JPH11233789A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH11233789A
JPH11233789A JP10048672A JP4867298A JPH11233789A JP H11233789 A JPH11233789 A JP H11233789A JP 10048672 A JP10048672 A JP 10048672A JP 4867298 A JP4867298 A JP 4867298A JP H11233789 A JPH11233789 A JP H11233789A
Authority
JP
Japan
Prior art keywords
region
semiconductor device
semiconductor
pinning
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10048672A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11233789A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP10048672A priority Critical patent/JPH11233789A/ja
Publication of JPH11233789A publication Critical patent/JPH11233789A/ja
Publication of JPH11233789A5 publication Critical patent/JPH11233789A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP10048672A 1998-02-12 1998-02-12 半導体装置 Withdrawn JPH11233789A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10048672A JPH11233789A (ja) 1998-02-12 1998-02-12 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10048672A JPH11233789A (ja) 1998-02-12 1998-02-12 半導体装置

Publications (2)

Publication Number Publication Date
JPH11233789A true JPH11233789A (ja) 1999-08-27
JPH11233789A5 JPH11233789A5 (enExample) 2005-08-18

Family

ID=12809825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10048672A Withdrawn JPH11233789A (ja) 1998-02-12 1998-02-12 半導体装置

Country Status (1)

Country Link
JP (1) JPH11233789A (enExample)

Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246580A (ja) * 2001-02-16 2002-08-30 Sharp Corp イメージセンサおよびその製造方法
US6724037B2 (en) 2000-07-21 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
JP2006286752A (ja) * 2005-03-31 2006-10-19 Sharp Corp ３次元半導体集積回路装置の製造方法および３次元半導体集積回路装置
JP2007019540A (ja) * 2006-09-20 2007-01-25 Sharp Corp イメージセンサ
JP2007294897A (ja) * 2006-03-15 2007-11-08 Marvell World Trade Ltd バルクシリコン上に１ｔ−ｄｒａｍを製造するための方法
US7312110B2 (en) 2004-04-06 2007-12-25 Samsung Electronics Co., Ltd. Methods of fabricating semiconductor devices having thin film transistors
WO2011048929A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110101333A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011058913A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2011142314A (ja) * 2009-12-11 2011-07-21 Semiconductor Energy Lab Co Ltd 半導体装置
WO2011099335A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2011216175A (ja) * 2010-02-19 2011-10-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2011258303A (ja) * 2010-05-14 2011-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012019682A (ja) * 2010-06-10 2012-01-26 Semiconductor Energy Lab Co Ltd Ｄｃｄｃコンバータ、電源回路及び半導体装置
WO2012086481A1 (ja) * 2010-12-21 2012-06-28 シャープ株式会社 半導体装置およびその製造方法
US20120161125A1 (en) * 2010-12-28 2012-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012135191A (ja) * 2010-12-03 2012-07-12 Semiconductor Energy Lab Co Ltd Ｄｃ−ｄｃコンバータ及びその作製方法
JP2012256859A (ja) * 2011-04-22 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013012730A (ja) * 2011-06-01 2013-01-17 Semiconductor Energy Lab Co Ltd 半導体装置
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
JP2014041689A (ja) * 2010-04-07 2014-03-06 Semiconductor Energy Lab Co Ltd 半導体装置
WO2014185085A1 (ja) * 2013-05-14 2014-11-20 株式会社 東芝 半導体記憶装置
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9054201B2 (en) 2009-12-25 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9135958B2 (en) 2009-11-20 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9136280B2 (en) 2010-01-15 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9240488B2 (en) 2009-12-18 2016-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2017022397A (ja) * 2010-05-21 2017-01-26 株式会社半導体エネルギー研究所 半導体装置
JP2017028321A (ja) * 2009-12-11 2017-02-02 株式会社半導体エネルギー研究所 半導体装置
JP2017059291A (ja) * 2010-12-28 2017-03-23 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP2017163152A (ja) * 2011-01-26 2017-09-14 株式会社半導体エネルギー研究所 半導体装置
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
US9922692B2 (en) 2014-03-13 2018-03-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including refresh circuit for memory cell
JP2019003718A (ja) * 2011-04-08 2019-01-10 株式会社半導体エネルギー研究所 半導体装置
US10217736B2 (en) 2013-09-23 2019-02-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and capacitor
US10236287B2 (en) 2013-09-23 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor electrically surrounded by electric field of conductive film
US10490553B2 (en) 2009-10-29 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10522693B2 (en) 2015-01-16 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
JPWO2020262643A1 (enExample) * 2019-06-26 2020-12-30
JP2022060338A (ja) * 2011-01-28 2022-04-14 株式会社半導体エネルギー研究所 半導体装置

Cited By (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724037B2 (en) 2000-07-21 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
US6885059B2 (en) 2000-07-21 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
JP2002246580A (ja) * 2001-02-16 2002-08-30 Sharp Corp イメージセンサおよびその製造方法
US7312110B2 (en) 2004-04-06 2007-12-25 Samsung Electronics Co., Ltd. Methods of fabricating semiconductor devices having thin film transistors
JP2006286752A (ja) * 2005-03-31 2006-10-19 Sharp Corp ３次元半導体集積回路装置の製造方法および３次元半導体集積回路装置
JP2007294897A (ja) * 2006-03-15 2007-11-08 Marvell World Trade Ltd バルクシリコン上に１ｔ−ｄｒａｍを製造するための方法
JP2007019540A (ja) * 2006-09-20 2007-01-25 Sharp Corp イメージセンサ
WO2011048929A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102598248A (zh) * 2009-10-21 2012-07-18 株式会社半导体能源研究所 半导体器件
JP2015201667A (ja) * 2009-10-21 2015-11-12 株式会社半導体エネルギー研究所 半導体装置
EP2491585A4 (en) * 2009-10-21 2015-09-02 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
KR20140036335A (ko) * 2009-10-21 2014-03-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2013243397A (ja) * 2009-10-21 2013-12-05 Semiconductor Energy Lab Co Ltd 半導体装置
US10490553B2 (en) 2009-10-29 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110101333A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2020017748A (ja) * 2009-10-30 2020-01-30 株式会社半導体エネルギー研究所 半導体装置
JP2017063209A (ja) * 2009-10-30 2017-03-30 株式会社半導体エネルギー研究所 半導体装置
WO2011058913A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9257449B2 (en) 2009-11-13 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9705005B2 (en) 2009-11-20 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9135958B2 (en) 2009-11-20 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8901559B2 (en) 2009-12-11 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having inverter circuit with terminal electrically connected to transistor that includes oxide semiconductor material
US9508742B2 (en) 2009-12-11 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having switching transistor that includes oxide semiconductor material
US9209251B2 (en) 2009-12-11 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having switching transistor that includes oxide semiconductor material
TWI664630B (zh) * 2009-12-11 2019-07-01 日商半導體能源研究所股份有限公司 非揮發性閂鎖電路及邏輯電路及使用其之半導體裝置
JP2022040264A (ja) * 2009-12-11 2022-03-10 株式会社半導体エネルギー研究所 半導体装置
JP2018182332A (ja) * 2009-12-11 2018-11-15 株式会社半導体エネルギー研究所 半導体装置
JP2017028321A (ja) * 2009-12-11 2017-02-02 株式会社半導体エネルギー研究所 半導体装置
US10382016B2 (en) 2009-12-11 2019-08-13 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
CN104600105A (zh) * 2009-12-11 2015-05-06 株式会社半导体能源研究所 半导体装置
US9893204B2 (en) 2009-12-11 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transistor including two oxide semiconductor layers having different lattice constants
JP2015111715A (ja) * 2009-12-11 2015-06-18 株式会社半導体エネルギー研究所 半導体装置
JP2011142314A (ja) * 2009-12-11 2011-07-21 Semiconductor Energy Lab Co Ltd 半導体装置
US9378980B2 (en) 2009-12-18 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10453964B2 (en) 2009-12-18 2019-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9240488B2 (en) 2009-12-18 2016-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9728651B2 (en) 2009-12-18 2017-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10083996B2 (en) 2009-12-25 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11676975B2 (en) 2009-12-25 2023-06-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9054201B2 (en) 2009-12-25 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12426374B2 (en) 2009-12-25 2025-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12426373B2 (en) 2009-12-25 2025-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9136280B2 (en) 2010-01-15 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
WO2011099335A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2011216175A (ja) * 2010-02-19 2011-10-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2014041689A (ja) * 2010-04-07 2014-03-06 Semiconductor Energy Lab Co Ltd 半導体装置
JP2011258303A (ja) * 2010-05-14 2011-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
US9007813B2 (en) 2010-05-14 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2017022397A (ja) * 2010-05-21 2017-01-26 株式会社半導体エネルギー研究所 半導体装置
US9787294B2 (en) 2010-05-21 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Pulse converter circuit
US9543835B2 (en) 2010-06-10 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. DC/DC converter, power supply circuit, and semiconductor device
JP2012019682A (ja) * 2010-06-10 2012-01-26 Semiconductor Energy Lab Co Ltd Ｄｃｄｃコンバータ、電源回路及び半導体装置
JP2012135191A (ja) * 2010-12-03 2012-07-12 Semiconductor Energy Lab Co Ltd Ｄｃ−ｄｃコンバータ及びその作製方法
US9224757B2 (en) 2010-12-03 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter and manufacturing method thereof
WO2012086481A1 (ja) * 2010-12-21 2012-06-28 シャープ株式会社 半導体装置およびその製造方法
US9443984B2 (en) * 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2017059291A (ja) * 2010-12-28 2017-03-23 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US10714625B2 (en) 2010-12-28 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11430896B2 (en) 2010-12-28 2022-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20120161125A1 (en) * 2010-12-28 2012-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2017163152A (ja) * 2011-01-26 2017-09-14 株式会社半導体エネルギー研究所 半導体装置
JP2022060338A (ja) * 2011-01-28 2022-04-14 株式会社半導体エネルギー研究所 半導体装置
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9490351B2 (en) 2011-03-25 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP2019003718A (ja) * 2011-04-08 2019-01-10 株式会社半導体エネルギー研究所 半導体装置
JP2012256859A (ja) * 2011-04-22 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
US10504920B2 (en) 2011-06-01 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2017108168A (ja) * 2011-06-01 2017-06-15 株式会社半導体エネルギー研究所 半導体装置
JP2013012730A (ja) * 2011-06-01 2013-01-17 Semiconductor Energy Lab Co Ltd 半導体装置
WO2014185085A1 (ja) * 2013-05-14 2014-11-20 株式会社 東芝 半導体記憶装置
US10236287B2 (en) 2013-09-23 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor electrically surrounded by electric field of conductive film
US10217736B2 (en) 2013-09-23 2019-02-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and capacitor
US9922692B2 (en) 2014-03-13 2018-03-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including refresh circuit for memory cell
US10522693B2 (en) 2015-01-16 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
JPWO2020262643A1 (enExample) * 2019-06-26 2020-12-30
WO2020262643A1 (ja) * 2019-06-26 2020-12-30 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
US12136640B2 (en) 2019-06-26 2024-11-05 Sony Semiconductor Solutions Corporation Solid-state imaging device

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