JP4376979B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4376979B2
JP4376979B2 JP01809898A JP1809898A JP4376979B2 JP 4376979 B2 JP4376979 B2 JP 4376979B2 JP 01809898 A JP01809898 A JP 01809898A JP 1809898 A JP1809898 A JP 1809898A JP 4376979 B2 JP4376979 B2 JP 4376979B2
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silicon film
crystalline silicon
film
amorphous silicon
region
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JP01809898A
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Japanese (ja)
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JPH11204435A5 (enExample
JPH11204435A (ja
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舜平 山崎
昌彦 早川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP01809898A priority Critical patent/JP4376979B2/ja
Priority to US09/227,577 priority patent/US6693044B1/en
Publication of JPH11204435A publication Critical patent/JPH11204435A/ja
Publication of JPH11204435A5 publication Critical patent/JPH11204435A5/ja
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  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
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  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP01809898A 1998-01-12 1998-01-12 半導体装置の作製方法 Expired - Fee Related JP4376979B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP01809898A JP4376979B2 (ja) 1998-01-12 1998-01-12 半導体装置の作製方法
US09/227,577 US6693044B1 (en) 1998-01-12 1999-01-08 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01809898A JP4376979B2 (ja) 1998-01-12 1998-01-12 半導体装置の作製方法

Publications (3)

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JPH11204435A JPH11204435A (ja) 1999-07-30
JPH11204435A5 JPH11204435A5 (enExample) 2005-08-04
JP4376979B2 true JP4376979B2 (ja) 2009-12-02

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Cited By (1)

* Cited by examiner, † Cited by third party
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US20220319846A1 (en) * 2021-04-06 2022-10-06 Tokyo Electron Limited Method of crystallizing amorphous silicon film and deposition apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4376979B2 (ja) 1998-01-12 2009-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6515648B1 (en) 1999-08-31 2003-02-04 Semiconductor Energy Laboratory Co., Ltd. Shift register circuit, driving circuit of display device, and display device using the driving circuit
US6580094B1 (en) * 1999-10-29 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Electro luminescence display device
JP2001147446A (ja) 1999-11-19 2001-05-29 Hitachi Ltd 液晶表示装置とその製造方法
US7232742B1 (en) * 1999-11-26 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film
JP2001168363A (ja) * 1999-12-10 2001-06-22 Toyota Central Res & Dev Lab Inc 太陽電池の製造方法
US6821827B2 (en) * 1999-12-28 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7503975B2 (en) 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
JP2002246310A (ja) * 2001-02-14 2002-08-30 Sony Corp 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
JP5072147B2 (ja) * 2001-05-24 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6897477B2 (en) 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
JP4267266B2 (ja) * 2001-07-10 2009-05-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI282126B (en) * 2001-08-30 2007-06-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
US7238557B2 (en) 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP3626734B2 (ja) * 2002-03-11 2005-03-09 日本電気株式会社 薄膜半導体装置
KR100475077B1 (ko) * 2002-05-31 2005-03-10 삼성전자주식회사 캐패시터의 유전막 형성방법
US6882010B2 (en) * 2002-10-03 2005-04-19 Micron Technology, Inc. High performance three-dimensional TFT-based CMOS inverters, and computer systems utilizing such novel CMOS inverters
JP4928045B2 (ja) * 2002-10-31 2012-05-09 大日本印刷株式会社 相変化型メモリ素子およびその製造方法
US7374976B2 (en) * 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
JP2005228819A (ja) * 2004-02-10 2005-08-25 Mitsubishi Electric Corp 半導体装置
US7618898B2 (en) * 2004-03-31 2009-11-17 Nec Corporation Method and apparatus for forming contact hole
TWI256515B (en) * 2004-04-06 2006-06-11 Quanta Display Inc Structure of LTPS-TFT and fabricating method thereof
US7291522B2 (en) * 2004-10-28 2007-11-06 Hewlett-Packard Development Company, L.P. Semiconductor devices and methods of making
JP4272142B2 (ja) * 2004-12-07 2009-06-03 株式会社ルネサステクノロジ スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール
US7897971B2 (en) * 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2009070861A (ja) * 2007-09-11 2009-04-02 Hitachi Displays Ltd 表示装置
KR100957780B1 (ko) 2007-12-17 2010-05-13 한국전자통신연구원 투명 전자 소자 및 그 제조 방법
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
JP5515276B2 (ja) * 2008-10-31 2014-06-11 大日本印刷株式会社 半導体装置の製造方法及び半導体装置
KR101049806B1 (ko) * 2008-12-30 2011-07-15 삼성모바일디스플레이주식회사 다결정 실리콘의 제조방법, 박막트랜지스터, 그의 제조방법및 이를 포함하는 유기전계발광표시장치
KR101049805B1 (ko) 2008-12-30 2011-07-15 삼성모바일디스플레이주식회사 다결정 실리콘의 제조방법, 박막트랜지스터, 그의 제조방법및 이를 포함하는 유기전계발광표시장치
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
WO2011078005A1 (ja) * 2009-12-21 2011-06-30 シャープ株式会社 半導体装置およびその製造方法ならびに表示装置
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
KR101041147B1 (ko) 2010-04-07 2011-06-13 삼성모바일디스플레이주식회사 박막 트랜지스터, 박막 트랜지스터의 액티브층의 제조 방법 및 표시 장치
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US11791159B2 (en) * 2019-01-17 2023-10-17 Ramesh kumar Harjivan Kakkad Method of fabricating thin, crystalline silicon film and thin film transistors
KR20210085377A (ko) * 2019-12-30 2021-07-08 엘지디스플레이 주식회사 표시 장치
KR20220033596A (ko) * 2020-09-08 2022-03-17 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 표시 장치 및 이의 제조 방법

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3347997C2 (enExample) 1982-01-06 1991-01-24 Canon K.K., Tokio/Tokyo, Jp
US4871920A (en) 1988-04-18 1989-10-03 General Electric Company High power wide band amplifier using optical techniques and impedance matching to source and load
JPH02222546A (ja) 1989-02-23 1990-09-05 Nec Corp Ｍｏｓ型電界効果トランジスタの製造方法
JPH0824146B2 (ja) 1989-10-19 1996-03-06 株式会社東芝 Ｍｏｓ型集積回路
US5147826A (en) 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
US5578520A (en) 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
TW226478B (en) 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
US5639698A (en) 1993-02-15 1997-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
US5275851A (en) 1993-03-03 1994-01-04 The Penn State Research Foundation Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
TW278219B (enExample) 1993-03-12 1996-06-11 Handotai Energy Kenkyusho Kk
JP2762215B2 (ja) 1993-08-12 1998-06-04 株式会社半導体エネルギー研究所 薄膜トランジスタおよび半導体装置の作製方法
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
TW264575B (enExample) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US5923962A (en) 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP2759415B2 (ja) 1993-11-05 1998-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW299897U (en) * 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
JP2873669B2 (ja) 1993-12-24 1999-03-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3221473B2 (ja) * 1994-02-03 2001-10-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5401982A (en) 1994-03-03 1995-03-28 Xerox Corporation Reducing leakage current in a thin-film transistor with charge carrier densities that vary in two dimensions
JP3192546B2 (ja) * 1994-04-15 2001-07-30 シャープ株式会社 半導体装置およびその製造方法
JP3540012B2 (ja) * 1994-06-07 2004-07-07 株式会社半導体エネルギー研究所 半導体装置作製方法
TW345705B (en) 1994-07-28 1998-11-21 Handotai Energy Kenkyusho Kk Laser processing method
JP3464287B2 (ja) 1994-09-05 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2616741B2 (ja) 1995-04-27 1997-06-04 日本電気株式会社 多結晶シリコン−ゲルマニウム薄膜トランジスタの製造方法
JPH09321305A (ja) 1996-05-24 1997-12-12 Sharp Corp 薄膜トランジスタ及びそれを用いた液晶表示装置
JP3645377B2 (ja) 1996-10-24 2005-05-11 株式会社半導体エネルギー研究所 集積回路の作製方法
JP3032801B2 (ja) 1997-03-03 2000-04-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW379360B (en) 1997-03-03 2000-01-11 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US6066547A (en) 1997-06-20 2000-05-23 Sharp Laboratories Of America, Inc. Thin-film transistor polycrystalline film formation by nickel induced, rapid thermal annealing method
US5998804A (en) * 1997-07-03 1999-12-07 Hna Holdings, Inc. Transistors incorporating substrates comprising liquid crystal polymers
JP4376979B2 (ja) 1998-01-12 2009-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6388270B1 (en) 1998-03-27 2002-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for producing same
US6482684B1 (en) 1998-03-27 2002-11-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a TFT with Ge seeded amorphous Si layer
JP2000114172A (ja) 1998-08-07 2000-04-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7503975B2 (en) 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
JP4267266B2 (ja) 2001-07-10 2009-05-27 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220319846A1 (en) * 2021-04-06 2022-10-06 Tokyo Electron Limited Method of crystallizing amorphous silicon film and deposition apparatus
US12112947B2 (en) * 2021-04-06 2024-10-08 Tokyo Electron Limited Method of crystallizing amorphous silicon film and deposition apparatus

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