TW357386B - Insulating gate-type semiconductor and the manufacturing method - Google Patents

Insulating gate-type semiconductor and the manufacturing method

Info

Publication number
TW357386B
TW357386B TW086110814A TW86110814A TW357386B TW 357386 B TW357386 B TW 357386B TW 086110814 A TW086110814 A TW 086110814A TW 86110814 A TW86110814 A TW 86110814A TW 357386 B TW357386 B TW 357386B
Authority
TW
Taiwan
Prior art keywords
field
type semiconductor
gate
manufacturing
insulating gate
Prior art date
Application number
TW086110814A
Other languages
English (en)
Chinese (zh)
Inventor
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Application granted granted Critical
Publication of TW357386B publication Critical patent/TW357386B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
TW086110814A 1996-08-13 1997-07-29 Insulating gate-type semiconductor and the manufacturing method TW357386B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23255396A JP3634086B2 (ja) 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置の作製方法

Publications (1)

Publication Number Publication Date
TW357386B true TW357386B (en) 1999-05-01

Family

ID=16941137

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086110814A TW357386B (en) 1996-08-13 1997-07-29 Insulating gate-type semiconductor and the manufacturing method

Country Status (5)

Country Link
US (1) US6653687B1 (enExample)
JP (1) JP3634086B2 (enExample)
KR (1) KR100443437B1 (enExample)
GB (1) GB2316227B (enExample)
TW (1) TW357386B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3634086B2 (ja) 1996-08-13 2005-03-30 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置の作製方法
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
TW451284B (en) * 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP4017706B2 (ja) * 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 半導体装置
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP4236722B2 (ja) 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US6420767B1 (en) * 2000-06-28 2002-07-16 Advanced Micro Devices, Inc. Capacitively coupled DTMOS on SOI
JP3874772B2 (ja) * 2004-07-21 2007-01-31 株式会社日立製作所 生体関連物質測定装置及び測定方法
JP5247468B2 (ja) 2005-12-30 2013-07-24 ニューロテック ユーエスエー， インコーポレイテッド 生物活性分子の送達のための微粒子化デバイスおよびその使用方法
WO2010123994A1 (en) * 2009-04-23 2010-10-28 Neurotech Usa, Inc. Cell lines that produce prostaglandin f2 alpha (pgf2a) and uses thereof
JP2013507373A (ja) * 2009-10-08 2013-03-04 ニューロテック ユーエスエー， インコーポレイテッド 被包された細胞ベースの送達系におけるｐｅｄｆの使用
BR112013013255A2 (pt) 2010-12-02 2020-08-25 Neurotech Usa, Inc. linhagens celulares que secretam anticorpos-esqueletos antiangiogênicos e receptores solúveis e usos das mesmas
JP5897910B2 (ja) 2011-01-20 2016-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN104640579A (zh) 2012-05-30 2015-05-20 神经技术美国有限公司 冷冻保存的可植入细胞培养装置及其用途
ES2950987T3 (es) 2013-09-11 2023-10-17 Neurotech Usa Inc Cartucho para terapia con células encapsuladas
EP3662923A1 (en) 2015-05-27 2020-06-10 Neurotech USA, Inc. Use of encapsulated cell therapy for treatment of ophthalmic disorders
EP3136446A1 (en) 2015-08-28 2017-03-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Tft device and manufacturing method
JP2018098338A (ja) * 2016-12-13 2018-06-21 ソニーセミコンダクタソリューションズ株式会社 トンネル電界効果トランジスタ
WO2022011081A1 (en) 2020-07-09 2022-01-13 The United States Of America, As Represented By The Secretary, Department Of Health And Human Services Cell lines that produce human retinoschisin proteins and uses thereof

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4454524A (en) 1978-03-06 1984-06-12 Ncr Corporation Device having implantation for controlling gate parasitic action
US4549336A (en) * 1981-12-28 1985-10-29 Mostek Corporation Method of making MOS read only memory by specified double implantation
US5350940A (en) 1984-02-02 1994-09-27 Fastran, Inc. Enhanced mobility metal oxide semiconductor devices
US4697198A (en) 1984-08-22 1987-09-29 Hitachi, Ltd. MOSFET which reduces the short-channel effect
JPS61256769A (ja) 1985-05-10 1986-11-14 Toshiba Corp 半導体装置
EP0287658A1 (en) 1986-10-27 1988-10-26 Hughes Aircraft Company Striped-channel transistor and method of forming the same
US4999682A (en) 1987-08-14 1991-03-12 Regents Of The University Of Minnesota Electronic and optoelectronic laser devices utilizing light hole properties
US4959697A (en) 1988-07-20 1990-09-25 Vtc Incorporated Short channel junction field effect transistor
JPH0231464A (ja) 1988-07-21 1990-02-01 Mitsubishi Electric Corp 半導体装置
JP2507567B2 (ja) 1988-11-25 1996-06-12 三菱電機株式会社 絶縁体基板上の半導体層に形成されたｍｏｓ型電界効果トランジスタ
JPH02159070A (ja) 1988-12-13 1990-06-19 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
JPH02196468A (ja) 1989-01-25 1990-08-03 Nec Corp 半導体装置
JPH0738447B2 (ja) 1989-02-02 1995-04-26 松下電器産業株式会社 Ｍｏｓ型半導体装置
JP3194941B2 (ja) 1990-03-19 2001-08-06 富士通株式会社 半導体装置
US5210437A (en) 1990-04-20 1993-05-11 Kabushiki Kaisha Toshiba MOS device having a well layer for controlling threshold voltage
JPH04206971A (ja) 1990-11-30 1992-07-28 Sharp Corp 薄膜半導体装置
JPH04286339A (ja) 1991-03-15 1992-10-12 Seiko Epson Corp 半導体装置及びその製造方法
US5196367A (en) 1991-05-08 1993-03-23 Industrial Technology Research Institute Modified field isolation process with no channel-stop implant encroachment
TW222345B (en) 1992-02-25 1994-04-11 Semicondustor Energy Res Co Ltd Semiconductor and its manufacturing method
JPH05283687A (ja) 1992-03-31 1993-10-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
JP3301116B2 (ja) 1992-07-20 2002-07-15 ソニー株式会社 半導体装置及びその製造方法
JP3456242B2 (ja) 1993-01-07 2003-10-14 セイコーエプソン株式会社 半導体装置及びその製造方法
US5324960A (en) * 1993-01-19 1994-06-28 Motorola, Inc. Dual-transistor structure and method of formation
JPH06244103A (ja) 1993-02-15 1994-09-02 Semiconductor Energy Lab Co Ltd 半導体の製造方法
JP2848757B2 (ja) 1993-03-19 1999-01-20 シャープ株式会社 電界効果トランジスタおよびその製造方法
KR960008735B1 (en) 1993-04-29 1996-06-29 Samsung Electronics Co Ltd Mos transistor and the manufacturing method thereof
JP2791858B2 (ja) 1993-06-25 1998-08-27 株式会社半導体エネルギー研究所 半導体装置作製方法
US5426325A (en) 1993-08-04 1995-06-20 Siliconix Incorporated Metal crossover in high voltage IC with graduated doping control
US5831294A (en) 1993-09-30 1998-11-03 Sony Corporation Quantum box structure and carrier conductivity modulating device
JP3635683B2 (ja) 1993-10-28 2005-04-06 ソニー株式会社 電界効果トランジスタ
JP2759415B2 (ja) 1993-11-05 1998-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH07226446A (ja) 1994-02-12 1995-08-22 Toshiba Corp 半導体装置及びその製造方法
JP3184065B2 (ja) * 1994-07-25 2001-07-09 セイコーインスツルメンツ株式会社 半導体集積回路装置及び電子機器
US5516711A (en) 1994-12-16 1996-05-14 Mosel Vitelic, Inc. Method for forming LDD CMOS with oblique implantation
US5478763A (en) 1995-01-19 1995-12-26 United Microelectronics Corporation High performance field effect transistor and method of manufacture thereof
KR0161398B1 (ko) 1995-03-13 1998-12-01 김광호 고내압 트랜지스터 및 그 제조방법
US5532175A (en) 1995-04-17 1996-07-02 Motorola, Inc. Method of adjusting a threshold voltage for a semiconductor device fabricated on a semiconductor on insulator substrate
US5661059A (en) 1995-04-18 1997-08-26 Advanced Micro Devices Boron penetration to suppress short channel effect in P-channel device
US5619053A (en) 1995-05-31 1997-04-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having an SOI structure
KR970004074A (ko) * 1995-06-05 1997-01-29 빈센트 비. 인그라시아 절연 게이트 전계 효과 트랜지스터 및 그 제조 방법
US5674788A (en) 1995-06-06 1997-10-07 Advanced Micro Devices, Inc. Method of forming high pressure silicon oxynitride gate dielectrics
US5675164A (en) 1995-06-07 1997-10-07 International Business Machines Corporation High performance multi-mesa field effect transistor
US5670389A (en) 1996-01-11 1997-09-23 Motorola, Inc. Semiconductor-on-insulator device having a laterally-graded channel region and method of making
US5698884A (en) 1996-02-07 1997-12-16 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same
JP3522441B2 (ja) 1996-03-12 2004-04-26 株式会社半導体エネルギー研究所 半導体装置
US5786618A (en) * 1996-03-21 1998-07-28 United Microelectronics, Corp. ROM memory cell with non-uniform threshold voltage
JP4014677B2 (ja) 1996-08-13 2007-11-28 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
JP3634086B2 (ja) 1996-08-13 2005-03-30 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置の作製方法
JP4059939B2 (ja) 1996-08-23 2008-03-12 株式会社半導体エネルギー研究所 パワーｍｏｓデバイス及びその作製方法
TW304278B (en) 1996-09-17 1997-05-01 Nat Science Council The source-drain distributed implantation method
US6118148A (en) 1996-11-04 2000-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JPH11233788A (ja) 1998-02-09 1999-08-27 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
KR19980018785A (ko) 1998-06-05
JPH1065164A (ja) 1998-03-06
KR100443437B1 (ko) 2004-10-14
GB9717145D0 (en) 1997-10-22
GB2316227A (en) 1998-02-18
JP3634086B2 (ja) 2005-03-30
US6653687B1 (en) 2003-11-25
GB2316227B (en) 2001-11-21

Similar Documents

Publication Publication Date Title
TW357386B (en) Insulating gate-type semiconductor and the manufacturing method
TW332924B (en) Semiconductor
TW200507255A (en) Semiconductor device and method of fabricating the same
TW353773B (en) Semiconductor device and manufacturing method
TW327240B (en) Semiconductor device and process for producing the same
TW345693B (en) LDMOS device with self-aligned RESURF region and method of fabrication
KR960014718B1 (en) Method of manufacturing transistor
TW344141B (en) An insulated gate field effect transistor having a crystalline channel region
EP0169600A3 (en) Cmos devices and method of manufacturing the same
ATE444567T1 (de) Herstellung von zweifach-gate-logikbauelementen
TW371367B (en) Method for fabricating semiconductor device
KR960012585B1 (en) Transistor structure and the method for manufacturing the same
TW331034B (en) Flash EEPROM device and manufacturing method thereof
DE69728259D1 (de) Siliciumkarbid-cmos und herstellungsverfahren
EP0045578A3 (en) Semiconductor memory device
TWI268557B (en) Semiconductor device, accumulation mode multiple-gate transistor and methods of fabricating the same
WO2000030182A3 (en) Offset drain fermi-threshold field effect transistors
WO2000030181A3 (de) Feldeffektgesteuerter transistor und verfahren zu dessen herstellung
SE9900358D0 (sv) A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor
JPS5691473A (en) Semiconductor
TW349273B (en) Fabrication method of semiconductor device containing N- and P-channel MOSFETS
EP0746037A3 (en) N-type HIGFET and method
KR970008820B1 (en) Mos fet manufacture
TW357433B (en) Semiconductor and manufacturing process
JPS57211778A (en) Mos semiconductor device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees