JPH11307783A5 - - Google Patents

Info

Publication number
JPH11307783A5
JPH11307783A5 JP1999037490A JP3749099A JPH11307783A5 JP H11307783 A5 JPH11307783 A5 JP H11307783A5 JP 1999037490 A JP1999037490 A JP 1999037490A JP 3749099 A JP3749099 A JP 3749099A JP H11307783 A5 JPH11307783 A5 JP H11307783A5
Authority
JP
Japan
Prior art keywords
heat treatment
amorphous silicon
film
group
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999037490A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11307783A (ja
JP4489201B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP03749099A priority Critical patent/JP4489201B2/ja
Priority claimed from JP03749099A external-priority patent/JP4489201B2/ja
Publication of JPH11307783A publication Critical patent/JPH11307783A/ja
Publication of JPH11307783A5 publication Critical patent/JPH11307783A5/ja
Application granted granted Critical
Publication of JP4489201B2 publication Critical patent/JP4489201B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP03749099A 1998-02-18 1999-02-16 半導体装置の作製方法 Expired - Fee Related JP4489201B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03749099A JP4489201B2 (ja) 1998-02-18 1999-02-16 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5285198 1998-02-18
JP10-52851 1998-02-18
JP03749099A JP4489201B2 (ja) 1998-02-18 1999-02-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH11307783A JPH11307783A (ja) 1999-11-05
JPH11307783A5 true JPH11307783A5 (enExample) 2006-03-23
JP4489201B2 JP4489201B2 (ja) 2010-06-23

Family

ID=26376618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03749099A Expired - Fee Related JP4489201B2 (ja) 1998-02-18 1999-02-16 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4489201B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6812493B2 (en) 2000-04-04 2004-11-02 Matsushita Electric Industrial Co., Ltd. Thin-film semiconductor element and method of producing same
TWI263336B (en) 2000-06-12 2006-10-01 Semiconductor Energy Lab Thin film transistors and semiconductor device
JP2002083974A (ja) 2000-06-19 2002-03-22 Semiconductor Energy Lab Co Ltd 半導体装置
US6828587B2 (en) 2000-06-19 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6703265B2 (en) 2000-08-02 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP7213726B2 (ja) * 2019-03-13 2023-01-27 東京エレクトロン株式会社 成膜方法及び熱処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3450376B2 (ja) * 1993-06-12 2003-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH09148245A (ja) * 1995-11-17 1997-06-06 Sharp Corp 半導体装置およびその製造方法

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