JPH1065163A5 - - Google Patents

Info

Publication number
JPH1065163A5
JPH1065163A5 JP1996232552A JP23255296A JPH1065163A5 JP H1065163 A5 JPH1065163 A5 JP H1065163A5 JP 1996232552 A JP1996232552 A JP 1996232552A JP 23255296 A JP23255296 A JP 23255296A JP H1065163 A5 JPH1065163 A5 JP H1065163A5
Authority
JP
Japan
Prior art keywords
region
semiconductor device
insulated gate
impurity
gate semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996232552A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1065163A (ja
JP3949193B2 (ja
Filing date
Publication date
Priority claimed from JP23255296A external-priority patent/JP3949193B2/ja
Priority to JP23255296A priority Critical patent/JP3949193B2/ja
Application filed filed Critical
Priority to US08/907,579 priority patent/US6218714B1/en
Priority to KR1019970039449A priority patent/KR100443436B1/ko
Publication of JPH1065163A publication Critical patent/JPH1065163A/ja
Priority to US09/811,238 priority patent/US6617647B2/en
Priority to KR1020020047936A priority patent/KR100453400B1/ko
Publication of JPH1065163A5 publication Critical patent/JPH1065163A5/ja
Publication of JP3949193B2 publication Critical patent/JP3949193B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP23255296A 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置 Expired - Fee Related JP3949193B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP23255296A JP3949193B2 (ja) 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置
US08/907,579 US6218714B1 (en) 1996-08-13 1997-08-08 Insulated gate semiconductor device and method of manufacturing the same
KR1019970039449A KR100443436B1 (ko) 1996-08-13 1997-08-13 절연게이트형반도체장치
US09/811,238 US6617647B2 (en) 1996-08-13 2001-03-16 Insulated gate semiconductor device and method of manufacturing the same
KR1020020047936A KR100453400B1 (ko) 1996-08-13 2002-08-13 반도체 장치 제작 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23255296A JP3949193B2 (ja) 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006344148A Division JP4896699B2 (ja) 2006-12-21 2006-12-21 絶縁ゲイト型半導体装置およびその作製方法

Publications (3)

Publication Number Publication Date
JPH1065163A JPH1065163A (ja) 1998-03-06
JPH1065163A5 true JPH1065163A5 (enExample) 2004-10-21
JP3949193B2 JP3949193B2 (ja) 2007-07-25

Family

ID=16941122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23255296A Expired - Fee Related JP3949193B2 (ja) 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置

Country Status (3)

Country Link
US (2) US6218714B1 (enExample)
JP (1) JP3949193B2 (enExample)
KR (2) KR100443436B1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4103968B2 (ja) * 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US6590230B1 (en) 1996-10-15 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6118148A (en) 1996-11-04 2000-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4017706B2 (ja) 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 半導体装置
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP4236722B2 (ja) * 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7015546B2 (en) * 2000-02-23 2006-03-21 Semiconductor Research Corporation Deterministically doped field-effect devices and methods of making same
US6724037B2 (en) * 2000-07-21 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
JP4275336B2 (ja) 2001-11-16 2009-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100493018B1 (ko) * 2002-06-12 2005-06-07 삼성전자주식회사 반도체 장치의 제조방법
US7052966B2 (en) * 2003-04-09 2006-05-30 Newport Fab, Llc Deep N wells in triple well structures and method for fabricating same
US7829394B2 (en) * 2005-05-26 2010-11-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8304783B2 (en) * 2009-06-03 2012-11-06 Cree, Inc. Schottky diodes including polysilicon having low barrier heights and methods of fabricating the same
US20130137235A1 (en) * 2010-07-15 2013-05-30 University Of Electronic Science And Technology Of China Mos transistor using stress concentration effect for enhancing stress in channel area
JP5897910B2 (ja) 2011-01-20 2016-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI491050B (zh) 2011-11-25 2015-07-01 Sony Corp 電晶體，顯示器及電子裝置
FR3011678B1 (fr) * 2013-10-07 2017-01-27 St Microelectronics Crolles 2 Sas Procede de relaxation des contraites mecaniques transversales dans la region active d'un transistor mos, et circuit integre correspondant
JP2016029719A (ja) * 2014-07-17 2016-03-03 出光興産株式会社 薄膜トランジスタ
US20210036163A1 (en) * 2018-03-09 2021-02-04 Sakai Display Products Corporation Thin film transistor and production method therefor
US20200194555A1 (en) * 2018-12-18 2020-06-18 United Microelectronics Corp. Semiconductor device with reduced floating body effects and fabrication method thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151363A (en) * 1979-05-14 1980-11-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Mos semiconductor device and fabricating method of the same
US5350940A (en) * 1984-02-02 1994-09-27 Fastran, Inc. Enhanced mobility metal oxide semiconductor devices
US4697198A (en) * 1984-08-22 1987-09-29 Hitachi, Ltd. MOSFET which reduces the short-channel effect
IT1213234B (it) * 1984-10-25 1989-12-14 Sgs Thomson Microelectronics Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos.
JPS61256769A (ja) * 1985-05-10 1986-11-14 Toshiba Corp 半導体装置
EP0287658A1 (en) 1986-10-27 1988-10-26 Hughes Aircraft Company Striped-channel transistor and method of forming the same
JPH0231464A (ja) * 1988-07-21 1990-02-01 Mitsubishi Electric Corp 半導体装置
JPH02105467A (ja) * 1988-10-13 1990-04-18 Nec Corp Ｍｏｓ型半導体装置
JPH02159070A (ja) * 1988-12-13 1990-06-19 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
JPH02196468A (ja) * 1989-01-25 1990-08-03 Nec Corp 半導体装置
JPH0738447B2 (ja) * 1989-02-02 1995-04-26 松下電器産業株式会社 Ｍｏｓ型半導体装置
JPH036863A (ja) * 1989-06-05 1991-01-14 Takehide Shirato 半導体装置
US5210437A (en) * 1990-04-20 1993-05-11 Kabushiki Kaisha Toshiba MOS device having a well layer for controlling threshold voltage
JPH05283687A (ja) * 1992-03-31 1993-10-29 Oki Electric Ind Co Ltd 半導体素子の製造方法

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