JP4489201B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4489201B2
JP4489201B2 JP03749099A JP3749099A JP4489201B2 JP 4489201 B2 JP4489201 B2 JP 4489201B2 JP 03749099 A JP03749099 A JP 03749099A JP 3749099 A JP3749099 A JP 3749099A JP 4489201 B2 JP4489201 B2 JP 4489201B2
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Japan
Prior art keywords
film
heat treatment
germanium
polysilicon film
amorphous silicon
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Expired - Fee Related
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JP03749099A
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English (en)
Japanese (ja)
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JPH11307783A (ja
JPH11307783A5 (enExample
Inventor
舜平 山崎
久 大谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP03749099A priority Critical patent/JP4489201B2/ja
Publication of JPH11307783A publication Critical patent/JPH11307783A/ja
Publication of JPH11307783A5 publication Critical patent/JPH11307783A5/ja
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Publication of JP4489201B2 publication Critical patent/JP4489201B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP03749099A 1998-02-18 1999-02-16 半導体装置の作製方法 Expired - Fee Related JP4489201B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03749099A JP4489201B2 (ja) 1998-02-18 1999-02-16 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5285198 1998-02-18
JP10-52851 1998-02-18
JP03749099A JP4489201B2 (ja) 1998-02-18 1999-02-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH11307783A JPH11307783A (ja) 1999-11-05
JPH11307783A5 JPH11307783A5 (enExample) 2006-03-23
JP4489201B2 true JP4489201B2 (ja) 2010-06-23

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Family Applications (1)

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JP03749099A Expired - Fee Related JP4489201B2 (ja) 1998-02-18 1999-02-16 半導体装置の作製方法

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JP (1) JP4489201B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6812493B2 (en) 2000-04-04 2004-11-02 Matsushita Electric Industrial Co., Ltd. Thin-film semiconductor element and method of producing same
TWI263336B (en) 2000-06-12 2006-10-01 Semiconductor Energy Lab Thin film transistors and semiconductor device
JP2002083974A (ja) 2000-06-19 2002-03-22 Semiconductor Energy Lab Co Ltd 半導体装置
US6828587B2 (en) 2000-06-19 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6703265B2 (en) 2000-08-02 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP7213726B2 (ja) * 2019-03-13 2023-01-27 東京エレクトロン株式会社 成膜方法及び熱処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3450376B2 (ja) * 1993-06-12 2003-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH09148245A (ja) * 1995-11-17 1997-06-06 Sharp Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH11307783A (ja) 1999-11-05

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