JPH09289165A5 - - Google Patents
Info
- Publication number
- JPH09289165A5 JPH09289165A5 JP1996336338A JP33633896A JPH09289165A5 JP H09289165 A5 JPH09289165 A5 JP H09289165A5 JP 1996336338 A JP1996336338 A JP 1996336338A JP 33633896 A JP33633896 A JP 33633896A JP H09289165 A5 JPH09289165 A5 JP H09289165A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- active layer
- semiconductor device
- silicon film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8336338A JPH09289165A (ja) | 1996-02-23 | 1996-12-02 | 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6189296 | 1996-02-23 | ||
| JP8-61891 | 1996-02-23 | ||
| JP8-61892 | 1996-02-23 | ||
| JP6189196 | 1996-02-23 | ||
| JP8336338A JPH09289165A (ja) | 1996-02-23 | 1996-12-02 | 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09289165A JPH09289165A (ja) | 1997-11-04 |
| JPH09289165A5 true JPH09289165A5 (enExample) | 2004-11-18 |
Family
ID=27297666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8336338A Withdrawn JPH09289165A (ja) | 1996-02-23 | 1996-12-02 | 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09289165A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4860021B2 (ja) * | 1999-01-11 | 2012-01-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000208771A (ja) | 1999-01-11 | 2000-07-28 | Hitachi Ltd | 半導体装置、液晶表示装置およびこれらの製造方法 |
| JP2002176180A (ja) | 2000-12-06 | 2002-06-21 | Hitachi Ltd | 薄膜半導体素子及びその製造方法 |
| CN102668062B (zh) | 2009-10-21 | 2014-12-10 | 株式会社半导体能源研究所 | 半导体器件 |
| US8415731B2 (en) * | 2010-01-20 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor storage device with integrated capacitor and having transistor overlapping sections |
-
1996
- 1996-12-02 JP JP8336338A patent/JPH09289165A/ja not_active Withdrawn
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