JPH1065164A5 - - Google Patents

Info

Publication number
JPH1065164A5
JPH1065164A5 JP1996232553A JP23255396A JPH1065164A5 JP H1065164 A5 JPH1065164 A5 JP H1065164A5 JP 1996232553 A JP1996232553 A JP 1996232553A JP 23255396 A JP23255396 A JP 23255396A JP H1065164 A5 JPH1065164 A5 JP H1065164A5
Authority
JP
Japan
Prior art keywords
region
impurity
semiconductor device
insulated gate
crystalline semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996232553A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1065164A (ja
JP3634086B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP23255396A external-priority patent/JP3634086B2/ja
Priority to JP23255396A priority Critical patent/JP3634086B2/ja
Priority to TW086110814A priority patent/TW357386B/zh
Priority to US08/907,578 priority patent/US6653687B1/en
Priority to GB9717145A priority patent/GB2316227B/en
Priority to KR1019970039450A priority patent/KR100443437B1/ko
Publication of JPH1065164A publication Critical patent/JPH1065164A/ja
Publication of JPH1065164A5 publication Critical patent/JPH1065164A5/ja
Publication of JP3634086B2 publication Critical patent/JP3634086B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP23255396A 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置の作製方法 Expired - Fee Related JP3634086B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP23255396A JP3634086B2 (ja) 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置の作製方法
TW086110814A TW357386B (en) 1996-08-13 1997-07-29 Insulating gate-type semiconductor and the manufacturing method
US08/907,578 US6653687B1 (en) 1996-08-13 1997-08-08 Insulated gate semiconductor device
GB9717145A GB2316227B (en) 1996-08-13 1997-08-12 Insulated gate semiconductor device and method of manufacturing the same
KR1019970039450A KR100443437B1 (ko) 1996-08-13 1997-08-13 절연게이트형반도체장치및그제작방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23255396A JP3634086B2 (ja) 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH1065164A JPH1065164A (ja) 1998-03-06
JPH1065164A5 true JPH1065164A5 (enExample) 2005-02-03
JP3634086B2 JP3634086B2 (ja) 2005-03-30

Family

ID=16941137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23255396A Expired - Fee Related JP3634086B2 (ja) 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置の作製方法

Country Status (5)

Country Link
US (1) US6653687B1 (enExample)
JP (1) JP3634086B2 (enExample)
KR (1) KR100443437B1 (enExample)
GB (1) GB2316227B (enExample)
TW (1) TW357386B (enExample)

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JP3634086B2 (ja) 1996-08-13 2005-03-30 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置の作製方法
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JP5247468B2 (ja) 2005-12-30 2013-07-24 ニューロテック ユーエスエー， インコーポレイテッド 生物活性分子の送達のための微粒子化デバイスおよびその使用方法
WO2010123994A1 (en) * 2009-04-23 2010-10-28 Neurotech Usa, Inc. Cell lines that produce prostaglandin f2 alpha (pgf2a) and uses thereof
JP2013507373A (ja) * 2009-10-08 2013-03-04 ニューロテック ユーエスエー， インコーポレイテッド 被包された細胞ベースの送達系におけるｐｅｄｆの使用
BR112013013255A2 (pt) 2010-12-02 2020-08-25 Neurotech Usa, Inc. linhagens celulares que secretam anticorpos-esqueletos antiangiogênicos e receptores solúveis e usos das mesmas
JP5897910B2 (ja) 2011-01-20 2016-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN104640579A (zh) 2012-05-30 2015-05-20 神经技术美国有限公司 冷冻保存的可植入细胞培养装置及其用途
ES2950987T3 (es) 2013-09-11 2023-10-17 Neurotech Usa Inc Cartucho para terapia con células encapsuladas
EP3662923A1 (en) 2015-05-27 2020-06-10 Neurotech USA, Inc. Use of encapsulated cell therapy for treatment of ophthalmic disorders
EP3136446A1 (en) 2015-08-28 2017-03-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Tft device and manufacturing method
JP2018098338A (ja) * 2016-12-13 2018-06-21 ソニーセミコンダクタソリューションズ株式会社 トンネル電界効果トランジスタ
WO2022011081A1 (en) 2020-07-09 2022-01-13 The United States Of America, As Represented By The Secretary, Department Of Health And Human Services Cell lines that produce human retinoschisin proteins and uses thereof

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JP3634086B2 (ja) 1996-08-13 2005-03-30 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置の作製方法
JP4059939B2 (ja) 1996-08-23 2008-03-12 株式会社半導体エネルギー研究所 パワーｍｏｓデバイス及びその作製方法
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