JPH11186563A5 - - Google Patents

Info

Publication number
JPH11186563A5
JPH11186563A5 JP1998156719A JP15671998A JPH11186563A5 JP H11186563 A5 JPH11186563 A5 JP H11186563A5 JP 1998156719 A JP1998156719 A JP 1998156719A JP 15671998 A JP15671998 A JP 15671998A JP H11186563 A5 JPH11186563 A5 JP H11186563A5
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
silicon oxynitride
glass substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998156719A
Other languages
English (en)
Japanese (ja)
Other versions
JP4115589B2 (ja
JPH11186563A (ja
Filing date
Publication date
Priority claimed from JP15671998A external-priority patent/JP4115589B2/ja
Priority to JP15671998A priority Critical patent/JP4115589B2/ja
Application filed filed Critical
Priority to TW087117206A priority patent/TW408351B/zh
Priority to US09/173,567 priority patent/US6605497B2/en
Priority to KR10-1998-0043423A priority patent/KR100517394B1/ko
Publication of JPH11186563A publication Critical patent/JPH11186563A/ja
Priority to US10/422,778 priority patent/US6890805B2/en
Priority to US11/118,444 priority patent/US20050189592A1/en
Publication of JPH11186563A5 publication Critical patent/JPH11186563A5/ja
Publication of JP4115589B2 publication Critical patent/JP4115589B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP15671998A 1997-10-17 1998-05-21 半導体装置の作製方法 Expired - Fee Related JP4115589B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP15671998A JP4115589B2 (ja) 1997-10-17 1998-05-21 半導体装置の作製方法
TW087117206A TW408351B (en) 1997-10-17 1998-10-15 Semiconductor device and method of manufacturing the same
US09/173,567 US6605497B2 (en) 1997-10-17 1998-10-16 Method of manufacturing semiconductor device over glass substrate having heat resistance
KR10-1998-0043423A KR100517394B1 (ko) 1997-10-17 1998-10-17 반도체장치및그제조방법
US10/422,778 US6890805B2 (en) 1997-10-17 2003-04-25 Method of manufacturing semiconductor device including thin film transistor over thermal oxidation film over a glass substrate having distortion point of not lower than 750° C
US11/118,444 US20050189592A1 (en) 1997-10-17 2005-05-02 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP30352697 1997-10-17
JP9-303526 1997-10-17
JP15671998A JP4115589B2 (ja) 1997-10-17 1998-05-21 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH11186563A JPH11186563A (ja) 1999-07-09
JPH11186563A5 true JPH11186563A5 (enExample) 2005-06-30
JP4115589B2 JP4115589B2 (ja) 2008-07-09

Family

ID=26484402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15671998A Expired - Fee Related JP4115589B2 (ja) 1997-10-17 1998-05-21 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4115589B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208771A (ja) 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
JP4896286B2 (ja) * 2000-01-07 2012-03-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI263336B (en) * 2000-06-12 2006-10-01 Semiconductor Energy Lab Thin film transistors and semiconductor device
JP4674937B2 (ja) * 2000-08-02 2011-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5432480B2 (ja) * 2008-07-02 2014-03-05 ルネサスエレクトロニクス株式会社 Ｓｉ基板上のＧａＮ系デバイスの熱処理方法
JP5436101B2 (ja) * 2008-09-05 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法

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