JPH11233789A5 - - Google Patents

Info

Publication number
JPH11233789A5
JPH11233789A5 JP1998048672A JP4867298A JPH11233789A5 JP H11233789 A5 JPH11233789 A5 JP H11233789A5 JP 1998048672 A JP1998048672 A JP 1998048672A JP 4867298 A JP4867298 A JP 4867298A JP H11233789 A5 JPH11233789 A5 JP H11233789A5
Authority
JP
Japan
Prior art keywords
region
semiconductor element
thin film
semiconductor
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1998048672A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11233789A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10048672A priority Critical patent/JPH11233789A/ja
Priority claimed from JP10048672A external-priority patent/JPH11233789A/ja
Publication of JPH11233789A publication Critical patent/JPH11233789A/ja
Publication of JPH11233789A5 publication Critical patent/JPH11233789A5/ja
Withdrawn legal-status Critical Current

Links

JP10048672A 1998-02-12 1998-02-12 半導体装置 Withdrawn JPH11233789A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10048672A JPH11233789A (ja) 1998-02-12 1998-02-12 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10048672A JPH11233789A (ja) 1998-02-12 1998-02-12 半導体装置

Publications (2)

Publication Number Publication Date
JPH11233789A JPH11233789A (ja) 1999-08-27
JPH11233789A5 true JPH11233789A5 (enExample) 2005-08-18

Family

ID=12809825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10048672A Withdrawn JPH11233789A (ja) 1998-02-12 1998-02-12 半導体装置

Country Status (1)

Country Link
JP (1) JPH11233789A (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724037B2 (en) 2000-07-21 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
JP3899236B2 (ja) * 2001-02-16 2007-03-28 シャープ株式会社 イメージセンサの製造方法
US7312110B2 (en) 2004-04-06 2007-12-25 Samsung Electronics Co., Ltd. Methods of fabricating semiconductor devices having thin film transistors
JP2006286752A (ja) * 2005-03-31 2006-10-19 Sharp Corp ３次元半導体集積回路装置の製造方法および３次元半導体集積回路装置
US8008137B2 (en) * 2006-03-15 2011-08-30 Marvell World Trade Ltd. Method for fabricating 1T-DRAM on bulk silicon
JP2007019540A (ja) * 2006-09-20 2007-01-25 Sharp Corp イメージセンサ
WO2011048929A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20220153647A (ko) 2009-10-29 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20250075719A (ko) * 2009-10-30 2025-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101928723B1 (ko) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101770976B1 (ko) 2009-12-11 2017-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
IN2012DN04871A (enExample) * 2009-12-11 2015-09-25 Semiconductor Energy Laoboratory Co Ltd
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011077946A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
KR101838130B1 (ko) * 2010-02-12 2018-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작방법
CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
KR101884031B1 (ko) * 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
TWI511236B (zh) * 2010-05-14 2015-12-01 Semiconductor Energy Lab 半導體裝置
JP5714973B2 (ja) 2010-05-21 2015-05-07 株式会社半導体エネルギー研究所 半導体装置
WO2011155295A1 (en) * 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
JP5908263B2 (ja) 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 Ｄｃ−ｄｃコンバータ
WO2012086481A1 (ja) * 2010-12-21 2012-06-28 シャープ株式会社 半導体装置およびその製造方法
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6030298B2 (ja) * 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 緩衝記憶装置及び信号処理回路
TWI602303B (zh) * 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102233959B1 (ko) * 2011-01-28 2021-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9142320B2 (en) * 2011-04-08 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
TWI548057B (zh) * 2011-04-22 2016-09-01 半導體能源研究所股份有限公司 半導體裝置
JP6231735B2 (ja) 2011-06-01 2017-11-15 株式会社半導体エネルギー研究所 半導体装置
JP2014222740A (ja) * 2013-05-14 2014-11-27 株式会社東芝 半導体記憶装置
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
JP6560508B2 (ja) 2014-03-13 2019-08-14 株式会社半導体エネルギー研究所 半導体装置
US10522693B2 (en) 2015-01-16 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
JP7541977B2 (ja) * 2019-06-26 2024-08-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置

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