JPH09312402A5 - - Google Patents

Info

Publication number
JPH09312402A5
JPH09312402A5 JP1996324644A JP32464496A JPH09312402A5 JP H09312402 A5 JPH09312402 A5 JP H09312402A5 JP 1996324644 A JP1996324644 A JP 1996324644A JP 32464496 A JP32464496 A JP 32464496A JP H09312402 A5 JPH09312402 A5 JP H09312402A5
Authority
JP
Japan
Prior art keywords
semiconductor device
silicon film
crystalline silicon
film
crystallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996324644A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09312402A (ja
JP3645378B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP32464496A external-priority patent/JP3645378B2/ja
Priority to JP32464496A priority Critical patent/JP3645378B2/ja
Priority to TW085116284A priority patent/TW334579B/zh
Priority to US08/785,488 priority patent/US6744069B1/en
Priority to KR1019970001219A priority patent/KR100436097B1/ko
Priority to CN97102281XA priority patent/CN1218403C/zh
Publication of JPH09312402A publication Critical patent/JPH09312402A/ja
Priority to US10/857,356 priority patent/US7173282B2/en
Publication of JPH09312402A5 publication Critical patent/JPH09312402A5/ja
Publication of JP3645378B2 publication Critical patent/JP3645378B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP32464496A 1996-01-19 1996-11-19 半導体装置の作製方法 Expired - Fee Related JP3645378B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP32464496A JP3645378B2 (ja) 1996-01-19 1996-11-19 半導体装置の作製方法
TW085116284A TW334579B (en) 1996-02-20 1996-12-30 Semiconductor device and manufacture the same
US08/785,488 US6744069B1 (en) 1996-01-19 1997-01-17 Semiconductor device and its manufacturing method
KR1019970001219A KR100436097B1 (ko) 1996-01-19 1997-01-17 반도체장치및그제작방법
CN97102281XA CN1218403C (zh) 1996-01-19 1997-01-20 半导体装置
US10/857,356 US7173282B2 (en) 1996-01-19 2004-06-01 Semiconductor device having a crystalline semiconductor film

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
JP2621096 1996-01-19
JP2603796 1996-01-20
JP3287596 1996-01-26
JP3287496 1996-01-26
JP8-32875 1996-01-26
JP8-32874 1996-01-26
JP3298196 1996-01-27
JP5833496 1996-02-20
JP8875996 1996-03-17
JP8-58334 1996-03-17
JP8-88759 1996-03-17
JP8-32981 1996-03-17
JP8-26037 1996-03-17
JP8-26210 1996-03-17
JP32464496A JP3645378B2 (ja) 1996-01-19 1996-11-19 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH09312402A JPH09312402A (ja) 1997-12-02
JPH09312402A5 true JPH09312402A5 (enExample) 2004-11-11
JP3645378B2 JP3645378B2 (ja) 2005-05-11

Family

ID=27572019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32464496A Expired - Fee Related JP3645378B2 (ja) 1996-01-19 1996-11-19 半導体装置の作製方法

Country Status (4)

Country Link
US (2) US6744069B1 (enExample)
JP (1) JP3645378B2 (enExample)
KR (1) KR100436097B1 (enExample)
CN (1) CN1218403C (enExample)

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JP2004054168A (ja) * 2002-07-24 2004-02-19 Hitachi Ltd 画像表示装置
TWI378307B (en) 2002-08-19 2012-12-01 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
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WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
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WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
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US7683429B2 (en) * 2005-05-31 2010-03-23 Semiconductor Energy Laboratory Co., Ltd. Microstructure and manufacturing method of the same
US7642612B2 (en) * 2005-06-17 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100721956B1 (ko) * 2005-12-13 2007-05-25 삼성에스디아이 주식회사 다결정 실리콘층, 상기 다결정 실리콘층을 이용한 평판표시 장치 및 이들을 제조하는 방법
KR100721957B1 (ko) * 2005-12-13 2007-05-25 삼성에스디아이 주식회사 다결정 실리콘층, 상기 다결정 실리콘층을 이용한 평판표시 장치 및 이들을 제조하는 방법
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CN102576734B (zh) 2009-10-21 2015-04-22 株式会社半导体能源研究所 显示装置和包括显示装置的电子设备
KR101716311B1 (ko) 2009-12-24 2017-03-14 닛산 가가쿠 고교 가부시키 가이샤 이종원소 간 결합을 포함하는 화합물의 제조방법
CN101819999A (zh) * 2010-05-17 2010-09-01 广东中显科技有限公司 一种用于横向诱导晶化低温多晶硅薄膜的多层膜结构
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TWI658516B (zh) 2011-03-11 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
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JP2013149953A (ja) 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
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