JPH1197706A5 - - Google Patents

Info

Publication number
JPH1197706A5
JPH1197706A5 JP1997276576A JP27657697A JPH1197706A5 JP H1197706 A5 JPH1197706 A5 JP H1197706A5 JP 1997276576 A JP1997276576 A JP 1997276576A JP 27657697 A JP27657697 A JP 27657697A JP H1197706 A5 JPH1197706 A5 JP H1197706A5
Authority
JP
Japan
Prior art keywords
conductive layer
region
film
semiconductor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1997276576A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1197706A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9276576A priority Critical patent/JPH1197706A/ja
Priority claimed from JP9276576A external-priority patent/JPH1197706A/ja
Priority to US09/157,939 priority patent/US6121660A/en
Priority to KR1019980040090A priority patent/KR100567145B1/ko
Publication of JPH1197706A publication Critical patent/JPH1197706A/ja
Priority to US09/645,578 priority patent/US6680223B1/en
Priority to US10/428,092 priority patent/US6924528B2/en
Publication of JPH1197706A5 publication Critical patent/JPH1197706A5/ja
Withdrawn legal-status Critical Current

Links

JP9276576A 1997-09-23 1997-09-23 半導体装置およびその作製方法 Withdrawn JPH1197706A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9276576A JPH1197706A (ja) 1997-09-23 1997-09-23 半導体装置およびその作製方法
US09/157,939 US6121660A (en) 1997-09-23 1998-09-22 Channel etch type bottom gate semiconductor device
KR1019980040090A KR100567145B1 (ko) 1997-09-23 1998-09-23 반도체장치및그제조방법
US09/645,578 US6680223B1 (en) 1997-09-23 2000-08-25 Semiconductor device and method of manufacturing the same
US10/428,092 US6924528B2 (en) 1997-09-23 2003-05-02 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9276576A JPH1197706A (ja) 1997-09-23 1997-09-23 半導体装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004216656A Division JP4286741B2 (ja) 2004-07-26 2004-07-26 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JPH1197706A JPH1197706A (ja) 1999-04-09
JPH1197706A5 true JPH1197706A5 (enExample) 2005-05-26

Family

ID=17571402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9276576A Withdrawn JPH1197706A (ja) 1997-09-23 1997-09-23 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPH1197706A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007342A (ja) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002141514A (ja) * 2000-11-07 2002-05-17 Sanyo Electric Co Ltd ボトムゲート型薄膜トランジスタ及びその製造方法
JP2002176001A (ja) 2000-12-05 2002-06-21 Semiconductor Energy Lab Co Ltd 熱処理装置
US6759313B2 (en) * 2000-12-05 2004-07-06 Semiconductor Energy Laboratory Co., Ltd Method of fabricating a semiconductor device
JP4993810B2 (ja) * 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5088993B2 (ja) * 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4906106B2 (ja) * 2003-07-14 2012-03-28 株式会社半導体エネルギー研究所 発光装置
JP4112527B2 (ja) * 2003-07-14 2008-07-02 株式会社半導体エネルギー研究所 システムオンパネル型の発光装置の作製方法
TWI368774B (en) 2003-07-14 2012-07-21 Semiconductor Energy Lab Light-emitting device
US6912082B1 (en) * 2004-03-11 2005-06-28 Palo Alto Research Center Incorporated Integrated driver electronics for MEMS device using high voltage thin film transistors
US7416928B2 (en) 2004-09-08 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2008258345A (ja) * 2007-04-04 2008-10-23 Sony Corp 薄膜トランジスタおよびその製造方法ならびに表示装置
JP2010225780A (ja) * 2009-03-23 2010-10-07 Casio Computer Co Ltd 薄膜トランジスタ及び薄膜トランジスタの製造方法

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