JPH1117169A5 - - Google Patents

Info

Publication number
JPH1117169A5
JPH1117169A5 JP1997185854A JP18585497A JPH1117169A5 JP H1117169 A5 JPH1117169 A5 JP H1117169A5 JP 1997185854 A JP1997185854 A JP 1997185854A JP 18585497 A JP18585497 A JP 18585497A JP H1117169 A5 JPH1117169 A5 JP H1117169A5
Authority
JP
Japan
Prior art keywords
region
impurity
semiconductor device
drain
channel forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997185854A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1117169A (ja
JP4104701B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP18585497A priority Critical patent/JP4104701B2/ja
Priority claimed from JP18585497A external-priority patent/JP4104701B2/ja
Priority to US09/103,473 priority patent/US6232642B1/en
Publication of JPH1117169A publication Critical patent/JPH1117169A/ja
Publication of JPH1117169A5 publication Critical patent/JPH1117169A5/ja
Application granted granted Critical
Publication of JP4104701B2 publication Critical patent/JP4104701B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP18585497A 1997-06-26 1997-06-26 半導体装置 Expired - Fee Related JP4104701B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP18585497A JP4104701B2 (ja) 1997-06-26 1997-06-26 半導体装置
US09/103,473 US6232642B1 (en) 1997-06-26 1998-06-24 Semiconductor device having impurity region locally at an end of channel formation region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18585497A JP4104701B2 (ja) 1997-06-26 1997-06-26 半導体装置

Publications (3)

Publication Number Publication Date
JPH1117169A JPH1117169A (ja) 1999-01-22
JPH1117169A5 true JPH1117169A5 (enExample) 2005-03-10
JP4104701B2 JP4104701B2 (ja) 2008-06-18

Family

ID=16178049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18585497A Expired - Fee Related JP4104701B2 (ja) 1997-06-26 1997-06-26 半導体装置

Country Status (2)

Country Link
US (1) US6232642B1 (enExample)
JP (1) JP4104701B2 (enExample)

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US6724037B2 (en) 2000-07-21 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
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JP5555864B2 (ja) * 2009-12-22 2014-07-23 株式会社ブルックマンテクノロジ 絶縁ゲート型半導体素子及び絶縁ゲート型半導体集積回路
JP5367651B2 (ja) * 2010-06-28 2013-12-11 日立オートモティブシステムズ株式会社 電流制御用半導体素子、およびそれを用いた制御装置
JP5897910B2 (ja) 2011-01-20 2016-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8742481B2 (en) 2011-08-16 2014-06-03 Micron Technology, Inc. Apparatuses and methods comprising a channel region having different minority carrier lifetimes
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102097171B1 (ko) 2012-01-20 2020-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2016081950A (ja) * 2014-10-10 2016-05-16 ソニー株式会社 画素回路および撮像装置
US9406771B1 (en) * 2015-09-15 2016-08-02 United Microelectronics Corp. Semiconductor structure and manufacturing method thereof
CN107968123B (zh) * 2017-11-29 2019-04-16 中国电子科技集团公司第十三研究所 一种增强型场效应晶体管
US11031395B2 (en) * 2018-07-13 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming high performance MOSFETs having varying channel structures
US20250241004A1 (en) * 2024-01-18 2025-07-24 Psemi Corporation Low-Leakage NEDMOS and LDMOS Devices

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