KR100443436B1 - 절연게이트형반도체장치 - Google Patents

절연게이트형반도체장치 Download PDF

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Publication number
KR100443436B1
KR100443436B1 KR1019970039449A KR19970039449A KR100443436B1 KR 100443436 B1 KR100443436 B1 KR 100443436B1 KR 1019970039449 A KR1019970039449 A KR 1019970039449A KR 19970039449 A KR19970039449 A KR 19970039449A KR 100443436 B1 KR100443436 B1 KR 100443436B1
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region
impurity
channel forming
forming region
channel
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KR1019970039449A
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Korean (ko)
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KR19980018784A (ko
Inventor
순페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8181—Structures having no potential periodicity in the vertical direction, e.g. lateral superlattices or lateral surface superlattices [LSS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1019970039449A 1996-08-13 1997-08-13 절연게이트형반도체장치 Expired - Fee Related KR100443436B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23255296A JP3949193B2 (ja) 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置
JP96-232552 1996-08-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020020047936A Division KR100453400B1 (ko) 1996-08-13 2002-08-13 반도체 장치 제작 방법

Publications (2)

Publication Number Publication Date
KR19980018784A KR19980018784A (ko) 1998-06-05
KR100443436B1 true KR100443436B1 (ko) 2004-10-20

Family

ID=16941122

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019970039449A Expired - Fee Related KR100443436B1 (ko) 1996-08-13 1997-08-13 절연게이트형반도체장치
KR1020020047936A Expired - Fee Related KR100453400B1 (ko) 1996-08-13 2002-08-13 반도체 장치 제작 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020020047936A Expired - Fee Related KR100453400B1 (ko) 1996-08-13 2002-08-13 반도체 장치 제작 방법

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US (2) US6218714B1 (enExample)
JP (1) JP3949193B2 (enExample)
KR (2) KR100443436B1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4103968B2 (ja) * 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US6590230B1 (en) 1996-10-15 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6118148A (en) 1996-11-04 2000-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4017706B2 (ja) 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 半導体装置
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP4236722B2 (ja) * 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7015546B2 (en) * 2000-02-23 2006-03-21 Semiconductor Research Corporation Deterministically doped field-effect devices and methods of making same
US6724037B2 (en) * 2000-07-21 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
JP4275336B2 (ja) 2001-11-16 2009-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100493018B1 (ko) * 2002-06-12 2005-06-07 삼성전자주식회사 반도체 장치의 제조방법
US7052966B2 (en) * 2003-04-09 2006-05-30 Newport Fab, Llc Deep N wells in triple well structures and method for fabricating same
US7829394B2 (en) * 2005-05-26 2010-11-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8304783B2 (en) * 2009-06-03 2012-11-06 Cree, Inc. Schottky diodes including polysilicon having low barrier heights and methods of fabricating the same
US20130137235A1 (en) * 2010-07-15 2013-05-30 University Of Electronic Science And Technology Of China Mos transistor using stress concentration effect for enhancing stress in channel area
JP5897910B2 (ja) 2011-01-20 2016-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI491050B (zh) 2011-11-25 2015-07-01 Sony Corp 電晶體，顯示器及電子裝置
FR3011678B1 (fr) * 2013-10-07 2017-01-27 St Microelectronics Crolles 2 Sas Procede de relaxation des contraites mecaniques transversales dans la region active d'un transistor mos, et circuit integre correspondant
JP2016029719A (ja) * 2014-07-17 2016-03-03 出光興産株式会社 薄膜トランジスタ
US20210036163A1 (en) * 2018-03-09 2021-02-04 Sakai Display Products Corporation Thin film transistor and production method therefor
US20200194555A1 (en) * 2018-12-18 2020-06-18 United Microelectronics Corp. Semiconductor device with reduced floating body effects and fabrication method thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151363A (en) * 1979-05-14 1980-11-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Mos semiconductor device and fabricating method of the same
US5350940A (en) * 1984-02-02 1994-09-27 Fastran, Inc. Enhanced mobility metal oxide semiconductor devices
US4697198A (en) * 1984-08-22 1987-09-29 Hitachi, Ltd. MOSFET which reduces the short-channel effect
IT1213234B (it) * 1984-10-25 1989-12-14 Sgs Thomson Microelectronics Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos.
JPS61256769A (ja) * 1985-05-10 1986-11-14 Toshiba Corp 半導体装置
EP0287658A1 (en) 1986-10-27 1988-10-26 Hughes Aircraft Company Striped-channel transistor and method of forming the same
JPH0231464A (ja) * 1988-07-21 1990-02-01 Mitsubishi Electric Corp 半導体装置
JPH02105467A (ja) * 1988-10-13 1990-04-18 Nec Corp Ｍｏｓ型半導体装置
JPH02159070A (ja) * 1988-12-13 1990-06-19 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
JPH02196468A (ja) * 1989-01-25 1990-08-03 Nec Corp 半導体装置
JPH0738447B2 (ja) * 1989-02-02 1995-04-26 松下電器産業株式会社 Ｍｏｓ型半導体装置
JPH036863A (ja) * 1989-06-05 1991-01-14 Takehide Shirato 半導体装置
US5210437A (en) * 1990-04-20 1993-05-11 Kabushiki Kaisha Toshiba MOS device having a well layer for controlling threshold voltage
JPH05283687A (ja) * 1992-03-31 1993-10-29 Oki Electric Ind Co Ltd 半導体素子の製造方法

Also Published As

Publication number Publication date
KR19980018784A (ko) 1998-06-05
US6218714B1 (en) 2001-04-17
US20010023105A1 (en) 2001-09-20
JPH1065163A (ja) 1998-03-06
KR100453400B1 (ko) 2004-10-20
US6617647B2 (en) 2003-09-09
JP3949193B2 (ja) 2007-07-25

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