JPH10135468A5 - - Google Patents

Info

Publication number
JPH10135468A5
JPH10135468A5 JP1996301249A JP30124996A JPH10135468A5 JP H10135468 A5 JPH10135468 A5 JP H10135468A5 JP 1996301249 A JP1996301249 A JP 1996301249A JP 30124996 A JP30124996 A JP 30124996A JP H10135468 A5 JPH10135468 A5 JP H10135468A5
Authority
JP
Japan
Prior art keywords
silicon film
heat treatment
film
active layer
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996301249A
Other languages
English (en)
Japanese (ja)
Other versions
JP3645377B2 (ja
JPH10135468A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP30124996A priority Critical patent/JP3645377B2/ja
Priority claimed from JP30124996A external-priority patent/JP3645377B2/ja
Priority to KR1019970052691A priority patent/KR100500033B1/ko
Priority to US08/951,193 priority patent/US6590230B1/en
Publication of JPH10135468A publication Critical patent/JPH10135468A/ja
Publication of JPH10135468A5 publication Critical patent/JPH10135468A5/ja
Application granted granted Critical
Publication of JP3645377B2 publication Critical patent/JP3645377B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP30124996A 1996-10-15 1996-10-24 集積回路の作製方法 Expired - Fee Related JP3645377B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP30124996A JP3645377B2 (ja) 1996-10-24 1996-10-24 集積回路の作製方法
KR1019970052691A KR100500033B1 (ko) 1996-10-15 1997-10-15 반도체장치
US08/951,193 US6590230B1 (en) 1996-10-15 1997-10-15 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30124996A JP3645377B2 (ja) 1996-10-24 1996-10-24 集積回路の作製方法

Publications (3)

Publication Number Publication Date
JPH10135468A JPH10135468A (ja) 1998-05-22
JPH10135468A5 true JPH10135468A5 (enExample) 2004-10-21
JP3645377B2 JP3645377B2 (ja) 2005-05-11

Family

ID=17894569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30124996A Expired - Fee Related JP3645377B2 (ja) 1996-10-15 1996-10-24 集積回路の作製方法

Country Status (1)

Country Link
JP (1) JP3645377B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8957424B2 (en) 1999-11-19 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Electroluminescence display device

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11160734A (ja) 1997-11-28 1999-06-18 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
JP4376979B2 (ja) 1998-01-12 2009-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6274887B1 (en) 1998-11-02 2001-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6617644B1 (en) 1998-11-09 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7141821B1 (en) 1998-11-10 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity gradient in the impurity regions and method of manufacture
US6512271B1 (en) 1998-11-16 2003-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6518594B1 (en) 1998-11-16 2003-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devices
US6909114B1 (en) 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
US6489952B1 (en) 1998-11-17 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Active matrix type semiconductor display device
US6420758B1 (en) 1998-11-17 2002-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity region overlapping a gate electrode
US6501098B2 (en) 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
US6365917B1 (en) 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2264771A3 (en) 1998-12-03 2015-04-29 Semiconductor Energy Laboratory Co., Ltd. MOS thin film transistor and method of fabricating same
US6259138B1 (en) 1998-12-18 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6545359B1 (en) 1998-12-18 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Wiring line and manufacture process thereof, and semiconductor device and manufacturing process thereof
US6524895B2 (en) 1998-12-25 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
JP4202502B2 (ja) 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
US6380558B1 (en) 1998-12-29 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP2000208771A (ja) 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
US6891236B1 (en) 1999-01-14 2005-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6531713B1 (en) 1999-03-19 2003-03-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
US6858898B1 (en) 1999-03-23 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6461899B1 (en) 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
TW490713B (en) 1999-07-22 2002-06-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW480554B (en) 1999-07-22 2002-03-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4562835B2 (ja) 1999-11-05 2010-10-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN1217417C (zh) 1999-12-10 2005-08-31 株式会社半导体能源研究所 半导体器件及其制造方法
JP2001177101A (ja) 1999-12-20 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4493779B2 (ja) 2000-01-31 2010-06-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6702407B2 (en) 2000-01-31 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Color image display device, method of driving the same, and electronic equipment
US6856307B2 (en) 2000-02-01 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and method of driving the same
TW495854B (en) 2000-03-06 2002-07-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW513753B (en) 2000-03-27 2002-12-11 Semiconductor Energy Lab Semiconductor display device and manufacturing method thereof
DE20006642U1 (de) 2000-04-11 2000-08-17 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto, Calif. Optische Vorrichtung
US7525165B2 (en) 2000-04-17 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US7078321B2 (en) * 2000-06-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TW504846B (en) 2000-06-28 2002-10-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US6562671B2 (en) 2000-09-22 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
SG138468A1 (en) 2001-02-28 2008-01-28 Semiconductor Energy Lab A method of manufacturing a semiconductor device
US6740938B2 (en) 2001-04-16 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Transistor provided with first and second gate electrodes with channel region therebetween
US6906344B2 (en) 2001-05-24 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with plural channels and corresponding plural overlapping electrodes
US6952023B2 (en) 2001-07-17 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4618948B2 (ja) 2001-08-24 2011-01-26 株式会社半導体エネルギー研究所 半導体装置の評価方法
US6700096B2 (en) 2001-10-30 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
US6962860B2 (en) 2001-11-09 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7050878B2 (en) 2001-11-22 2006-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductror fabricating apparatus
US7105048B2 (en) 2001-11-30 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
KR100967824B1 (ko) 2001-11-30 2010-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제작방법
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
EP1329946A3 (en) 2001-12-11 2005-04-06 Sel Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including a laser crystallization step
US7214573B2 (en) 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
US7135389B2 (en) 2001-12-20 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Irradiation method of laser beam
JP4141138B2 (ja) 2001-12-21 2008-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3992976B2 (ja) * 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4519400B2 (ja) * 2001-12-27 2010-08-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4011344B2 (ja) 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6933527B2 (en) 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
EP1326273B1 (en) 2001-12-28 2012-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2003204067A (ja) 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
JP4030758B2 (ja) 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6841797B2 (en) 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TW200302511A (en) 2002-01-28 2003-08-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI261358B (en) 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
KR100979926B1 (ko) 2002-03-05 2010-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체소자 및 그것을 사용한 반도체장치
US6847050B2 (en) 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
US6841434B2 (en) 2002-03-26 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6930326B2 (en) 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
US6906343B2 (en) 2002-03-26 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US6984573B2 (en) 2002-06-14 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
US6908797B2 (en) 2002-07-09 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7541614B2 (en) 2003-03-11 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
KR100623229B1 (ko) 2003-11-29 2006-09-18 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그의 제조 방법
US7572718B2 (en) 2004-04-19 2009-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2007158371A (ja) * 2007-02-02 2007-06-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8957424B2 (en) 1999-11-19 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Electroluminescence display device

Similar Documents

Publication Publication Date Title
JPH10135468A5 (enExample)
JPH10135469A5 (enExample)
KR970063787A (ko) 반도체 박막과 이의 제조 방법 및 반도체 장치와 이를 제조하는 방법
KR970063763A (ko) 반도체 박막, 반도체 장치 및 이의 제조 방법
JP2611726B2 (ja) 半導体装置の製造方法
JPH09312403A5 (enExample)
JPH09312402A5 (enExample)
TWI453912B (zh) 包含具有毗鄰於應力層之主動區之電晶體結構之電子裝置及形成該電子裝置之方法
JPH10125927A5 (enExample)
JPH10247723A (ja) 半導体装置のキャパシタの製造方法
JPH10228248A5 (enExample)
JP2000196082A (ja) 半導体素子のゲ―ト電極形成方法
JP2697645B2 (ja) 半導体装置の製造方法
JP2000183360A5 (ja) 半導体装置の作製方法
JPH10125926A5 (enExample)
JP2003100633A (ja) 半導体装置の製造方法および半導体装置
JP2001024165A5 (enExample)
JP2004022900A5 (enExample)
JP2658847B2 (ja) 半導体装置の製造方法
JP2001036078A5 (enExample)
JPH11284198A5 (ja) 半導体装置の作製方法
JP2727434B2 (ja) キャパシタの製造方法
JPH09289167A5 (enExample)
JPH1187733A5 (enExample)
JPH09289168A5 (enExample)