JP3645378B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3645378B2
JP3645378B2 JP32464496A JP32464496A JP3645378B2 JP 3645378 B2 JP3645378 B2 JP 3645378B2 JP 32464496 A JP32464496 A JP 32464496A JP 32464496 A JP32464496 A JP 32464496A JP 3645378 B2 JP3645378 B2 JP 3645378B2
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Japan
Prior art keywords
film
oxide film
silicon film
region
thermal oxide
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Expired - Fee Related
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JP32464496A
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English (en)
Japanese (ja)
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JPH09312402A (ja
JPH09312402A5 (enExample
Inventor
久 大谷
舜平 山崎
聡 寺本
潤 小山
靖 尾形
昌彦 早川
光明 納
敏次 浜谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP32464496A priority Critical patent/JP3645378B2/ja
Priority to TW085116284A priority patent/TW334579B/zh
Priority to KR1019970001219A priority patent/KR100436097B1/ko
Priority to US08/785,488 priority patent/US6744069B1/en
Priority to CN97102281XA priority patent/CN1218403C/zh
Publication of JPH09312402A publication Critical patent/JPH09312402A/ja
Priority to US10/857,356 priority patent/US7173282B2/en
Publication of JPH09312402A5 publication Critical patent/JPH09312402A5/ja
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Publication of JP3645378B2 publication Critical patent/JP3645378B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

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  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP32464496A 1996-01-19 1996-11-19 半導体装置の作製方法 Expired - Fee Related JP3645378B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP32464496A JP3645378B2 (ja) 1996-01-19 1996-11-19 半導体装置の作製方法
TW085116284A TW334579B (en) 1996-02-20 1996-12-30 Semiconductor device and manufacture the same
US08/785,488 US6744069B1 (en) 1996-01-19 1997-01-17 Semiconductor device and its manufacturing method
KR1019970001219A KR100436097B1 (ko) 1996-01-19 1997-01-17 반도체장치및그제작방법
CN97102281XA CN1218403C (zh) 1996-01-19 1997-01-20 半导体装置
US10/857,356 US7173282B2 (en) 1996-01-19 2004-06-01 Semiconductor device having a crystalline semiconductor film

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
JP2621096 1996-01-19
JP2603796 1996-01-20
JP3287596 1996-01-26
JP3287496 1996-01-26
JP8-32875 1996-01-26
JP8-32874 1996-01-26
JP3298196 1996-01-27
JP5833496 1996-02-20
JP8875996 1996-03-17
JP8-58334 1996-03-17
JP8-88759 1996-03-17
JP8-32981 1996-03-17
JP8-26037 1996-03-17
JP8-26210 1996-03-17
JP32464496A JP3645378B2 (ja) 1996-01-19 1996-11-19 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH09312402A JPH09312402A (ja) 1997-12-02
JPH09312402A5 JPH09312402A5 (enExample) 2004-11-11
JP3645378B2 true JP3645378B2 (ja) 2005-05-11

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JP32464496A Expired - Fee Related JP3645378B2 (ja) 1996-01-19 1996-11-19 半導体装置の作製方法

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US (2) US6744069B1 (enExample)
JP (1) JP3645378B2 (enExample)
KR (1) KR100436097B1 (enExample)
CN (1) CN1218403C (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
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JP3645379B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US8603870B2 (en) 1996-07-11 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
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US6462722B1 (en) * 1997-02-17 2002-10-08 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
EP1830343A3 (en) * 1997-02-17 2009-03-11 Seiko Epson Corporation Structure of a driving circuit for an electroluminescent display
TW408351B (en) * 1997-10-17 2000-10-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
US7248232B1 (en) 1998-02-25 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Information processing device
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6559036B1 (en) * 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6656779B1 (en) * 1998-10-06 2003-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof
EP1388897A1 (en) * 2001-05-18 2004-02-11 Sanyo Electric Co., Ltd. Thin film transistor and active matrix type display unit production methods therefor
TW556350B (en) * 2001-08-27 2003-10-01 Univ Columbia A method to increase device-to-device uniformity for polycrystalline thin-film transistors by deliberately mis-aligning the microstructure relative to the channel region
JP2003303770A (ja) * 2002-04-11 2003-10-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
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JP2003332350A (ja) * 2002-05-17 2003-11-21 Hitachi Ltd 薄膜半導体装置
JP2004054168A (ja) * 2002-07-24 2004-02-19 Hitachi Ltd 画像表示装置
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KR20050047103A (ko) 2002-08-19 2005-05-19 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 다양한 조사 패턴을 포함하는 원 샷 반도체 가공 시스템 및방법
TWI351713B (en) 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
TWI359441B (en) 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
KR100626007B1 (ko) * 2004-06-30 2006-09-20 삼성에스디아이 주식회사 박막 트랜지스터, 상기 박막 트랜지스터의 제조방법, 이박막 트랜지스터를 구비한 평판표시장치, 및 이평판표시장치의 제조방법
US7560789B2 (en) 2005-05-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7683429B2 (en) * 2005-05-31 2010-03-23 Semiconductor Energy Laboratory Co., Ltd. Microstructure and manufacturing method of the same
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KR100721956B1 (ko) * 2005-12-13 2007-05-25 삼성에스디아이 주식회사 다결정 실리콘층, 상기 다결정 실리콘층을 이용한 평판표시 장치 및 이들을 제조하는 방법
KR100721957B1 (ko) * 2005-12-13 2007-05-25 삼성에스디아이 주식회사 다결정 실리콘층, 상기 다결정 실리콘층을 이용한 평판표시 장치 및 이들을 제조하는 방법
JP5556072B2 (ja) * 2009-01-07 2014-07-23 ソニー株式会社 半導体装置、その製造方法、ミリ波誘電体内伝送装置
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KR101716311B1 (ko) 2009-12-24 2017-03-14 닛산 가가쿠 고교 가부시키 가이샤 이종원소 간 결합을 포함하는 화합물의 제조방법
CN101819999A (zh) * 2010-05-17 2010-09-01 广东中显科技有限公司 一种用于横向诱导晶化低温多晶硅薄膜的多层膜结构
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US6744069B1 (en) 2004-06-01
US7173282B2 (en) 2007-02-06
CN1163490A (zh) 1997-10-29
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