JPH10200112A5 - - Google Patents

Info

Publication number
JPH10200112A5
JPH10200112A5 JP1996358953A JP35895396A JPH10200112A5 JP H10200112 A5 JPH10200112 A5 JP H10200112A5 JP 1996358953 A JP1996358953 A JP 1996358953A JP 35895396 A JP35895396 A JP 35895396A JP H10200112 A5 JPH10200112 A5 JP H10200112A5
Authority
JP
Japan
Prior art keywords
thin film
film transistor
active layer
analog switch
doped region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996358953A
Other languages
English (en)
Japanese (ja)
Other versions
JP3645387B2 (ja
JPH10200112A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP35895396A priority Critical patent/JP3645387B2/ja
Priority claimed from JP35895396A external-priority patent/JP3645387B2/ja
Priority to US08/998,969 priority patent/US6124602A/en
Publication of JPH10200112A publication Critical patent/JPH10200112A/ja
Publication of JPH10200112A5 publication Critical patent/JPH10200112A5/ja
Application granted granted Critical
Publication of JP3645387B2 publication Critical patent/JP3645387B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP35895396A 1996-12-30 1996-12-30 半導体回路 Expired - Fee Related JP3645387B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP35895396A JP3645387B2 (ja) 1996-12-30 1996-12-30 半導体回路
US08/998,969 US6124602A (en) 1996-12-30 1997-12-29 Semiconductor circuit having a crystal growth in an active layer where a specific distance is established between a selected portion and where the growth starts to the active layer of the circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35895396A JP3645387B2 (ja) 1996-12-30 1996-12-30 半導体回路

Publications (3)

Publication Number Publication Date
JPH10200112A JPH10200112A (ja) 1998-07-31
JPH10200112A5 true JPH10200112A5 (enExample) 2004-12-09
JP3645387B2 JP3645387B2 (ja) 2005-05-11

Family

ID=18461971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35895396A Expired - Fee Related JP3645387B2 (ja) 1996-12-30 1996-12-30 半導体回路

Country Status (2)

Country Link
US (1) US6124602A (enExample)
JP (1) JP3645387B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
JP4689150B2 (ja) * 2002-03-26 2011-05-25 株式会社半導体エネルギー研究所 半導体回路及びその作製方法
US6930326B2 (en) 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
US20120104402A1 (en) * 2010-11-03 2012-05-03 Pei-Hua Chen Architecture of analog buffer circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JP3450376B2 (ja) * 1993-06-12 2003-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3277082B2 (ja) * 1994-11-22 2002-04-22 シャープ株式会社 半導体装置およびその製造方法

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