JP4059939B2 - パワーｍｏｓデバイス及びその作製方法 - Google Patents

パワーｍｏｓデバイス及びその作製方法 Download PDF

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Publication number
JP4059939B2
JP4059939B2 JP24125796A JP24125796A JP4059939B2 JP 4059939 B2 JP4059939 B2 JP 4059939B2 JP 24125796 A JP24125796 A JP 24125796A JP 24125796 A JP24125796 A JP 24125796A JP 4059939 B2 JP4059939 B2 JP 4059939B2
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Japan
Prior art keywords
region
impurity
power mos
channel
mos device
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Expired - Fee Related
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JP24125796A
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English (en)
Japanese (ja)
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JPH1065165A5 (enExample
JPH1065165A (ja
Inventor
舜平 山崎
健司 福永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP24125796A priority Critical patent/JP4059939B2/ja
Priority to US08/914,869 priority patent/US5952699A/en
Publication of JPH1065165A publication Critical patent/JPH1065165A/ja
Priority to US09/362,804 priority patent/US6703671B1/en
Publication of JPH1065165A5 publication Critical patent/JPH1065165A5/ja
Application granted granted Critical
Publication of JP4059939B2 publication Critical patent/JP4059939B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP24125796A 1996-08-23 1996-08-23 パワーｍｏｓデバイス及びその作製方法 Expired - Fee Related JP4059939B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP24125796A JP4059939B2 (ja) 1996-08-23 1996-08-23 パワーｍｏｓデバイス及びその作製方法
US08/914,869 US5952699A (en) 1996-08-23 1997-08-19 Insulated gate semiconductor device and method of manufacturing the same
US09/362,804 US6703671B1 (en) 1996-08-23 1999-07-28 Insulated gate semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24125796A JP4059939B2 (ja) 1996-08-23 1996-08-23 パワーｍｏｓデバイス及びその作製方法

Publications (3)

Publication Number Publication Date
JPH1065165A JPH1065165A (ja) 1998-03-06
JPH1065165A5 JPH1065165A5 (enExample) 2004-11-04
JP4059939B2 true JP4059939B2 (ja) 2008-03-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP24125796A Expired - Fee Related JP4059939B2 (ja) 1996-08-23 1996-08-23 パワーｍｏｓデバイス及びその作製方法

Country Status (2)

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US (1) US5952699A (enExample)
JP (1) JP4059939B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3634086B2 (ja) 1996-08-13 2005-03-30 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置の作製方法
US6703671B1 (en) * 1996-08-23 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US6590230B1 (en) 1996-10-15 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6118148A (en) 1996-11-04 2000-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4017706B2 (ja) 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 半導体装置
JP4282778B2 (ja) 1997-08-05 2009-06-24 株式会社半導体エネルギー研究所 半導体装置
EP0915509B1 (en) * 1997-10-24 2005-12-28 STMicroelectronics S.r.l. Process for integrating, in a same semiconductor chip, MOS technology devices with different threshold voltages
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP4236722B2 (ja) * 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH11233788A (ja) * 1998-02-09 1999-08-27 Semiconductor Energy Lab Co Ltd 半導体装置
TW507258B (en) * 2000-02-29 2002-10-21 Semiconductor Systems Corp Display device and method for fabricating the same
US7633471B2 (en) 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
DE10161125C1 (de) * 2001-12-12 2003-07-31 Infineon Technologies Ag Halbleiterbauelement mit optimierter Stromdichte
TW565937B (en) * 2002-08-22 2003-12-11 Vanguard Int Semiconduct Corp Manufacturing method of source/drain device
JP4250144B2 (ja) 2003-03-19 2009-04-08 サイスド エレクトロニクス デヴェロプメント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニ コマンディートゲゼルシャフト 高ドープのチャネル伝導領域を持つ半導体装置とその製造方法
JPWO2010110253A1 (ja) * 2009-03-27 2012-09-27 住友電気工業株式会社 Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法
US8536583B2 (en) * 2009-03-27 2013-09-17 Sumitomo Electric Industries, Ltd. MOSFET and method for manufacturing MOSFET
US9985124B2 (en) 2014-06-27 2018-05-29 Mitsubishi Electric Corporation Silicon carbide semiconductor device
CN107046059B (zh) * 2016-02-05 2020-04-21 瀚薪科技股份有限公司 碳化硅半导体元件以及其制造方法

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Publication number Priority date Publication date Assignee Title
EP0287658A1 (en) * 1986-10-27 1988-10-26 Hughes Aircraft Company Striped-channel transistor and method of forming the same
JP3194941B2 (ja) * 1990-03-19 2001-08-06 富士通株式会社 半導体装置
JP3301116B2 (ja) * 1992-07-20 2002-07-15 ソニー株式会社 半導体装置及びその製造方法
JP2848757B2 (ja) * 1993-03-19 1999-01-20 シャープ株式会社 電界効果トランジスタおよびその製造方法
US5426325A (en) * 1993-08-04 1995-06-20 Siliconix Incorporated Metal crossover in high voltage IC with graduated doping control
US5831294A (en) * 1993-09-30 1998-11-03 Sony Corporation Quantum box structure and carrier conductivity modulating device
JP3635683B2 (ja) * 1993-10-28 2005-04-06 ソニー株式会社 電界効果トランジスタ
US5516711A (en) * 1994-12-16 1996-05-14 Mosel Vitelic, Inc. Method for forming LDD CMOS with oblique implantation
US5478763A (en) * 1995-01-19 1995-12-26 United Microelectronics Corporation High performance field effect transistor and method of manufacture thereof
KR0161398B1 (ko) * 1995-03-13 1998-12-01 김광호 고내압 트랜지스터 및 그 제조방법
US5698884A (en) * 1996-02-07 1997-12-16 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same

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Publication number Publication date
JPH1065165A (ja) 1998-03-06
US5952699A (en) 1999-09-14

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