JPH10135350A5 - - Google Patents

Info

Publication number
JPH10135350A5
JPH10135350A5 JP1996308686A JP30868696A JPH10135350A5 JP H10135350 A5 JPH10135350 A5 JP H10135350A5 JP 1996308686 A JP1996308686 A JP 1996308686A JP 30868696 A JP30868696 A JP 30868696A JP H10135350 A5 JPH10135350 A5 JP H10135350A5
Authority
JP
Japan
Prior art keywords
region
impurity
channel
impurity region
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996308686A
Other languages
English (en)
Japanese (ja)
Other versions
JP3587636B2 (ja
JPH10135350A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP30868696A priority Critical patent/JP3587636B2/ja
Priority claimed from JP30868696A external-priority patent/JP3587636B2/ja
Priority to US08/963,977 priority patent/US6118148A/en
Publication of JPH10135350A publication Critical patent/JPH10135350A/ja
Priority to US09/546,637 priority patent/US6251733B1/en
Priority to US09/875,407 priority patent/US6690075B2/en
Publication of JPH10135350A5 publication Critical patent/JPH10135350A5/ja
Application granted granted Critical
Publication of JP3587636B2 publication Critical patent/JP3587636B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP30868696A 1996-11-04 1996-11-04 半導体装置およびその作製方法 Expired - Fee Related JP3587636B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP30868696A JP3587636B2 (ja) 1996-11-04 1996-11-04 半導体装置およびその作製方法
US08/963,977 US6118148A (en) 1996-11-04 1997-11-04 Semiconductor device and manufacturing method thereof
US09/546,637 US6251733B1 (en) 1996-11-04 2000-04-07 Semiconductor device and manufacturing method thereof
US09/875,407 US6690075B2 (en) 1996-11-04 2001-06-04 Semiconductor device with channel having plural impurity regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30868696A JP3587636B2 (ja) 1996-11-04 1996-11-04 半導体装置およびその作製方法

Publications (3)

Publication Number Publication Date
JPH10135350A JPH10135350A (ja) 1998-05-22
JPH10135350A5 true JPH10135350A5 (enExample) 2004-11-04
JP3587636B2 JP3587636B2 (ja) 2004-11-10

Family

ID=17984073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30868696A Expired - Fee Related JP3587636B2 (ja) 1996-11-04 1996-11-04 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JP3587636B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE42097E1 (en) 1998-09-04 2011-02-01 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4492065B2 (ja) * 2003-08-27 2010-06-30 セイコーエプソン株式会社 電気光学装置およびそれを用いた電子機器
JP2007158371A (ja) * 2007-02-02 2007-06-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2010161388A (ja) * 2010-02-18 2010-07-22 Semiconductor Energy Lab Co Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE42097E1 (en) 1998-09-04 2011-02-01 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device

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