JP4104701B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4104701B2
JP4104701B2 JP18585497A JP18585497A JP4104701B2 JP 4104701 B2 JP4104701 B2 JP 4104701B2 JP 18585497 A JP18585497 A JP 18585497A JP 18585497 A JP18585497 A JP 18585497A JP 4104701 B2 JP4104701 B2 JP 4104701B2
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JP
Japan
Prior art keywords
region
pinning
drain
channel
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP18585497A
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English (en)
Japanese (ja)
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JPH1117169A (ja
JPH1117169A5 (enExample
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP18585497A priority Critical patent/JP4104701B2/ja
Priority to US09/103,473 priority patent/US6232642B1/en
Publication of JPH1117169A publication Critical patent/JPH1117169A/ja
Publication of JPH1117169A5 publication Critical patent/JPH1117169A5/ja
Application granted granted Critical
Publication of JP4104701B2 publication Critical patent/JP4104701B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP18585497A 1997-06-26 1997-06-26 半導体装置 Expired - Fee Related JP4104701B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP18585497A JP4104701B2 (ja) 1997-06-26 1997-06-26 半導体装置
US09/103,473 US6232642B1 (en) 1997-06-26 1998-06-24 Semiconductor device having impurity region locally at an end of channel formation region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18585497A JP4104701B2 (ja) 1997-06-26 1997-06-26 半導体装置

Publications (3)

Publication Number Publication Date
JPH1117169A JPH1117169A (ja) 1999-01-22
JPH1117169A5 JPH1117169A5 (enExample) 2005-03-10
JP4104701B2 true JP4104701B2 (ja) 2008-06-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP18585497A Expired - Fee Related JP4104701B2 (ja) 1997-06-26 1997-06-26 半導体装置

Country Status (2)

Country Link
US (1) US6232642B1 (enExample)
JP (1) JP4104701B2 (enExample)

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US6590230B1 (en) 1996-10-15 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4017706B2 (ja) * 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 半導体装置
US20030165888A1 (en) * 2001-07-18 2003-09-04 Brown Bob D. Oligonucleotide probes and primers comprising universal bases for diagnostic purposes
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP4236722B2 (ja) * 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1003222A1 (en) * 1998-11-19 2000-05-24 STMicroelectronics S.r.l. Improved field-effect transistor and corresponding manufacturing method
JP2001068564A (ja) * 1999-08-30 2001-03-16 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4686829B2 (ja) * 1999-09-17 2011-05-25 ソニー株式会社 半導体装置および半導体装置の製造方法
JP2001203347A (ja) 2000-01-18 2001-07-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6724037B2 (en) 2000-07-21 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
EP1233453A3 (en) * 2001-02-19 2005-03-23 Kawasaki Microelectronics, Inc. Semiconductor integrated circuit having anti-fuse, method of fabricating, and method of writing data in the same
US6921690B2 (en) * 2001-12-20 2005-07-26 Intersil Americas Inc. Method of fabricating enhanced EPROM structures with accentuated hot electron generation regions
US6566705B1 (en) 2001-12-20 2003-05-20 Intersil Americas, Inc. Enhanced EPROM structures with accentuated hot electron generation regions
US6621116B2 (en) * 2001-12-20 2003-09-16 Michael David Church Enhanced EPROM structures with accentuated hot electron generation regions
US6847065B1 (en) * 2003-04-16 2005-01-25 Raytheon Company Radiation-hardened transistor fabricated by modified CMOS process
US7141841B2 (en) 2003-07-03 2006-11-28 Micron Technology, Inc. Image sensor having a transistor for allowing increased dynamic range
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JP5555864B2 (ja) * 2009-12-22 2014-07-23 株式会社ブルックマンテクノロジ 絶縁ゲート型半導体素子及び絶縁ゲート型半導体集積回路
JP5367651B2 (ja) * 2010-06-28 2013-12-11 日立オートモティブシステムズ株式会社 電流制御用半導体素子、およびそれを用いた制御装置
JP5897910B2 (ja) 2011-01-20 2016-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8742481B2 (en) 2011-08-16 2014-06-03 Micron Technology, Inc. Apparatuses and methods comprising a channel region having different minority carrier lifetimes
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102097171B1 (ko) 2012-01-20 2020-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2016081950A (ja) * 2014-10-10 2016-05-16 ソニー株式会社 画素回路および撮像装置
US9406771B1 (en) * 2015-09-15 2016-08-02 United Microelectronics Corp. Semiconductor structure and manufacturing method thereof
CN107968123B (zh) * 2017-11-29 2019-04-16 中国电子科技集团公司第十三研究所 一种增强型场效应晶体管
US11031395B2 (en) * 2018-07-13 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming high performance MOSFETs having varying channel structures
US20250241004A1 (en) * 2024-01-18 2025-07-24 Psemi Corporation Low-Leakage NEDMOS and LDMOS Devices

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Publication number Publication date
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US6232642B1 (en) 2001-05-15

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