JPH11204435A5 - - Google Patents

Info

Publication number
JPH11204435A5
JPH11204435A5 JP1998018098A JP1809898A JPH11204435A5 JP H11204435 A5 JPH11204435 A5 JP H11204435A5 JP 1998018098 A JP1998018098 A JP 1998018098A JP 1809898 A JP1809898 A JP 1809898A JP H11204435 A5 JPH11204435 A5 JP H11204435A5
Authority
JP
Japan
Prior art keywords
silicon film
amorphous silicon
semiconductor device
crystalline silicon
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998018098A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11204435A (ja
JP4376979B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP01809898A priority Critical patent/JP4376979B2/ja
Priority claimed from JP01809898A external-priority patent/JP4376979B2/ja
Priority to US09/227,577 priority patent/US6693044B1/en
Publication of JPH11204435A publication Critical patent/JPH11204435A/ja
Publication of JPH11204435A5 publication Critical patent/JPH11204435A5/ja
Application granted granted Critical
Publication of JP4376979B2 publication Critical patent/JP4376979B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP01809898A 1998-01-12 1998-01-12 半導体装置の作製方法 Expired - Fee Related JP4376979B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP01809898A JP4376979B2 (ja) 1998-01-12 1998-01-12 半導体装置の作製方法
US09/227,577 US6693044B1 (en) 1998-01-12 1999-01-08 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01809898A JP4376979B2 (ja) 1998-01-12 1998-01-12 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH11204435A JPH11204435A (ja) 1999-07-30
JPH11204435A5 true JPH11204435A5 (enExample) 2005-08-04
JP4376979B2 JP4376979B2 (ja) 2009-12-02

Family

ID=11962164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01809898A Expired - Fee Related JP4376979B2 (ja) 1998-01-12 1998-01-12 半導体装置の作製方法

Country Status (2)

Country Link
US (1) US6693044B1 (enExample)
JP (1) JP4376979B2 (enExample)

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JP4376979B2 (ja) 1998-01-12 2009-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
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US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
JP5515276B2 (ja) * 2008-10-31 2014-06-11 大日本印刷株式会社 半導体装置の製造方法及び半導体装置
KR101049806B1 (ko) 2008-12-30 2011-07-15 삼성모바일디스플레이주식회사 다결정 실리콘의 제조방법, 박막트랜지스터, 그의 제조방법및 이를 포함하는 유기전계발광표시장치
KR101049805B1 (ko) 2008-12-30 2011-07-15 삼성모바일디스플레이주식회사 다결정 실리콘의 제조방법, 박막트랜지스터, 그의 제조방법및 이를 포함하는 유기전계발광표시장치
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
US20120256185A1 (en) * 2009-12-21 2012-10-11 Sharp Kabushiki Kaisha Semiconductor device and process for production thereof, and display device
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
KR101041147B1 (ko) 2010-04-07 2011-06-13 삼성모바일디스플레이주식회사 박막 트랜지스터, 박막 트랜지스터의 액티브층의 제조 방법 및 표시 장치
US8629438B2 (en) * 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11791159B2 (en) * 2019-01-17 2023-10-17 Ramesh kumar Harjivan Kakkad Method of fabricating thin, crystalline silicon film and thin film transistors
KR20210085377A (ko) * 2019-12-30 2021-07-08 엘지디스플레이 주식회사 표시 장치
KR20220033596A (ko) * 2020-09-08 2022-03-17 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 표시 장치 및 이의 제조 방법
JP7616771B2 (ja) * 2021-04-06 2025-01-17 東京エレクトロン株式会社 アモルファスシリコン膜の結晶化方法

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