JP2001135824A5 - - Google Patents

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Publication number
JP2001135824A5
JP2001135824A5 JP1999316129A JP31612999A JP2001135824A5 JP 2001135824 A5 JP2001135824 A5 JP 2001135824A5 JP 1999316129 A JP1999316129 A JP 1999316129A JP 31612999 A JP31612999 A JP 31612999A JP 2001135824 A5 JP2001135824 A5 JP 2001135824A5
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JP
Japan
Prior art keywords
gate electrode
layer
semiconductor layer
contact
insulating film
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JP1999316129A
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English (en)
Japanese (ja)
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JP4562835B2 (ja
JP2001135824A (ja
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Priority claimed from JP31612999A external-priority patent/JP4562835B2/ja
Priority to JP31612999A priority Critical patent/JP4562835B2/ja
Application filed filed Critical
Priority to US09/703,593 priority patent/US6521912B1/en
Publication of JP2001135824A publication Critical patent/JP2001135824A/ja
Priority to US10/337,724 priority patent/US6919282B2/en
Priority to US11/181,788 priority patent/US7166899B2/en
Priority to US11/544,593 priority patent/US7372114B2/en
Publication of JP2001135824A5 publication Critical patent/JP2001135824A5/ja
Publication of JP4562835B2 publication Critical patent/JP4562835B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP31612999A 1999-11-05 1999-11-05 半導体装置の作製方法 Expired - Fee Related JP4562835B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP31612999A JP4562835B2 (ja) 1999-11-05 1999-11-05 半導体装置の作製方法
US09/703,593 US6521912B1 (en) 1999-11-05 2000-11-02 Semiconductor device
US10/337,724 US6919282B2 (en) 1999-11-05 2003-01-08 Method of fabricating a semiconductor device
US11/181,788 US7166899B2 (en) 1999-11-05 2005-07-15 Semiconductor device, and method of fabricating the same
US11/544,593 US7372114B2 (en) 1999-11-05 2006-10-10 Semiconductor device, and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31612999A JP4562835B2 (ja) 1999-11-05 1999-11-05 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001135824A JP2001135824A (ja) 2001-05-18
JP2001135824A5 true JP2001135824A5 (enExample) 2006-12-21
JP4562835B2 JP4562835B2 (ja) 2010-10-13

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Family Applications (1)

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JP31612999A Expired - Fee Related JP4562835B2 (ja) 1999-11-05 1999-11-05 半導体装置の作製方法

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US (4) US6521912B1 (enExample)
JP (1) JP4562835B2 (enExample)

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