JPH11251600A5 - - Google Patents

Info

Publication number
JPH11251600A5
JPH11251600A5 JP1998071311A JP7131198A JPH11251600A5 JP H11251600 A5 JPH11251600 A5 JP H11251600A5 JP 1998071311 A JP1998071311 A JP 1998071311A JP 7131198 A JP7131198 A JP 7131198A JP H11251600 A5 JPH11251600 A5 JP H11251600A5
Authority
JP
Japan
Prior art keywords
active layer
amorphous silicon
germanium
forming
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998071311A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11251600A (ja
JP3980159B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP07131198A priority Critical patent/JP3980159B2/ja
Priority claimed from JP07131198A external-priority patent/JP3980159B2/ja
Priority to US09/262,657 priority patent/US6759677B1/en
Publication of JPH11251600A publication Critical patent/JPH11251600A/ja
Priority to US10/882,790 priority patent/US7118994B2/en
Publication of JPH11251600A5 publication Critical patent/JPH11251600A5/ja
Priority to US11/519,514 priority patent/US7678624B2/en
Application granted granted Critical
Publication of JP3980159B2 publication Critical patent/JP3980159B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP07131198A 1998-03-05 1998-03-05 半導体装置の作製方法 Expired - Fee Related JP3980159B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP07131198A JP3980159B2 (ja) 1998-03-05 1998-03-05 半導体装置の作製方法
US09/262,657 US6759677B1 (en) 1998-03-05 1999-03-04 Semiconductor device and method for manufacturing same
US10/882,790 US7118994B2 (en) 1998-03-05 2004-07-01 Semiconductor device and method for manufacturing same
US11/519,514 US7678624B2 (en) 1998-03-05 2006-09-12 Semiconductor device and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07131198A JP3980159B2 (ja) 1998-03-05 1998-03-05 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH11251600A JPH11251600A (ja) 1999-09-17
JPH11251600A5 true JPH11251600A5 (enExample) 2005-09-02
JP3980159B2 JP3980159B2 (ja) 2007-09-26

Family

ID=13456953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07131198A Expired - Fee Related JP3980159B2 (ja) 1998-03-05 1998-03-05 半導体装置の作製方法

Country Status (2)

Country Link
US (3) US6759677B1 (enExample)
JP (1) JP3980159B2 (enExample)

Families Citing this family (18)

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US6876145B1 (en) 1999-09-30 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Organic electroluminescent display device
TW525305B (en) 2000-02-22 2003-03-21 Semiconductor Energy Lab Self-light-emitting device and method of manufacturing the same
JP3856619B2 (ja) * 2000-04-13 2006-12-13 三菱電機株式会社 半導体装置、液晶表示装置、半導体装置の製造方法および液晶表示装置の製造方法
JP2001345451A (ja) * 2000-05-30 2001-12-14 Hitachi Ltd 薄膜半導体集積回路装置、それを用いた画像表示装置、及びその製造方法
JP4869504B2 (ja) * 2000-06-27 2012-02-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW550648B (en) * 2001-07-02 2003-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP2004071874A (ja) * 2002-08-07 2004-03-04 Sharp Corp 半導体装置製造方法および半導体装置
US6882010B2 (en) * 2002-10-03 2005-04-19 Micron Technology, Inc. High performance three-dimensional TFT-based CMOS inverters, and computer systems utilizing such novel CMOS inverters
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
KR100759555B1 (ko) 2005-06-24 2007-09-18 삼성에스디아이 주식회사 평판 표시장치 및 그 제조 방법
GB0718632D0 (en) * 2007-05-16 2007-11-07 Seereal Technologies Sa Holograms
US8218211B2 (en) 2007-05-16 2012-07-10 Seereal Technologies S.A. Holographic display with a variable beam deflection
US8030655B2 (en) 2007-12-03 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor
JP5527966B2 (ja) 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
FR3014244B1 (fr) * 2013-11-29 2018-05-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede ameliore de realisation d'un substrat semi-conducteur contraint sur isolant

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US5587329A (en) 1994-08-24 1996-12-24 David Sarnoff Research Center, Inc. Method for fabricating a switching transistor having a capacitive network proximate a drift region
US5915174A (en) 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
JP3778456B2 (ja) 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
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JP3393571B2 (ja) * 1996-03-28 2003-04-07 シャープ株式会社 半導体装置およびその製造方法
JP3983334B2 (ja) 1997-02-20 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4401448B2 (ja) * 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6617648B1 (en) * 1998-02-25 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Projection TV
JP4588167B2 (ja) * 2000-05-12 2010-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002083974A (ja) * 2000-06-19 2002-03-22 Semiconductor Energy Lab Co Ltd 半導体装置
JP4358998B2 (ja) * 2001-02-01 2009-11-04 株式会社日立製作所 薄膜トランジスタ装置およびその製造方法
US6380590B1 (en) 2001-02-22 2002-04-30 Advanced Micro Devices, Inc. SOI chip having multiple threshold voltage MOSFETs by using multiple channel materials and method of fabricating same

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