JP2003133559A5 - - Google Patents

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Publication number
JP2003133559A5
JP2003133559A5 JP2001330276A JP2001330276A JP2003133559A5 JP 2003133559 A5 JP2003133559 A5 JP 2003133559A5 JP 2001330276 A JP2001330276 A JP 2001330276A JP 2001330276 A JP2001330276 A JP 2001330276A JP 2003133559 A5 JP2003133559 A5 JP 2003133559A5
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JP
Japan
Prior art keywords
wiring
wiring layer
region
impurity diffusion
diffusion region
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JP2001330276A
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English (en)
Japanese (ja)
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JP2003133559A (ja
JP4176342B2 (ja
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Priority to JP2001330276A priority Critical patent/JP4176342B2/ja
Priority claimed from JP2001330276A external-priority patent/JP4176342B2/ja
Priority to US10/280,022 priority patent/US6815771B2/en
Publication of JP2003133559A publication Critical patent/JP2003133559A/ja
Priority to US10/956,094 priority patent/US7160786B2/en
Priority to US10/956,049 priority patent/US20050059202A1/en
Publication of JP2003133559A5 publication Critical patent/JP2003133559A5/ja
Application granted granted Critical
Publication of JP4176342B2 publication Critical patent/JP4176342B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001330276A 2001-10-29 2001-10-29 半導体装置およびそのレイアウト方法 Expired - Fee Related JP4176342B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001330276A JP4176342B2 (ja) 2001-10-29 2001-10-29 半導体装置およびそのレイアウト方法
US10/280,022 US6815771B2 (en) 2001-10-29 2002-10-25 Silicon on insulator device and layout method of the same
US10/956,094 US7160786B2 (en) 2001-10-29 2004-10-04 Silicon on insulator device and layout method of the same
US10/956,049 US20050059202A1 (en) 2001-10-29 2004-10-04 Silicon on insulator device and layout method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001330276A JP4176342B2 (ja) 2001-10-29 2001-10-29 半導体装置およびそのレイアウト方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008189806A Division JP2008294463A (ja) 2008-07-23 2008-07-23 半導体装置

Publications (3)

Publication Number Publication Date
JP2003133559A JP2003133559A (ja) 2003-05-09
JP2003133559A5 true JP2003133559A5 (enExample) 2005-06-30
JP4176342B2 JP4176342B2 (ja) 2008-11-05

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JP2001330276A Expired - Fee Related JP4176342B2 (ja) 2001-10-29 2001-10-29 半導体装置およびそのレイアウト方法

Country Status (2)

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US (3) US6815771B2 (enExample)
JP (1) JP4176342B2 (enExample)

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JP5766462B2 (ja) * 2011-02-24 2015-08-19 ローム株式会社 半導体装置およびその製造方法
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CN106876872A (zh) * 2016-12-20 2017-06-20 西安科锐盛创新科技有限公司 基于AlAs/Ge/AlAs结构的Ge基可重构偶极子天线的制备方法
CN106785335A (zh) * 2016-12-20 2017-05-31 西安科锐盛创新科技有限公司 频率可重构偶极子天线的Ge基等离子pin二极管的制备工艺
CN106785332A (zh) * 2016-12-20 2017-05-31 西安科锐盛创新科技有限公司 应用于可重构环形天线的Ge基异质SPiN二极管的制备方法
CN106816685A (zh) * 2016-12-20 2017-06-09 西安科锐盛创新科技有限公司 频率可重构偶极子天线的spin二极管器件的制造工艺
CN106785333A (zh) * 2016-12-20 2017-05-31 西安科锐盛创新科技有限公司 用于多层全息天线的GaAs‑Ge‑GaAs异质结构的pin二极管制备方法
CN106847680B (zh) * 2016-12-20 2021-03-05 西安科锐盛创新科技有限公司 基于GaAs的频率可重构套筒偶极子天线的制备方法
CN106876873A (zh) * 2016-12-20 2017-06-20 西安科锐盛创新科技有限公司 频率可重构偶极子天线的GaAs基等离子pin二极管的制备方法
JP7071252B2 (ja) * 2018-09-28 2022-05-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102496371B1 (ko) 2018-10-30 2023-02-07 삼성전자주식회사 반도체 장치

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