JP2001007335A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2001007335A5 JP2001007335A5 JP1999176127A JP17612799A JP2001007335A5 JP 2001007335 A5 JP2001007335 A5 JP 2001007335A5 JP 1999176127 A JP1999176127 A JP 1999176127A JP 17612799 A JP17612799 A JP 17612799A JP 2001007335 A5 JP2001007335 A5 JP 2001007335A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- semiconductor film
- film
- insulating layer
- protective insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 description 44
- 239000010410 layer Substances 0.000 description 32
- 230000001681 protective effect Effects 0.000 description 20
- 238000000034 method Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- -1 silicon oxide nitride Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17612799A JP4307635B2 (ja) | 1999-06-22 | 1999-06-22 | 半導体装置の作製方法 |
| US09/598,827 US6358766B1 (en) | 1999-06-22 | 2000-06-21 | Method of fabricating a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17612799A JP4307635B2 (ja) | 1999-06-22 | 1999-06-22 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001007335A JP2001007335A (ja) | 2001-01-12 |
| JP2001007335A5 true JP2001007335A5 (enExample) | 2006-07-20 |
| JP4307635B2 JP4307635B2 (ja) | 2009-08-05 |
Family
ID=16008150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17612799A Expired - Fee Related JP4307635B2 (ja) | 1999-06-22 | 1999-06-22 | 半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6358766B1 (enExample) |
| JP (1) | JP4307635B2 (enExample) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6924860B2 (en) * | 1997-11-05 | 2005-08-02 | Hitachi, Ltd. | Polarized UV light irradiation method for liquid crystal display device |
| US6555455B1 (en) * | 1998-09-03 | 2003-04-29 | Micron Technology, Inc. | Methods of passivating an oxide surface subjected to a conductive material anneal |
| US7235810B1 (en) | 1998-12-03 | 2007-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP4666723B2 (ja) | 1999-07-06 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3645755B2 (ja) * | 1999-09-17 | 2005-05-11 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
| CN1217417C (zh) | 1999-12-10 | 2005-08-31 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| GB2358084B (en) * | 2000-01-07 | 2004-02-18 | Seiko Epson Corp | Semiconductor transistor |
| US7023021B2 (en) | 2000-02-22 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US6812493B2 (en) * | 2000-04-04 | 2004-11-02 | Matsushita Electric Industrial Co., Ltd. | Thin-film semiconductor element and method of producing same |
| JP4769997B2 (ja) * | 2000-04-06 | 2011-09-07 | ソニー株式会社 | 薄膜トランジスタ及びその製造方法、液晶表示装置、液晶表示装置の製造方法、有機ｅｌ装置、有機ｅｌ装置の製造方法 |
| DE20006642U1 (de) | 2000-04-11 | 2000-08-17 | Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto, Calif. | Optische Vorrichtung |
| US6789910B2 (en) | 2000-04-12 | 2004-09-14 | Semiconductor Energy Laboratory, Co., Ltd. | Illumination apparatus |
| US7525165B2 (en) | 2000-04-17 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| US7078321B2 (en) | 2000-06-19 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US6562671B2 (en) | 2000-09-22 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and manufacturing method thereof |
| JP4137454B2 (ja) * | 2001-01-17 | 2008-08-20 | 株式会社半導体エネルギー研究所 | 発光装置、電子機器及び発光装置の作製方法 |
| US6825496B2 (en) | 2001-01-17 | 2004-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP3612494B2 (ja) * | 2001-03-28 | 2005-01-19 | 株式会社日立製作所 | 表示装置 |
| US6809023B2 (en) * | 2001-04-06 | 2004-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device having uniform crystal grains in a crystalline semiconductor film |
| JP4831885B2 (ja) * | 2001-04-27 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5025057B2 (ja) * | 2001-05-10 | 2012-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4002410B2 (ja) | 2001-06-22 | 2007-10-31 | 日本電気株式会社 | アクティブマトリックス型液晶表示装置の製造方法 |
| JP4267266B2 (ja) * | 2001-07-10 | 2009-05-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2003109773A (ja) * | 2001-07-27 | 2003-04-11 | Semiconductor Energy Lab Co Ltd | 発光装置、半導体装置およびそれらの作製方法 |
| JP4024510B2 (ja) * | 2001-10-10 | 2007-12-19 | 株式会社半導体エネルギー研究所 | 記録媒体、および基材 |
| JP2003168645A (ja) * | 2001-12-03 | 2003-06-13 | Hitachi Ltd | 半導体薄膜装置、その製造方法及び画像表示装置 |
| KR100477102B1 (ko) | 2001-12-19 | 2005-03-17 | 삼성에스디아이 주식회사 | 금속유도화 측면결정화방법을 이용한 멀티플 게이트씨모스 박막 트랜지스터 및 그의 제조방법 |
| KR100477103B1 (ko) | 2001-12-19 | 2005-03-18 | 삼성에스디아이 주식회사 | 금속유도화 측면결정화방법을 이용한 멀티플 게이트 박막트랜지스터 및 그의 제조방법 |
| KR100462862B1 (ko) * | 2002-01-18 | 2004-12-17 | 삼성에스디아이 주식회사 | 티에프티용 다결정 실리콘 박막 및 이를 이용한디스플레이 디바이스 |
| US20050140283A1 (en) * | 2002-02-13 | 2005-06-30 | Lau Silvanus S. | Multilayer structure to form an active matrix display having single crystalline drivers over a transmissive substrate |
| JP4179800B2 (ja) * | 2002-05-24 | 2008-11-12 | ソニー株式会社 | 表示装置及びその製造方法 |
| KR100454751B1 (ko) | 2002-10-21 | 2004-11-03 | 삼성에스디아이 주식회사 | 듀얼 또는 멀티플 게이트를 사용하는 티에프티의 제조 방법 |
| TWI300950B (en) * | 2002-11-29 | 2008-09-11 | Adv Lcd Tech Dev Ct Co Ltd | Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same |
| US20040214011A1 (en) * | 2003-04-22 | 2004-10-28 | Shih-Chang Chang | Fabrication method and substrate structure of polysilicon thin-film transistor |
| US7001835B2 (en) * | 2003-11-21 | 2006-02-21 | International Business Machines Corporation | Crystallographic modification of hard mask properties |
| US7791047B2 (en) * | 2003-12-12 | 2010-09-07 | Semequip, Inc. | Method and apparatus for extracting ions from an ion source for use in ion implantation |
| US7339579B2 (en) * | 2003-12-15 | 2008-03-04 | 3M Innovative Properties Company | Wiring harness and touch sensor incorporating same |
| US7341628B2 (en) * | 2003-12-19 | 2008-03-11 | Melas Andreas A | Method to reduce crystal defects particularly in group III-nitride layers and substrates |
| TWI367686B (en) * | 2004-04-07 | 2012-07-01 | Semiconductor Energy Lab | Light emitting device, electronic device, and television device |
| US7235501B2 (en) | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
| US7560395B2 (en) | 2005-01-05 | 2009-07-14 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
| US7829394B2 (en) * | 2005-05-26 | 2010-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| US7410910B2 (en) | 2005-08-31 | 2008-08-12 | Micron Technology, Inc. | Lanthanum aluminum oxynitride dielectric films |
| KR101299604B1 (ko) * | 2005-10-18 | 2013-08-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| US20070126707A1 (en) * | 2005-12-02 | 2007-06-07 | Jones Terence A | Linearized touch sensor having protective coating |
| US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
| US8278739B2 (en) * | 2006-03-20 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof |
| US7935584B2 (en) * | 2006-08-31 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor device |
| US7759747B2 (en) * | 2006-08-31 | 2010-07-20 | Micron Technology, Inc. | Tantalum aluminum oxynitride high-κ dielectric |
| US7563730B2 (en) | 2006-08-31 | 2009-07-21 | Micron Technology, Inc. | Hafnium lanthanide oxynitride films |
| US20080057659A1 (en) * | 2006-08-31 | 2008-03-06 | Micron Technology, Inc. | Hafnium aluminium oxynitride high-K dielectric and metal gates |
| US7662703B2 (en) * | 2006-08-31 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor film and semiconductor device |
| US7432548B2 (en) * | 2006-08-31 | 2008-10-07 | Micron Technology, Inc. | Silicon lanthanide oxynitride films |
| US7605030B2 (en) * | 2006-08-31 | 2009-10-20 | Micron Technology, Inc. | Hafnium tantalum oxynitride high-k dielectric and metal gates |
| US7544604B2 (en) | 2006-08-31 | 2009-06-09 | Micron Technology, Inc. | Tantalum lanthanide oxynitride films |
| US7776765B2 (en) * | 2006-08-31 | 2010-08-17 | Micron Technology, Inc. | Tantalum silicon oxynitride high-k dielectrics and metal gates |
| US7972943B2 (en) * | 2007-03-02 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP5091730B2 (ja) * | 2008-03-14 | 2012-12-05 | 株式会社日立製作所 | 薄膜半導体装置を用いた画像表示装置の製造方法 |
| JP5525224B2 (ja) | 2008-09-30 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
| TWI555205B (zh) * | 2010-11-05 | 2016-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| KR20130089044A (ko) * | 2012-02-01 | 2013-08-09 | 삼성디스플레이 주식회사 | 반도체 장치 및 그를 구비하는 평판표시장치 |
| JP6128906B2 (ja) * | 2012-04-13 | 2017-05-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2566583B1 (fr) * | 1984-06-22 | 1986-09-19 | Thomson Csf | Procede de fabrication d'au moins un transistor a effet de champ en couche mince, et transistor obtenu par ce procede |
| US5266825A (en) * | 1989-10-18 | 1993-11-30 | Hitachi, Ltd. | Thin-film device |
| US5153690A (en) * | 1989-10-18 | 1992-10-06 | Hitachi, Ltd. | Thin-film device |
| EP0456199B1 (en) * | 1990-05-11 | 1997-08-27 | Asahi Glass Company Ltd. | Process for preparing a polycrystalline semiconductor thin film transistor |
| US6150692A (en) * | 1993-07-13 | 2000-11-21 | Sony Corporation | Thin film semiconductor device for active matrix panel |
| US5923962A (en) | 1993-10-29 | 1999-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| TW264575B (enExample) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
| JP3431033B2 (ja) | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
| US5956581A (en) * | 1995-04-20 | 1999-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| JP3522441B2 (ja) * | 1996-03-12 | 2004-04-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US5981934A (en) * | 1996-09-12 | 1999-11-09 | Canon Kabushiki Kaisha | Photovoltaic element having a transparent conductive layer with specified fractal dimension and fractal property |
| US5814530A (en) * | 1996-09-27 | 1998-09-29 | Xerox Corporation | Producing a sensor with doped microcrystalline silicon channel leads |
| US5959312A (en) * | 1996-09-27 | 1999-09-28 | Xerox Corporation | Sensor with doped microcrystalline silicon channel leads with bubble formation protection means |
| US6048672A (en) * | 1998-02-20 | 2000-04-11 | Shipley Company, L.L.C. | Photoresist compositions and methods and articles of manufacture comprising same |
| JP2001076127A (ja) * | 1999-09-06 | 2001-03-23 | Fuji Photo Film Co Ltd | 画像切出し装置および方法，画像切出し装置を備えた画像入出力システム，ならびに画像切出し装置のためのプログラムを記録した記録媒体 |
-
1999
- 1999-06-22 JP JP17612799A patent/JP4307635B2/ja not_active Expired - Fee Related
-
2000
- 2000-06-21 US US09/598,827 patent/US6358766B1/en not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2001007335A5 (enExample) | ||
| US7619253B2 (en) | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same | |
| US8809133B2 (en) | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same | |
| JPH09312403A5 (enExample) | ||
| JPH09312402A5 (enExample) | ||
| JP2001007335A (ja) | 半導体装置の作製方法 | |
| KR970063787A (ko) | 반도체 박막과 이의 제조 방법 및 반도체 장치와 이를 제조하는 방법 | |
| US9786500B2 (en) | Polycrystalline semiconductor layer and fabricating method thereof | |
| TW200810131A (en) | System for displaying images and fabrication method thereof | |
| US7282398B2 (en) | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same | |
| US7071083B2 (en) | Method of fabricating polysilicon film by excimer laser crystallization process | |
| TWI271866B (en) | Thin film transistor and process thereof | |
| JPH02130912A (ja) | 薄膜半導体装置 | |
| JPH02295111A (ja) | 薄膜結晶層を有する半導体装置の製造方法 | |
| JP2002057344A5 (enExample) | ||
| JP2000243974A5 (enExample) | ||
| JPH11186563A5 (enExample) | ||
| JPH09289165A5 (enExample) | ||
| JP2004022900A5 (enExample) | ||
| JP4493749B2 (ja) | 半導体装置の作製方法 | |
| JP4907096B2 (ja) | トランジスタの作製方法 | |
| JP4493751B2 (ja) | 半導体装置の作製方法 | |
| JP2805830B2 (ja) | 半導体装置の製造方法 | |
| JP4646531B2 (ja) | 薄膜トランジスタ及びその作製方法、並びに前記薄膜トランジスタを用いた電子機器 | |
| JPH09312259A5 (enExample) |