JP3983334B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3983334B2
JP3983334B2 JP05384397A JP5384397A JP3983334B2 JP 3983334 B2 JP3983334 B2 JP 3983334B2 JP 05384397 A JP05384397 A JP 05384397A JP 5384397 A JP5384397 A JP 5384397A JP 3983334 B2 JP3983334 B2 JP 3983334B2
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Japan
Prior art keywords
amorphous silicon
silicon film
film
metal element
opening
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Expired - Fee Related
Application number
JP05384397A
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English (en)
Japanese (ja)
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JPH10233365A5 (enExample
JPH10233365A (ja
Inventor
久 大谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP05384397A priority Critical patent/JP3983334B2/ja
Priority to US09/026,888 priority patent/US6093587A/en
Priority to KR10-1998-0005251A priority patent/KR100472159B1/ko
Publication of JPH10233365A publication Critical patent/JPH10233365A/ja
Priority to US09/621,943 priority patent/US6764928B1/en
Publication of JPH10233365A5 publication Critical patent/JPH10233365A5/ja
Application granted granted Critical
Publication of JP3983334B2 publication Critical patent/JP3983334B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/016—Catalyst

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP05384397A 1997-02-20 1997-02-20 半導体装置の作製方法 Expired - Fee Related JP3983334B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP05384397A JP3983334B2 (ja) 1997-02-20 1997-02-20 半導体装置の作製方法
US09/026,888 US6093587A (en) 1997-02-20 1998-02-19 Crystallization of amorphous silicon film using a metal catalyst
KR10-1998-0005251A KR100472159B1 (ko) 1997-02-20 1998-02-20 반도체장치의제작방법
US09/621,943 US6764928B1 (en) 1997-02-20 2000-07-24 Method of manufacturing an El display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05384397A JP3983334B2 (ja) 1997-02-20 1997-02-20 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH10233365A JPH10233365A (ja) 1998-09-02
JPH10233365A5 JPH10233365A5 (enExample) 2004-12-24
JP3983334B2 true JP3983334B2 (ja) 2007-09-26

Family

ID=12954069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05384397A Expired - Fee Related JP3983334B2 (ja) 1997-02-20 1997-02-20 半導体装置の作製方法

Country Status (3)

Country Link
US (1) US6093587A (enExample)
JP (1) JP3983334B2 (enExample)
KR (1) KR100472159B1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331457B1 (en) * 1997-01-24 2001-12-18 Semiconductor Energy Laboratory., Ltd. Co. Method for manufacturing a semiconductor thin film
JP3844566B2 (ja) * 1997-07-30 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3980159B2 (ja) 1998-03-05 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6312979B1 (en) * 1998-04-28 2001-11-06 Lg.Philips Lcd Co., Ltd. Method of crystallizing an amorphous silicon layer
US7294535B1 (en) 1998-07-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7153729B1 (en) * 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7282398B2 (en) * 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US7084016B1 (en) * 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6312999B1 (en) * 2001-03-29 2001-11-06 Chartered Semiconductor Manufacturing Ltd. Method for forming PLDD structure with minimized lateral dopant diffusion
US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW550648B (en) * 2001-07-02 2003-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
KR100461155B1 (ko) * 2002-02-05 2004-12-13 한국과학기술원 다결정 실리콘 박막 제조방법
US6939754B2 (en) * 2003-08-13 2005-09-06 Sharp Laboratories Of America, Inc. Isotropic polycrystalline silicon and method for producing same
US7964925B2 (en) * 2006-10-13 2011-06-21 Hewlett-Packard Development Company, L.P. Photodiode module and apparatus including multiple photodiode modules
KR20080065460A (ko) * 2007-01-09 2008-07-14 엘지전자 주식회사 수평 금속 유도 결정화를 이용한 저온 다결정 실리콘광기전력 변환소자의 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4975387A (en) * 1989-12-15 1990-12-04 The United States Of America As Represented By The Secretary Of The Navy Formation of epitaxial si-ge heterostructures by solid phase epitaxy
TW295703B (enExample) * 1993-06-25 1997-01-11 Handotai Energy Kenkyusho Kk
JP2762215B2 (ja) * 1993-08-12 1998-06-04 株式会社半導体エネルギー研究所 薄膜トランジスタおよび半導体装置の作製方法
US5869362A (en) * 1993-12-02 1999-02-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TW279275B (enExample) * 1993-12-27 1996-06-21 Sharp Kk
US5712191A (en) * 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US5915174A (en) * 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
JP3138169B2 (ja) * 1995-03-13 2001-02-26 シャープ株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
KR100472159B1 (ko) 2005-07-21
US6093587A (en) 2000-07-25
JPH10233365A (ja) 1998-09-02
KR19980071529A (ko) 1998-10-26

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