JPH09289165A - 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法 - Google Patents

半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

Info

Publication number
JPH09289165A
JPH09289165A JP8336338A JP33633896A JPH09289165A JP H09289165 A JPH09289165 A JP H09289165A JP 8336338 A JP8336338 A JP 8336338A JP 33633896 A JP33633896 A JP 33633896A JP H09289165 A JPH09289165 A JP H09289165A
Authority
JP
Japan
Prior art keywords
film
silicon film
substrate
region
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8336338A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09289165A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Shoji Miyanaga
昭治 宮永
Jun Koyama
潤 小山
Kenji Fukunaga
健司 福永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP8336338A priority Critical patent/JPH09289165A/ja
Publication of JPH09289165A publication Critical patent/JPH09289165A/ja
Publication of JPH09289165A5 publication Critical patent/JPH09289165A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP8336338A 1996-02-23 1996-12-02 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法 Withdrawn JPH09289165A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8336338A JPH09289165A (ja) 1996-02-23 1996-12-02 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP6189296 1996-02-23
JP8-61891 1996-02-23
JP8-61892 1996-02-23
JP6189196 1996-02-23
JP8336338A JPH09289165A (ja) 1996-02-23 1996-12-02 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JPH09289165A true JPH09289165A (ja) 1997-11-04
JPH09289165A5 JPH09289165A5 (enExample) 2004-11-18

Family

ID=27297666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8336338A Withdrawn JPH09289165A (ja) 1996-02-23 1996-12-02 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPH09289165A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269512A (ja) * 1999-01-11 2000-09-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6274888B1 (en) 1999-01-11 2001-08-14 Hitachi, Ltd Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
US6657227B2 (en) 2000-12-06 2003-12-02 Hitachi, Ltd. Transistor with thin film active region having clusters of different crystal orientation
JP2011109084A (ja) * 2009-10-21 2011-06-02 Semiconductor Energy Lab Co Ltd 半導体装置
JP2016131260A (ja) * 2010-01-20 2016-07-21 株式会社半導体エネルギー研究所 半導体装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269512A (ja) * 1999-01-11 2000-09-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6274888B1 (en) 1999-01-11 2001-08-14 Hitachi, Ltd Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
US6512247B1 (en) 1999-01-11 2003-01-28 Hitachi, Ltd. Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
US6965122B2 (en) 1999-01-11 2005-11-15 Hitachi, Ltd. Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
US7297982B2 (en) 1999-01-11 2007-11-20 Hitachi, Ltd. Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
US6657227B2 (en) 2000-12-06 2003-12-02 Hitachi, Ltd. Transistor with thin film active region having clusters of different crystal orientation
US6716688B2 (en) 2000-12-06 2004-04-06 Hitachi, Ltd. Irradiation of manufacturing a thin film transistor by laser irradiation
US7227186B2 (en) 2000-12-06 2007-06-05 Hitachi, Ltd. Thin film transistor and method of manufacturing the same
JP2011109084A (ja) * 2009-10-21 2011-06-02 Semiconductor Energy Lab Co Ltd 半導体装置
US9236385B2 (en) 2009-10-21 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9478564B2 (en) 2009-10-21 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9735285B2 (en) 2009-10-21 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10553726B2 (en) 2009-10-21 2020-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11004983B2 (en) 2009-10-21 2021-05-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2016131260A (ja) * 2010-01-20 2016-07-21 株式会社半導体エネルギー研究所 半導体装置
JP2017157846A (ja) * 2010-01-20 2017-09-07 株式会社半導体エネルギー研究所 半導体装置

Similar Documents

Publication Publication Date Title
JP3476320B2 (ja) 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法
US7812351B2 (en) Thin film semiconductor device and its manufacturing method
KR100447311B1 (ko) 반도체박막,반도체장치및이의제조방법
KR100483302B1 (ko) 반도체장치
US6524896B1 (en) Semiconductor device and method of fabricating the same
CN100388636C (zh) 半导体薄膜及其制造方法以及半导体器件及其制造方法
JP3597331B2 (ja) 半導体装置の作製方法
JPH10242476A (ja) 半導体装置の作製方法
JPH09312404A (ja) 半導体装置およびその作製方法
JPH10125927A (ja) 半導体装置およびその作製方法
JPH09289165A (ja) 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法
JP4027449B2 (ja) 半導体薄膜及び半導体装置の作製方法
CN100592480C (zh) 薄膜半导体、半导体器件以及薄膜晶体管的制造方法
JPH09289167A (ja) 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法
CN100502053C (zh) 半导体器件

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040419

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070814

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071012

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20071211

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20080109