JPH1197706A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法Info
- Publication number
- JPH1197706A JPH1197706A JP9276576A JP27657697A JPH1197706A JP H1197706 A JPH1197706 A JP H1197706A JP 9276576 A JP9276576 A JP 9276576A JP 27657697 A JP27657697 A JP 27657697A JP H1197706 A JPH1197706 A JP H1197706A
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductive layer
- layer
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 141
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 238000000034 method Methods 0.000 claims abstract description 48
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 30
- 239000011574 phosphorus Substances 0.000 claims abstract description 30
- 238000005468 ion implantation Methods 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 59
- 239000012535 impurity Substances 0.000 claims description 39
- 239000013078 crystal Substances 0.000 claims description 29
- 238000005247 gettering Methods 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
- 230000003197 catalytic effect Effects 0.000 claims description 12
- 238000002425 crystallisation Methods 0.000 claims description 11
- 230000008025 crystallization Effects 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 9
- 239000003054 catalyst Substances 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 159
- 239000010408 film Substances 0.000 description 114
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000000059 patterning Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000010532 solid phase synthesis reaction Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229930091051 Arenine Natural products 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000007715 excimer laser crystallization Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000002789 length control Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- FBMUYWXYWIZLNE-UHFFFAOYSA-N nickel phosphide Chemical compound [Ni]=P#[Ni] FBMUYWXYWIZLNE-UHFFFAOYSA-N 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Shift Register Type Memory (AREA)
- Thin Film Transistor (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9276576A JPH1197706A (ja) | 1997-09-23 | 1997-09-23 | 半導体装置およびその作製方法 |
| US09/157,939 US6121660A (en) | 1997-09-23 | 1998-09-22 | Channel etch type bottom gate semiconductor device |
| KR1019980040090A KR100567145B1 (ko) | 1997-09-23 | 1998-09-23 | 반도체장치및그제조방법 |
| US09/645,578 US6680223B1 (en) | 1997-09-23 | 2000-08-25 | Semiconductor device and method of manufacturing the same |
| US10/428,092 US6924528B2 (en) | 1997-09-23 | 2003-05-02 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9276576A JPH1197706A (ja) | 1997-09-23 | 1997-09-23 | 半導体装置およびその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004216656A Division JP4286741B2 (ja) | 2004-07-26 | 2004-07-26 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1197706A true JPH1197706A (ja) | 1999-04-09 |
| JPH1197706A5 JPH1197706A5 (enExample) | 2005-05-26 |
Family
ID=17571402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9276576A Withdrawn JPH1197706A (ja) | 1997-09-23 | 1997-09-23 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1197706A (enExample) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001007342A (ja) * | 1999-04-20 | 2001-01-12 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2002176001A (ja) | 2000-12-05 | 2002-06-21 | Semiconductor Energy Lab Co Ltd | 熱処理装置 |
| JP2002246395A (ja) * | 2001-02-16 | 2002-08-30 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2002246394A (ja) * | 2001-02-16 | 2002-08-30 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2005051211A (ja) * | 2003-07-14 | 2005-02-24 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| KR100500068B1 (ko) * | 2000-11-07 | 2005-07-18 | 산요덴키가부시키가이샤 | 보텀 게이트형 박막 트랜지스터 및 그 제조 방법 |
| JP2005254450A (ja) * | 2004-03-11 | 2005-09-22 | Palo Alto Research Center Inc | 高電圧薄膜トランジスタを使用するｍｅｍｓ装置のための集積化ドライバ電子工学 |
| JP2008010889A (ja) * | 2003-07-14 | 2008-01-17 | Semiconductor Energy Lab Co Ltd | 発光装置、電子機器 |
| US7416928B2 (en) | 2004-09-08 | 2008-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| WO2008123088A1 (ja) * | 2007-04-04 | 2008-10-16 | Sony Corporation | 薄膜トランジスタおよびその製造方法ならびに表示装置 |
| US7575985B2 (en) | 2000-12-05 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
| JP2010225780A (ja) * | 2009-03-23 | 2010-10-07 | Casio Computer Co Ltd | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
| JP2011199300A (ja) * | 2003-07-14 | 2011-10-06 | Semiconductor Energy Lab Co Ltd | 発光装置 |
-
1997
- 1997-09-23 JP JP9276576A patent/JPH1197706A/ja not_active Withdrawn
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001007342A (ja) * | 1999-04-20 | 2001-01-12 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| KR100500068B1 (ko) * | 2000-11-07 | 2005-07-18 | 산요덴키가부시키가이샤 | 보텀 게이트형 박막 트랜지스터 및 그 제조 방법 |
| US7575985B2 (en) | 2000-12-05 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
| JP2002176001A (ja) | 2000-12-05 | 2002-06-21 | Semiconductor Energy Lab Co Ltd | 熱処理装置 |
| KR101017861B1 (ko) * | 2000-12-05 | 2011-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
| KR100962054B1 (ko) * | 2000-12-05 | 2010-06-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
| JP2002246395A (ja) * | 2001-02-16 | 2002-08-30 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2002246394A (ja) * | 2001-02-16 | 2002-08-30 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2011199300A (ja) * | 2003-07-14 | 2011-10-06 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| JP2008010889A (ja) * | 2003-07-14 | 2008-01-17 | Semiconductor Energy Lab Co Ltd | 発光装置、電子機器 |
| JP2005051211A (ja) * | 2003-07-14 | 2005-02-24 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US8319219B2 (en) | 2003-07-14 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US8373166B2 (en) | 2003-07-14 | 2013-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US8735896B2 (en) | 2003-07-14 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP2005254450A (ja) * | 2004-03-11 | 2005-09-22 | Palo Alto Research Center Inc | 高電圧薄膜トランジスタを使用するｍｅｍｓ装置のための集積化ドライバ電子工学 |
| US7416928B2 (en) | 2004-09-08 | 2008-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| KR101110765B1 (ko) | 2004-09-08 | 2012-04-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제조 방법 |
| WO2008123088A1 (ja) * | 2007-04-04 | 2008-10-16 | Sony Corporation | 薄膜トランジスタおよびその製造方法ならびに表示装置 |
| JP2008258345A (ja) * | 2007-04-04 | 2008-10-23 | Sony Corp | 薄膜トランジスタおよびその製造方法ならびに表示装置 |
| KR101450043B1 (ko) * | 2007-04-04 | 2014-10-13 | 소니 주식회사 | 박막 트랜지스터 및 그 제조 방법 및 표시 장치 |
| JP2010225780A (ja) * | 2009-03-23 | 2010-10-07 | Casio Computer Co Ltd | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
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