JPH1065165A5 - - Google Patents

Info

Publication number
JPH1065165A5
JPH1065165A5 JP1996241257A JP24125796A JPH1065165A5 JP H1065165 A5 JPH1065165 A5 JP H1065165A5 JP 1996241257 A JP1996241257 A JP 1996241257A JP 24125796 A JP24125796 A JP 24125796A JP H1065165 A5 JPH1065165 A5 JP H1065165A5
Authority
JP
Japan
Prior art keywords
region
mos device
power mos
impurity
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996241257A
Other languages
English (en)
Japanese (ja)
Other versions
JP4059939B2 (ja
JPH1065165A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP24125796A priority Critical patent/JP4059939B2/ja
Priority claimed from JP24125796A external-priority patent/JP4059939B2/ja
Priority to US08/914,869 priority patent/US5952699A/en
Publication of JPH1065165A publication Critical patent/JPH1065165A/ja
Priority to US09/362,804 priority patent/US6703671B1/en
Publication of JPH1065165A5 publication Critical patent/JPH1065165A5/ja
Application granted granted Critical
Publication of JP4059939B2 publication Critical patent/JP4059939B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP24125796A 1996-08-23 1996-08-23 パワーｍｏｓデバイス及びその作製方法 Expired - Fee Related JP4059939B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP24125796A JP4059939B2 (ja) 1996-08-23 1996-08-23 パワーｍｏｓデバイス及びその作製方法
US08/914,869 US5952699A (en) 1996-08-23 1997-08-19 Insulated gate semiconductor device and method of manufacturing the same
US09/362,804 US6703671B1 (en) 1996-08-23 1999-07-28 Insulated gate semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24125796A JP4059939B2 (ja) 1996-08-23 1996-08-23 パワーｍｏｓデバイス及びその作製方法

Publications (3)

Publication Number Publication Date
JPH1065165A JPH1065165A (ja) 1998-03-06
JPH1065165A5 true JPH1065165A5 (enExample) 2004-11-04
JP4059939B2 JP4059939B2 (ja) 2008-03-12

Family

ID=17071559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24125796A Expired - Fee Related JP4059939B2 (ja) 1996-08-23 1996-08-23 パワーｍｏｓデバイス及びその作製方法

Country Status (2)

Country Link
US (1) US5952699A (enExample)
JP (1) JP4059939B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3634086B2 (ja) 1996-08-13 2005-03-30 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置の作製方法
US6703671B1 (en) * 1996-08-23 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US6590230B1 (en) 1996-10-15 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6118148A (en) 1996-11-04 2000-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4017706B2 (ja) * 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 半導体装置
JP4282778B2 (ja) 1997-08-05 2009-06-24 株式会社半導体エネルギー研究所 半導体装置
EP0915509B1 (en) * 1997-10-24 2005-12-28 STMicroelectronics S.r.l. Process for integrating, in a same semiconductor chip, MOS technology devices with different threshold voltages
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP4236722B2 (ja) * 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH11233788A (ja) * 1998-02-09 1999-08-27 Semiconductor Energy Lab Co Ltd 半導体装置
TW507258B (en) 2000-02-29 2002-10-21 Semiconductor Systems Corp Display device and method for fabricating the same
US7633471B2 (en) * 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
DE10161125C1 (de) * 2001-12-12 2003-07-31 Infineon Technologies Ag Halbleiterbauelement mit optimierter Stromdichte
TW565937B (en) * 2002-08-22 2003-12-11 Vanguard Int Semiconduct Corp Manufacturing method of source/drain device
EP1604404B1 (de) 2003-03-19 2011-06-22 Infineon Technologies AG Halbleiteraufbau mit hoch dotiertem kanalleitungsgebiet und verfahren zur herstellung eines halbleiteraufbaus
KR20110133541A (ko) * 2009-03-27 2011-12-13 스미토모덴키고교가부시키가이샤 Ｍｏｓｆｅｔ 및 ｍｏｓｆｅｔ의 제조 방법
EP2413365A4 (en) * 2009-03-27 2013-05-08 Sumitomo Electric Industries MOSFET AND MOSFET MANUFACTURING METHOD
DE112014006762B4 (de) * 2014-06-27 2021-09-30 Mitsubishi Electric Corporation Siliciumcarbid-Halbleiteranordnung
CN107046059B (zh) * 2016-02-05 2020-04-21 瀚薪科技股份有限公司 碳化硅半导体元件以及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01501272A (ja) * 1986-10-27 1989-04-27 ヒユーズ・エアクラフト・カンパニー ストライプ状のチャンネルのトランジスタおよびその製造方法
JP3194941B2 (ja) * 1990-03-19 2001-08-06 富士通株式会社 半導体装置
JP3301116B2 (ja) * 1992-07-20 2002-07-15 ソニー株式会社 半導体装置及びその製造方法
JP2848757B2 (ja) * 1993-03-19 1999-01-20 シャープ株式会社 電界効果トランジスタおよびその製造方法
US5426325A (en) * 1993-08-04 1995-06-20 Siliconix Incorporated Metal crossover in high voltage IC with graduated doping control
US5831294A (en) * 1993-09-30 1998-11-03 Sony Corporation Quantum box structure and carrier conductivity modulating device
JP3635683B2 (ja) * 1993-10-28 2005-04-06 ソニー株式会社 電界効果トランジスタ
US5516711A (en) * 1994-12-16 1996-05-14 Mosel Vitelic, Inc. Method for forming LDD CMOS with oblique implantation
US5478763A (en) * 1995-01-19 1995-12-26 United Microelectronics Corporation High performance field effect transistor and method of manufacture thereof
KR0161398B1 (ko) * 1995-03-13 1998-12-01 김광호 고내압 트랜지스터 및 그 제조방법
US5698884A (en) * 1996-02-07 1997-12-16 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same

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