JPH09289168A5 - - Google Patents

Info

Publication number
JPH09289168A5
JPH09289168A5 JP1996336341A JP33634196A JPH09289168A5 JP H09289168 A5 JPH09289168 A5 JP H09289168A5 JP 1996336341 A JP1996336341 A JP 1996336341A JP 33634196 A JP33634196 A JP 33634196A JP H09289168 A5 JPH09289168 A5 JP H09289168A5
Authority
JP
Japan
Prior art keywords
film
oxide film
active layer
thin film
semiconductor thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996336341A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09289168A (ja
JP4027449B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP33634196A priority Critical patent/JP4027449B2/ja
Priority claimed from JP33634196A external-priority patent/JP4027449B2/ja
Publication of JPH09289168A publication Critical patent/JPH09289168A/ja
Publication of JPH09289168A5 publication Critical patent/JPH09289168A5/ja
Application granted granted Critical
Publication of JP4027449B2 publication Critical patent/JP4027449B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP33634196A 1996-02-23 1996-12-02 半導体薄膜及び半導体装置の作製方法 Expired - Fee Related JP4027449B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33634196A JP4027449B2 (ja) 1996-02-23 1996-12-02 半導体薄膜及び半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP6189896 1996-02-23
JP6189796 1996-02-23
JP8-61898 1996-02-23
JP8-61897 1996-02-23
JP33634196A JP4027449B2 (ja) 1996-02-23 1996-12-02 半導体薄膜及び半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH09289168A JPH09289168A (ja) 1997-11-04
JPH09289168A5 true JPH09289168A5 (enExample) 2004-11-18
JP4027449B2 JP4027449B2 (ja) 2007-12-26

Family

ID=27297673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33634196A Expired - Fee Related JP4027449B2 (ja) 1996-02-23 1996-12-02 半導体薄膜及び半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4027449B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5063640B2 (ja) * 2009-04-27 2012-10-31 株式会社半導体エネルギー研究所 半導体装置
TWI541981B (zh) * 2010-11-12 2016-07-11 半導體能源研究所股份有限公司 半導體裝置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02143417A (ja) * 1988-11-24 1990-06-01 Sharp Corp 半導体装置の製造方法
JPH06132218A (ja) * 1992-10-15 1994-05-13 Sony Corp 半導体結晶の成長方法及びｍｏｓ型トランジスタの作製方法
JP2649325B2 (ja) * 1993-07-30 1997-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3041177B2 (ja) * 1993-12-27 2000-05-15 シャープ株式会社 半導体装置の製造方法
JP3229750B2 (ja) * 1994-02-22 2001-11-19 三洋電機株式会社 多結晶半導体膜、それを用いた半導体装置及び太陽電池
JP3216861B2 (ja) * 1995-04-10 2001-10-09 シャープ株式会社 多結晶シリコン膜の形成方法および薄膜トランジスタの製造方法
JP3476320B2 (ja) * 1996-02-23 2003-12-10 株式会社半導体エネルギー研究所 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

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