JP2002057344A5 - - Google Patents
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- Publication number
- JP2002057344A5 JP2002057344A5 JP2000245775A JP2000245775A JP2002057344A5 JP 2002057344 A5 JP2002057344 A5 JP 2002057344A5 JP 2000245775 A JP2000245775 A JP 2000245775A JP 2000245775 A JP2000245775 A JP 2000245775A JP 2002057344 A5 JP2002057344 A5 JP 2002057344A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor film
- amorphous semiconductor
- insulating film
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000245775A JP2002057344A (ja) | 2000-08-14 | 2000-08-14 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000245775A JP2002057344A (ja) | 2000-08-14 | 2000-08-14 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002057344A JP2002057344A (ja) | 2002-02-22 |
| JP2002057344A5 true JP2002057344A5 (enExample) | 2007-10-25 |
Family
ID=18736232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000245775A Withdrawn JP2002057344A (ja) | 2000-08-14 | 2000-08-14 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002057344A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4969024B2 (ja) * | 2003-01-21 | 2012-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4986415B2 (ja) * | 2004-06-14 | 2012-07-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7696031B2 (en) | 2004-06-14 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd | Method for manufacturing semiconductor device |
| US9349870B2 (en) | 2013-09-29 | 2016-05-24 | Boe Technology Group Co., Ltd | Method for forming low-temperature polysilicon thin film, thin film transistor and display device |
| CN103489788B (zh) * | 2013-09-29 | 2015-10-21 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜的制备方法、薄膜晶体管和显示装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61166074A (ja) * | 1985-01-17 | 1986-07-26 | Fujitsu Ltd | 絶縁ゲ−ト型トランジスタ及びその製造方法 |
| JP2831006B2 (ja) * | 1988-11-01 | 1998-12-02 | ソニー株式会社 | 薄膜トランジスタの製造方法 |
| JPH09260284A (ja) * | 1996-03-25 | 1997-10-03 | Sharp Corp | 半導体装置の製造方法 |
| JP4030193B2 (ja) * | 1998-07-16 | 2008-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2000
- 2000-08-14 JP JP2000245775A patent/JP2002057344A/ja not_active Withdrawn
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