KR970060525A - 반도체 장치 및 그 제작 방법 - Google Patents

반도체 장치 및 그 제작 방법 Download PDF

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KR970060525A
KR970060525A KR1019970001221A KR19970001221A KR970060525A KR 970060525 A KR970060525 A KR 970060525A KR 1019970001221 A KR1019970001221 A KR 1019970001221A KR 19970001221 A KR19970001221 A KR 19970001221A KR 970060525 A KR970060525 A KR 970060525A
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South Korea
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crystalline silicon
silicon film
film
semiconductor device
metal element
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KR1019970001221A
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KR100474790B1 (ko
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순페이 야마자키
사토시 테라모토
준 코야마
야수시 오가타
마사히코 하야카와
미츠아키 오사메
히사시 오타니
토시지 하마타니
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순페이 야마자키
한도타이 에네루기 겐쿠쇼 가부시키가이샤
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Publication of KR970060525A publication Critical patent/KR970060525A/ko
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Abstract

비정질 규소막(203)의 특정의 영역(205)에 선택적으로 니켈 원소를 접촉시켜 유지시킨다. 그리고, 가열 처리를 실시하므로써 결정화시키고, 또한 할로겐 원자를 함유한 산화성 분위기중에서 가열 처리를 실시하므로써 열산화막(209)을 형성한다. 이 때, 결정성의 개선, 니켈 원소의 게터링이 진행된다. 이 결정성 규소막은 다수의 점에서 방상형으로 결정 성장하도록 한 구조를 갖는 것으로 된다. 이와 같이 하므로서, 고특성을 갖는 TFT를 얻을 수 있다.

Description

반도체 장치 및 그 제작 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 박막 트랜지스터의 제작 공정을 도시한 도면.

Claims (14)

  1. 절연 표면을 갖는 기판상에 복수의 박막 트랜지스터가 제작된 구성을 가지며, 상기 복수의 박막 트랜지스터의 활성층을 구성하는 결정성 규소막은 다수의 점에서 방사형으로 결정 성장된 결정성 규소막을 이용하여 구성되어 있는 것을 특징으로 하는 반도체 장치.
  2. 절연 표면을 갖는 기판상에 복수의 박막 트랜지스터가 제작된 구성을 가지며, 상기 복수의 박막 트랜지스터의 활성층을 구성하는 결정성 규소막은 특정의 방향으로 결정 성장된 폴이 막두께 정도 ~2000Å의 세로로긴 다수의 구조체로 이루어지며, 상기 특정의 방향은 각 박막 트랜지스터에서 서로다른 것을 특징으로 하는 반도체 장치.
  3. 제1항 또는 제2항에 있어서, 결정성 규소막중의 표면에는 열산화막이 형서되어 있으며, 상기 열산화막의 막두께는 상기 결정성 규소막의 막두께보다 두꺼운 것을 특징으로 하는 반도체 장치.
  4. 제1항 또는 제2항에 있어서, 결정성 규소막중에는 규소의 결정화를 조장하는 금속 원소가 포함되어 있으며, 상기 금속 원소로서 니켈(Ni)이 이용되고 있으며, 상기 니켈 원소는 1×1014원자개/㎤의 농도로 포함되어 있는 것을 특징으로 하는 반도체 장치.
  5. 제1항 또는 제2항에 있어서, 결정성 규소막중에는 규소의 결정화를 조장하는 금속 원소로서 니켈(Ni)가 포함되어 있으며, 상기 니켈 원소는 1×1016원자개/㎤~5×1017원자개/㎤의 농도로 포함되어 있는 것을 특징으로 하는 반도체 장치.
  6. 제1항 도는 제2항에 있어서, 결정성 규소막중에는 규소의 결정화를 조장하는 금속 원소가 포함되어 있으며, 상기 금속 원소로서 Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au로부터 선택된 일종 또는 복수 종류의 것이 이용되는 것을 특징으로 하는 반도체 장치.
  7. 제1항 또는 제2항에 있어서, 결정성 규소막중에는 규소의 결정화를 조장하는 금속 원소가 포함되어 있으며, 상기 금속 원소는 결정성 규소막의 표면 및/또는 이면으로 향하여 함유 농도가 높게되는 농도 분포를 갖고 있는 것을 특징으로 하는 반도체 장치.
  8. 제1항 또는 제2항에 있어서, 결정성 규소막중에는 할로겐 원소가 포함되어 있으며, 상기 할로겐 원소는 결정성 규소막의 표면 및/또는 이면으로 향하여 함유 농도가 높게되는 농도 분포를 갖는 것을 특징으로 하는 반도체 장치 규소의 결정화를 조장하는 금속 원소가 첨가되어 있는 것을 특징으로 하는 반도체 장치.
  9. 제1항 또는 제2항에 있어서, 결정성 규소막의 막두께는 100Å~700Å인 것을 특징으로 하는 반도체 장치.
  10. 제1항 또는 제2항에 있어서, 결정성 규소막의 표면에는 열산화막이 형성되어 있으며, 상기 열산화막의 막두께는 결정성 규소막의 두께보다 두꺼운 것을 특징으로 하는 반도체 장치.
  11. 절연 표면상에 비정질 규소막을 만드는 공정과, 상기 비정질 규소막을 규소의 결정화를 조장하는 금속 원소의 작용에 의해 결정화시켜 결정성 규소막을 얻는 공정과, 할로겐 원자를 함유시킨 산화성 분위기중에서 800℃~1100℃로 가열 처리하므로써 상기 결정성 규소막의 표면에 제1의 열산화막을 형성하는 공정과, 상기 제1의 열산화막을 제거하는 공정과, 상기 결정성 규소막의 표면에 제2의 열산화막을 형성하는 공정을 가지며, 다수의 점에서 방사형으로 결정 성장된 결정성 규소막을 얻는 것을 특징으로 하는 반도체 장치의 제작 방법.
  12. 제11항에 있어서, 제1 및 제2의 열산화막의 합계는 최종적으로 얻어지는 결정성 규소막의 막두께는 보다도 두꺼운 것을 특징으로 하는 반도체 장치의 제작 방법.
  13. 제11항에 있어서, 규소의 결정화를 조장하는 금속 원소로서 니켈(Ni)를 이용하는 것을 특징으로 하는 반도체 장치의 제작 방법.
  14. 제11항에 있어서, 규소의 결정화를 조장하는 금속원소로서 Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au로부터 선택된 일종 또는 복수 종류의 것을 이용하는 것을 특징으로 하는 반도체.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970001221A 1996-01-19 1997-01-17 반도체장치의제작방법,표시장치,및전계발광표시장치 KR100474790B1 (ko)

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JPH09312404A (ja) 1997-12-02
JP3645380B2 (ja) 2005-05-11
US20030001158A1 (en) 2003-01-02
US7679087B2 (en) 2010-03-16
US7427780B2 (en) 2008-09-23
CN1163487A (zh) 1997-10-29

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