JP2012135191A - Dc−dcコンバータ及びその作製方法 - Google Patents
Dc−dcコンバータ及びその作製方法 Download PDFInfo
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- JP2012135191A JP2012135191A JP2011258830A JP2011258830A JP2012135191A JP 2012135191 A JP2012135191 A JP 2012135191A JP 2011258830 A JP2011258830 A JP 2011258830A JP 2011258830 A JP2011258830 A JP 2011258830A JP 2012135191 A JP2012135191 A JP 2012135191A
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- Prior art keywords
- oxide semiconductor
- transistor
- film
- based oxide
- conversion circuit
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Images
Classifications
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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Abstract
【解決手段】入力電圧が印加される入力端子と、入力端子と接続され第1のトランジスタを有する電圧変換回路と、電圧変換回路を制御し珪素材料をチャネル形成領域に有する第2のトランジスタを有する制御回路と、入力端子と制御回路との間に設けられ入力電圧を入力電圧より低い電圧である電源電圧に変換する第3のトランジスタとを有し、第1のトランジスタ及び第3のトランジスタは酸化物半導体材料をチャネル形成領域に有するトランジスタであり、第2のトランジスタ、並びに、第1のトランジスタ及び第3のトランジスタは、絶縁膜を介して積層されているDC−DCコンバータ及びその作製に関する。
【選択図】図1
Description
図1に示すDC−DCコンバータは、制御回路111、電圧変換回路121、入力電圧Vinが印加される入力端子102、酸化物半導体材料をチャネル形成領域に用いたトランジスタ、例えば、酸化物半導体膜をチャネル形成領域に有するトランジスタ(以下、酸化物半導体トランジスタと呼ぶ)であるトランジスタ101、電圧変換回路121から出力される出力電圧Voutを出力する出力端子131を有する。
ここで、オペアンプ112を構成するトランジスタ、及び、酸化物半導体トランジスタであるトランジスタ101を積層した積層構造、並びに、当該積層構造の作製工程を、以下に説明する。なお本実施の形態では、オペアンプ112を構成するトランジスタとして、珪素材料をチャネル形成領域に用いたトランジスタを用いる。
102 入力端子
110 内部電圧生成回路
111 制御回路
112 オペアンプ
113 抵抗
114 抵抗
115 端子
121 電圧変換回路
122 コイル
123 ダイオード
124 トランジスタ
125 コンデンサ
130 内部制御回路
131 出力端子
141 電圧変換回路
142 コイル
143 ダイオード
144 トランジスタ
145 コンデンサ
146 コイル
149 トランス
151 電圧変換回路
152 コイル
153 ダイオード
154 トランジスタ
155 コンデンサ
156 コイル
157 ダイオード
158 コイル
159 トランス
700 基板
701 絶縁膜
702 半導体膜
703 半導体膜
704 nチャネル型トランジスタ
705 pチャネル型トランジスタ
706 ゲート電極
707 ゲート電極
708 絶縁膜
711 配線
712 絶縁膜
713 ゲート電極
714 ゲート絶縁膜
715 酸化物半導体膜
716 電極
717 電極
718 電極
719 電極
720 電極
723 絶縁膜
724 酸化物半導体トランジスタ
725 酸化物半導体トランジスタ
726 酸化物半導体トランジスタ
730 ゲート電極
731 ゲート絶縁膜
732 酸化物半導体膜
733 チャネル保護膜
734 電極
735 電極
736 絶縁膜
741 ゲート電極
742 ゲート絶縁膜
743 電極
744 電極
745 酸化物半導体膜
746 絶縁膜
750 ゲート電極
751 酸化物半導体トランジスタ
752 酸化物半導体膜
753 チャネル保護膜
754 電極
755 電極
760 酸化物半導体トランジスタ
761 ゲート電極
763 電極
764 電極
765 酸化物半導体膜
773 ゲート電極
775 酸化物半導体膜
779 電極
780 電極
781 酸化物半導体トランジスタ
Claims (10)
- 入力電圧が印加される入力端子と、
前記入力端子と接続され、第1のトランジスタを有する電圧変換回路と、
前記電圧変換回路を制御し、珪素材料をチャネル形成領域に有する第2のトランジスタを有する制御回路と、
前記入力端子と前記制御回路との間に設けられ、前記入力電圧を前記入力電圧より低い電圧である電源電圧に変換する第3のトランジスタと、
を有し、
前記第1のトランジスタ及び前記第3のトランジスタは、酸化物半導体材料をチャネル形成領域に有するトランジスタであり、
前記第2のトランジスタ、並びに、前記第1のトランジスタ及び前記第3のトランジスタは、絶縁膜を介して積層されていることを特徴とするDC−DCコンバータ。 - 請求項1において、
前記酸化物半導体材料は、四元系金属の酸化物であるIn−Sn−Ga−Zn−O系酸化物半導体、三元系金属の酸化物であるIn−Ga−Zn−O系酸化物半導体、In−Sn−Zn−O系酸化物半導体、In−Al−Zn−O系酸化物半導体、Sn−Ga−Zn−O系酸化物半導体、Al−Ga−Zn−O系酸化物半導体、Sn−Al−Zn−O系酸化物半導体、二元系金属の酸化物であるIn−Zn−O系酸化物半導体、Sn−Zn−O系酸化物半導体、Al−Zn−O系酸化物半導体、Zn−Mg−O系酸化物半導体、Sn−Mg−O系酸化物半導体、In−Mg−O系酸化物半導体、In−Ga−O系酸化物半導体、一元系金属の酸化物であるIn−O系酸化物半導体、Sn−O系酸化物半導体、Zn−O系酸化物半導体のいずれかであることを特徴とするDC−DCコンバータ。 - 請求項1又は請求項2において、
前記電圧変換回路は、降圧型の電圧変換回路であることを特徴とするDC−DCコンバータ。 - 請求項1又は請求項2において、
前記電圧変換回路は、フライバック型の電圧変換回路であることを特徴とするDC−DCコンバータ。 - 請求項1又は請求項2において、
前記電圧変換回路は、フォワード型の電圧変換回路であることを特徴とするDC−DCコンバータ。 - 絶縁表面上に、珪素材料を第1のチャネル形成領域に用いた第1のトランジスタを形成し、
前記第1のトランジスタを覆って、絶縁膜を形成し、
前記絶縁膜上に、酸化物半導体材料を第2のチャネル形成領域として用いた第2のトランジスタ、及び前記酸化物半導体材料を第3のチャネル形成領域として用いた第3のトランジスタを形成し、
前記第2のトランジスタは電圧変換回路を構成し、
前記第1のトランジスタは、前記電圧変換回路を制御する制御回路を構成し、
前記第3のトランジスタは、入力端子と前記制御回路との間に設けられ、前記入力端子に印加される入力電圧を前記入力電圧より低い電圧である電源電圧に変換することを特徴とするDC−DCコンバータの作製方法。 - 請求項6において、
前記酸化物半導体材料は、四元系金属の酸化物であるIn−Sn−Ga−Zn−O系酸化物半導体、三元系金属の酸化物であるIn−Ga−Zn−O系酸化物半導体、In−Sn−Zn−O系酸化物半導体、In−Al−Zn−O系酸化物半導体、Sn−Ga−Zn−O系酸化物半導体、Al−Ga−Zn−O系酸化物半導体、Sn−Al−Zn−O系酸化物半導体、二元系金属の酸化物であるIn−Zn−O系酸化物半導体、Sn−Zn−O系酸化物半導体、Al−Zn−O系酸化物半導体、Zn−Mg−O系酸化物半導体、Sn−Mg−O系酸化物半導体、In−Mg−O系酸化物半導体、In−Ga−O系酸化物半導体、一元系金属の酸化物であるIn−O系酸化物半導体、Sn−O系酸化物半導体、Zn−O系酸化物半導体のいずれかであることを特徴とするDC−DCコンバータの作製方法。 - 請求項6又は請求項7において、
前記電圧変換回路は、降圧型の電圧変換回路であることを特徴とするDC−DCコンバータの作製方法。 - 請求項6又は請求項7において、
前記電圧変換回路は、フライバック型の電圧変換回路であることを特徴とするDC−DCコンバータの作製方法。 - 請求項6又は請求項7において、
前記電圧変換回路は、フォワード型の電圧変換回路であることを特徴とするDC−DCコンバータの作製方法。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11233789A (ja) * | 1998-02-12 | 1999-08-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2009094495A (ja) * | 2007-09-21 | 2009-04-30 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2009131062A (ja) * | 2007-11-26 | 2009-06-11 | Ricoh Co Ltd | 降圧型スイッチングレギュレータ |
WO2010134234A1 (ja) * | 2009-05-19 | 2010-11-25 | パナソニック株式会社 | フレキシブル半導体装置の製造方法 |
Family Cites Families (133)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH07254706A (ja) * | 1993-11-29 | 1995-10-03 | Texas Instr Inc <Ti> | 高電圧デバイス構造およびその製造方法 |
US5627460A (en) * | 1994-12-28 | 1997-05-06 | Unitrode Corporation | DC/DC converter having a bootstrapped high side driver |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
KR100394896B1 (ko) | 1995-08-03 | 2003-11-28 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 투명스위칭소자를포함하는반도체장치 |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
EP1443130B1 (en) | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4066231B2 (ja) | 2002-02-08 | 2008-03-26 | ローム株式会社 | スイッチングレギュレータ |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
EP1737044B1 (en) * | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP4872197B2 (ja) * | 2004-08-25 | 2012-02-08 | カシオ計算機株式会社 | 薄膜トランジスタパネル及びその製造方法 |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
EP1812969B1 (en) | 2004-11-10 | 2015-05-06 | Canon Kabushiki Kaisha | Field effect transistor comprising an amorphous oxide |
US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
CN101057333B (zh) | 2004-11-10 | 2011-11-16 | 佳能株式会社 | 发光器件 |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI562380B (en) | 2005-01-28 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5116225B2 (ja) * | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP5006598B2 (ja) * | 2005-09-16 | 2012-08-22 | キヤノン株式会社 | 電界効果型トランジスタ |
EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
US8218275B2 (en) * | 2005-10-21 | 2012-07-10 | Nxp B.V. | ESD protection for pass-transistors in a voltage regulator |
KR101117948B1 (ko) | 2005-11-15 | 2012-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 제조 방법 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
JP2007251100A (ja) * | 2006-03-20 | 2007-09-27 | Epson Imaging Devices Corp | 電気光学装置、電子機器および半導体装置 |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
JP5197058B2 (ja) * | 2007-04-09 | 2013-05-15 | キヤノン株式会社 | 発光装置とその作製方法 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
US8274078B2 (en) | 2007-04-25 | 2012-09-25 | Canon Kabushiki Kaisha | Metal oxynitride semiconductor containing zinc |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US8354674B2 (en) * | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
US8232598B2 (en) * | 2007-09-20 | 2012-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
JP5430846B2 (ja) | 2007-12-03 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5215158B2 (ja) * | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
JP5160210B2 (ja) | 2007-12-18 | 2013-03-13 | ルネサスエレクトロニクス株式会社 | Dc−dcコンバータ駆動回路 |
JP2009158528A (ja) | 2007-12-25 | 2009-07-16 | Sharp Corp | 半導体装置 |
JP2009260215A (ja) * | 2008-03-25 | 2009-11-05 | Toshiba Corp | 半導体装置 |
JP5157603B2 (ja) | 2008-04-04 | 2013-03-06 | ミツミ電機株式会社 | 昇圧型dc−dcコンバータおよび電源駆動用半導体集積回路 |
TW200950296A (en) * | 2008-05-20 | 2009-12-01 | Acbel Polytech Inc | Switched power supply capable of raising light-load efficiency |
JP2010003910A (ja) * | 2008-06-20 | 2010-01-07 | Toshiba Mobile Display Co Ltd | 表示素子 |
JP5627071B2 (ja) * | 2008-09-01 | 2014-11-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
KR101435501B1 (ko) * | 2008-10-03 | 2014-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP5781720B2 (ja) * | 2008-12-15 | 2015-09-24 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
CN101840936B (zh) | 2009-02-13 | 2014-10-08 | 株式会社半导体能源研究所 | 包括晶体管的半导体装置及其制造方法 |
US8338226B2 (en) * | 2009-04-02 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
TWI489628B (zh) * | 2009-04-02 | 2015-06-21 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
TWI430441B (zh) * | 2009-04-07 | 2014-03-11 | Innolux Corp | 影像顯示系統及其製造方法 |
US8441047B2 (en) * | 2009-04-10 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5760298B2 (ja) * | 2009-05-21 | 2015-08-05 | ソニー株式会社 | 薄膜トランジスタ、表示装置、および電子機器 |
KR101591613B1 (ko) | 2009-10-21 | 2016-02-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20190006091A (ko) | 2009-10-29 | 2019-01-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
CN105070717B (zh) | 2009-10-30 | 2019-01-01 | 株式会社半导体能源研究所 | 半导体装置 |
WO2011155295A1 (en) | 2010-06-10 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Dc/dc converter, power supply circuit, and semiconductor device |
WO2012026337A1 (en) | 2010-08-26 | 2012-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Dc-dc converter and semiconductor device |
US8704504B2 (en) | 2010-09-03 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Power supply circuit comprising detection circuit including reference voltage circuits as reference voltage generation circuits |
US9362820B2 (en) | 2010-10-07 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | DCDC converter, semiconductor device, and power generation device |
-
2011
- 2011-11-28 JP JP2011258830A patent/JP5908263B2/ja active Active
- 2011-11-29 KR KR1020110125959A patent/KR101855713B1/ko active IP Right Grant
- 2011-11-30 US US13/307,084 patent/US9224757B2/en not_active Expired - Fee Related
- 2011-12-01 TW TW100144210A patent/TWI548188B/zh active
-
2016
- 2016-03-23 JP JP2016057880A patent/JP6243945B2/ja active Active
-
2017
- 2017-11-10 JP JP2017216899A patent/JP6501852B2/ja active Active
-
2019
- 2019-03-19 JP JP2019051681A patent/JP6876736B2/ja active Active
-
2021
- 2021-04-26 JP JP2021074278A patent/JP7179901B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11233789A (ja) * | 1998-02-12 | 1999-08-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2009094495A (ja) * | 2007-09-21 | 2009-04-30 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2009131062A (ja) * | 2007-11-26 | 2009-06-11 | Ricoh Co Ltd | 降圧型スイッチングレギュレータ |
WO2010134234A1 (ja) * | 2009-05-19 | 2010-11-25 | パナソニック株式会社 | フレキシブル半導体装置の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012019682A (ja) * | 2010-06-10 | 2012-01-26 | Semiconductor Energy Lab Co Ltd | Dcdcコンバータ、電源回路及び半導体装置 |
US9543835B2 (en) | 2010-06-10 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | DC/DC converter, power supply circuit, and semiconductor device |
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JP6243945B2 (ja) | 2017-12-06 |
KR20120061744A (ko) | 2012-06-13 |
JP2016149565A (ja) | 2016-08-18 |
JP2021114629A (ja) | 2021-08-05 |
US20120140523A1 (en) | 2012-06-07 |
US9224757B2 (en) | 2015-12-29 |
JP2019149930A (ja) | 2019-09-05 |
JP6501852B2 (ja) | 2019-04-17 |
TW201233026A (en) | 2012-08-01 |
JP7179901B2 (ja) | 2022-11-29 |
JP6876736B2 (ja) | 2021-05-26 |
TWI548188B (zh) | 2016-09-01 |
JP5908263B2 (ja) | 2016-04-26 |
JP2018050067A (ja) | 2018-03-29 |
KR101855713B1 (ko) | 2018-05-10 |
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