JPH10233365A5 - - Google Patents

Info

Publication number
JPH10233365A5
JPH10233365A5 JP1997053843A JP5384397A JPH10233365A5 JP H10233365 A5 JPH10233365 A5 JP H10233365A5 JP 1997053843 A JP1997053843 A JP 1997053843A JP 5384397 A JP5384397 A JP 5384397A JP H10233365 A5 JPH10233365 A5 JP H10233365A5
Authority
JP
Japan
Prior art keywords
film
amorphous silicon
silicon film
metal element
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997053843A
Other languages
English (en)
Japanese (ja)
Other versions
JP3983334B2 (ja
JPH10233365A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP05384397A priority Critical patent/JP3983334B2/ja
Priority claimed from JP05384397A external-priority patent/JP3983334B2/ja
Priority to US09/026,888 priority patent/US6093587A/en
Priority to KR10-1998-0005251A priority patent/KR100472159B1/ko
Publication of JPH10233365A publication Critical patent/JPH10233365A/ja
Priority to US09/621,943 priority patent/US6764928B1/en
Publication of JPH10233365A5 publication Critical patent/JPH10233365A5/ja
Application granted granted Critical
Publication of JP3983334B2 publication Critical patent/JP3983334B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP05384397A 1997-02-20 1997-02-20 半導体装置の作製方法 Expired - Fee Related JP3983334B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP05384397A JP3983334B2 (ja) 1997-02-20 1997-02-20 半導体装置の作製方法
US09/026,888 US6093587A (en) 1997-02-20 1998-02-19 Crystallization of amorphous silicon film using a metal catalyst
KR10-1998-0005251A KR100472159B1 (ko) 1997-02-20 1998-02-20 반도체장치의제작방법
US09/621,943 US6764928B1 (en) 1997-02-20 2000-07-24 Method of manufacturing an El display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05384397A JP3983334B2 (ja) 1997-02-20 1997-02-20 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH10233365A JPH10233365A (ja) 1998-09-02
JPH10233365A5 true JPH10233365A5 (enExample) 2004-12-24
JP3983334B2 JP3983334B2 (ja) 2007-09-26

Family

ID=12954069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05384397A Expired - Fee Related JP3983334B2 (ja) 1997-02-20 1997-02-20 半導体装置の作製方法

Country Status (3)

Country Link
US (1) US6093587A (enExample)
JP (1) JP3983334B2 (enExample)
KR (1) KR100472159B1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331457B1 (en) * 1997-01-24 2001-12-18 Semiconductor Energy Laboratory., Ltd. Co. Method for manufacturing a semiconductor thin film
JP3844566B2 (ja) * 1997-07-30 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3980159B2 (ja) 1998-03-05 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6312979B1 (en) * 1998-04-28 2001-11-06 Lg.Philips Lcd Co., Ltd. Method of crystallizing an amorphous silicon layer
US7294535B1 (en) 1998-07-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7153729B1 (en) * 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7282398B2 (en) * 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US7084016B1 (en) * 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6312999B1 (en) * 2001-03-29 2001-11-06 Chartered Semiconductor Manufacturing Ltd. Method for forming PLDD structure with minimized lateral dopant diffusion
US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW550648B (en) * 2001-07-02 2003-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
KR100461155B1 (ko) * 2002-02-05 2004-12-13 한국과학기술원 다결정 실리콘 박막 제조방법
US6939754B2 (en) * 2003-08-13 2005-09-06 Sharp Laboratories Of America, Inc. Isotropic polycrystalline silicon and method for producing same
US7964925B2 (en) * 2006-10-13 2011-06-21 Hewlett-Packard Development Company, L.P. Photodiode module and apparatus including multiple photodiode modules
KR20080065460A (ko) * 2007-01-09 2008-07-14 엘지전자 주식회사 수평 금속 유도 결정화를 이용한 저온 다결정 실리콘광기전력 변환소자의 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4975387A (en) * 1989-12-15 1990-12-04 The United States Of America As Represented By The Secretary Of The Navy Formation of epitaxial si-ge heterostructures by solid phase epitaxy
TW295703B (enExample) * 1993-06-25 1997-01-11 Handotai Energy Kenkyusho Kk
JP2762215B2 (ja) * 1993-08-12 1998-06-04 株式会社半導体エネルギー研究所 薄膜トランジスタおよび半導体装置の作製方法
US5869362A (en) * 1993-12-02 1999-02-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TW279275B (enExample) * 1993-12-27 1996-06-21 Sharp Kk
US5712191A (en) * 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US5915174A (en) * 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
JP3138169B2 (ja) * 1995-03-13 2001-02-26 シャープ株式会社 半導体装置の製造方法

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