JP3587636B2 - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
- Publication number
- JP3587636B2 JP3587636B2 JP30868696A JP30868696A JP3587636B2 JP 3587636 B2 JP3587636 B2 JP 3587636B2 JP 30868696 A JP30868696 A JP 30868696A JP 30868696 A JP30868696 A JP 30868696A JP 3587636 B2 JP3587636 B2 JP 3587636B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- channel
- impurity regions
- semiconductor device
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000012535 impurity Substances 0.000 claims description 64
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000000694 effects Effects 0.000 description 42
- 239000010408 film Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000012447 hatching Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30868696A JP3587636B2 (ja) | 1996-11-04 | 1996-11-04 | 半導体装置およびその作製方法 |
| US08/963,977 US6118148A (en) | 1996-11-04 | 1997-11-04 | Semiconductor device and manufacturing method thereof |
| US09/546,637 US6251733B1 (en) | 1996-11-04 | 2000-04-07 | Semiconductor device and manufacturing method thereof |
| US09/875,407 US6690075B2 (en) | 1996-11-04 | 2001-06-04 | Semiconductor device with channel having plural impurity regions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30868696A JP3587636B2 (ja) | 1996-11-04 | 1996-11-04 | 半導体装置およびその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10135350A JPH10135350A (ja) | 1998-05-22 |
| JPH10135350A5 JPH10135350A5 (enExample) | 2004-11-04 |
| JP3587636B2 true JP3587636B2 (ja) | 2004-11-10 |
Family
ID=17984073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30868696A Expired - Fee Related JP3587636B2 (ja) | 1996-11-04 | 1996-11-04 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3587636B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012864A (ja) | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP4476390B2 (ja) | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4492065B2 (ja) * | 2003-08-27 | 2010-06-30 | セイコーエプソン株式会社 | 電気光学装置およびそれを用いた電子機器 |
| JP2007158371A (ja) * | 2007-02-02 | 2007-06-21 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2010161388A (ja) * | 2010-02-18 | 2010-07-22 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
-
1996
- 1996-11-04 JP JP30868696A patent/JP3587636B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10135350A (ja) | 1998-05-22 |
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