JPH11103068A5 - - Google Patents

Info

Publication number
JPH11103068A5
JPH11103068A5 JP1997282562A JP28256297A JPH11103068A5 JP H11103068 A5 JPH11103068 A5 JP H11103068A5 JP 1997282562 A JP1997282562 A JP 1997282562A JP 28256297 A JP28256297 A JP 28256297A JP H11103068 A5 JPH11103068 A5 JP H11103068A5
Authority
JP
Japan
Prior art keywords
conductive layer
film
semiconductor device
channel formation
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997282562A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11103068A (ja
JP4236716B2 (ja
Filing date
Publication date
Priority claimed from JP28256297A external-priority patent/JP4236716B2/ja
Priority to JP28256297A priority Critical patent/JP4236716B2/ja
Application filed filed Critical
Priority to US09/157,939 priority patent/US6121660A/en
Priority to KR1019980040090A priority patent/KR100567145B1/ko
Publication of JPH11103068A publication Critical patent/JPH11103068A/ja
Priority to US09/645,578 priority patent/US6680223B1/en
Priority to US10/428,092 priority patent/US6924528B2/en
Publication of JPH11103068A5 publication Critical patent/JPH11103068A5/ja
Publication of JP4236716B2 publication Critical patent/JP4236716B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP28256297A 1997-09-23 1997-09-29 半導体装置 Expired - Fee Related JP4236716B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP28256297A JP4236716B2 (ja) 1997-09-29 1997-09-29 半導体装置
US09/157,939 US6121660A (en) 1997-09-23 1998-09-22 Channel etch type bottom gate semiconductor device
KR1019980040090A KR100567145B1 (ko) 1997-09-23 1998-09-23 반도체장치및그제조방법
US09/645,578 US6680223B1 (en) 1997-09-23 2000-08-25 Semiconductor device and method of manufacturing the same
US10/428,092 US6924528B2 (en) 1997-09-23 2003-05-02 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28256297A JP4236716B2 (ja) 1997-09-29 1997-09-29 半導体装置

Publications (3)

Publication Number Publication Date
JPH11103068A JPH11103068A (ja) 1999-04-13
JPH11103068A5 true JPH11103068A5 (enExample) 2005-05-26
JP4236716B2 JP4236716B2 (ja) 2009-03-11

Family

ID=17654104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28256297A Expired - Fee Related JP4236716B2 (ja) 1997-09-23 1997-09-29 半導体装置

Country Status (1)

Country Link
JP (1) JP4236716B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4118484B2 (ja) * 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4574261B2 (ja) * 2004-07-16 2010-11-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4906039B2 (ja) * 2004-08-03 2012-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4879530B2 (ja) * 2004-09-08 2012-02-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4700317B2 (ja) * 2004-09-30 2011-06-15 株式会社半導体エネルギー研究所 表示装置の作製方法
JP5238132B2 (ja) * 2005-02-03 2013-07-17 株式会社半導体エネルギー研究所 半導体装置、モジュール、および電子機器
TW202429692A (zh) 2006-09-29 2024-07-16 日商半導體能源研究所股份有限公司 半導體裝置
TWI330406B (en) * 2006-12-29 2010-09-11 Au Optronics Corp A method for manufacturing a thin film transistor
JP2008311545A (ja) * 2007-06-18 2008-12-25 Hitachi Displays Ltd 表示装置
US7633089B2 (en) * 2007-07-26 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device provided with the same
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
WO2011007711A1 (ja) * 2009-07-14 2011-01-20 シャープ株式会社 薄膜トランジスタ、表示装置、及び薄膜トランジスタの製造方法

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