F6H2 |
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- 2013-10-30 KR KR1020157029992A patent/KR102048959B1/ko active Active
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