JPH10135469A5 - - Google Patents

Info

Publication number
JPH10135469A5
JPH10135469A5 JP1996301250A JP30125096A JPH10135469A5 JP H10135469 A5 JPH10135469 A5 JP H10135469A5 JP 1996301250 A JP1996301250 A JP 1996301250A JP 30125096 A JP30125096 A JP 30125096A JP H10135469 A5 JPH10135469 A5 JP H10135469A5
Authority
JP
Japan
Prior art keywords
silicon film
amorphous silicon
forming
film
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996301250A
Other languages
English (en)
Japanese (ja)
Other versions
JP3597331B2 (ja
JPH10135469A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP30125096A external-priority patent/JP3597331B2/ja
Priority to JP30125096A priority Critical patent/JP3597331B2/ja
Priority to TW086114475A priority patent/TW451284B/zh
Priority to US08/951,819 priority patent/US6365933B1/en
Priority to CNB991248570A priority patent/CN1178270C/zh
Priority to CNB97122885XA priority patent/CN1163974C/zh
Priority to KR1019970052690A priority patent/KR100483302B1/ko
Priority to CNB991248562A priority patent/CN1277312C/zh
Publication of JPH10135469A publication Critical patent/JPH10135469A/ja
Priority to US10/024,850 priority patent/US7023052B2/en
Priority to KR1020020061395A priority patent/KR100488311B1/ko
Publication of JPH10135469A5 publication Critical patent/JPH10135469A5/ja
Publication of JP3597331B2 publication Critical patent/JP3597331B2/ja
Application granted granted Critical
Priority to US11/081,564 priority patent/US7138658B2/en
Priority to US11/533,212 priority patent/US8368142B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP30125096A 1996-10-15 1996-10-24 半導体装置の作製方法 Expired - Fee Related JP3597331B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP30125096A JP3597331B2 (ja) 1996-10-24 1996-10-24 半導体装置の作製方法
TW086114475A TW451284B (en) 1996-10-15 1997-10-03 Semiconductor device and method of manufacturing the same
US08/951,819 US6365933B1 (en) 1996-10-15 1997-10-14 Semiconductor device and method of manufacturing the same
KR1019970052690A KR100483302B1 (ko) 1996-10-15 1997-10-15 반도체장치
CNB991248562A CN1277312C (zh) 1996-10-15 1997-10-15 半导体器件及其制造方法
CNB97122885XA CN1163974C (zh) 1996-10-15 1997-10-15 半导体器件及其制造方法
CNB991248570A CN1178270C (zh) 1996-10-15 1997-10-15 半导体器件及其制造方法
US10/024,850 US7023052B2 (en) 1996-10-15 2001-12-19 Semiconductor device having crystalline semiconductor layer
KR1020020061395A KR100488311B1 (ko) 1996-10-15 2002-10-09 반도체장치
US11/081,564 US7138658B2 (en) 1996-10-15 2005-03-17 Semiconductor device and method of manufacturing the same
US11/533,212 US8368142B2 (en) 1996-10-15 2006-09-19 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30125096A JP3597331B2 (ja) 1996-10-24 1996-10-24 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH10135469A JPH10135469A (ja) 1998-05-22
JPH10135469A5 true JPH10135469A5 (enExample) 2004-10-21
JP3597331B2 JP3597331B2 (ja) 2004-12-08

Family

ID=17894579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30125096A Expired - Fee Related JP3597331B2 (ja) 1996-10-15 1996-10-24 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP3597331B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8957424B2 (en) 1999-11-19 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Electroluminescence display device

Families Citing this family (82)

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US7294535B1 (en) 1998-07-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7153729B1 (en) * 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
JP4493750B2 (ja) * 1998-07-15 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4493749B2 (ja) * 1998-07-15 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4493751B2 (ja) * 1998-07-17 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4493752B2 (ja) * 1998-07-17 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7084016B1 (en) 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7282398B2 (en) 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6274887B1 (en) 1998-11-02 2001-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6617644B1 (en) 1998-11-09 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7141821B1 (en) 1998-11-10 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity gradient in the impurity regions and method of manufacture
US6512271B1 (en) 1998-11-16 2003-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6518594B1 (en) 1998-11-16 2003-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devices
US6420758B1 (en) 1998-11-17 2002-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity region overlapping a gate electrode
US6489952B1 (en) 1998-11-17 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Active matrix type semiconductor display device
US6909114B1 (en) 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
US6365917B1 (en) 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6501098B2 (en) 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
EP2264771A3 (en) 1998-12-03 2015-04-29 Semiconductor Energy Laboratory Co., Ltd. MOS thin film transistor and method of fabricating same
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US6259138B1 (en) 1998-12-18 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6524895B2 (en) 1998-12-25 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4202502B2 (ja) 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
US6380558B1 (en) 1998-12-29 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP2000208771A (ja) 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
US6891236B1 (en) 1999-01-14 2005-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6531713B1 (en) 1999-03-19 2003-03-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
US6858898B1 (en) 1999-03-23 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6461899B1 (en) 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
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TW490713B (en) 1999-07-22 2002-06-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4562835B2 (ja) 1999-11-05 2010-10-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN1217417C (zh) 1999-12-10 2005-08-31 株式会社半导体能源研究所 半导体器件及其制造方法
JP2001177101A (ja) 1999-12-20 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6702407B2 (en) 2000-01-31 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Color image display device, method of driving the same, and electronic equipment
JP4493779B2 (ja) 2000-01-31 2010-06-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6856307B2 (en) 2000-02-01 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and method of driving the same
TW495854B (en) 2000-03-06 2002-07-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4118484B2 (ja) * 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW513753B (en) 2000-03-27 2002-12-11 Semiconductor Energy Lab Semiconductor display device and manufacturing method thereof
DE20006642U1 (de) 2000-04-11 2000-08-17 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto, Calif. Optische Vorrichtung
US7525165B2 (en) 2000-04-17 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US7078321B2 (en) * 2000-06-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
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US6562671B2 (en) 2000-09-22 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
SG138468A1 (en) 2001-02-28 2008-01-28 Semiconductor Energy Lab A method of manufacturing a semiconductor device
US6740938B2 (en) 2001-04-16 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Transistor provided with first and second gate electrodes with channel region therebetween
US6906344B2 (en) 2001-05-24 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with plural channels and corresponding plural overlapping electrodes
US6952023B2 (en) 2001-07-17 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4618948B2 (ja) 2001-08-24 2011-01-26 株式会社半導体エネルギー研究所 半導体装置の評価方法
US6700096B2 (en) 2001-10-30 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
US6962860B2 (en) 2001-11-09 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7050878B2 (en) 2001-11-22 2006-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductror fabricating apparatus
US7105048B2 (en) 2001-11-30 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
KR100967824B1 (ko) 2001-11-30 2010-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제작방법
EP1329946A3 (en) 2001-12-11 2005-04-06 Sel Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including a laser crystallization step
US7214573B2 (en) 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
US7135389B2 (en) 2001-12-20 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Irradiation method of laser beam
JP3992976B2 (ja) * 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4141138B2 (ja) 2001-12-21 2008-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4519400B2 (ja) * 2001-12-27 2010-08-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4030758B2 (ja) 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4011344B2 (ja) 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003204067A (ja) 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
US6933527B2 (en) 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
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US6847050B2 (en) 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8957424B2 (en) 1999-11-19 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Electroluminescence display device

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