JP3597331B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3597331B2
JP3597331B2 JP30125096A JP30125096A JP3597331B2 JP 3597331 B2 JP3597331 B2 JP 3597331B2 JP 30125096 A JP30125096 A JP 30125096A JP 30125096 A JP30125096 A JP 30125096A JP 3597331 B2 JP3597331 B2 JP 3597331B2
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JP
Japan
Prior art keywords
film
silicon film
forming
active layer
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP30125096A
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English (en)
Japanese (ja)
Other versions
JPH10135469A (ja
JPH10135469A5 (enExample
Inventor
舜平 山崎
久 大谷
潤 小山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP30125096A priority Critical patent/JP3597331B2/ja
Priority to TW086114475A priority patent/TW451284B/zh
Priority to US08/951,819 priority patent/US6365933B1/en
Priority to CNB991248570A priority patent/CN1178270C/zh
Priority to CNB991248562A priority patent/CN1277312C/zh
Priority to CNB97122885XA priority patent/CN1163974C/zh
Priority to KR1019970052690A priority patent/KR100483302B1/ko
Publication of JPH10135469A publication Critical patent/JPH10135469A/ja
Priority to US10/024,850 priority patent/US7023052B2/en
Priority to KR1020020061395A priority patent/KR100488311B1/ko
Publication of JPH10135469A5 publication Critical patent/JPH10135469A5/ja
Application granted granted Critical
Publication of JP3597331B2 publication Critical patent/JP3597331B2/ja
Priority to US11/081,564 priority patent/US7138658B2/en
Priority to US11/533,212 priority patent/US8368142B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP30125096A 1996-10-15 1996-10-24 半導体装置の作製方法 Expired - Fee Related JP3597331B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP30125096A JP3597331B2 (ja) 1996-10-24 1996-10-24 半導体装置の作製方法
TW086114475A TW451284B (en) 1996-10-15 1997-10-03 Semiconductor device and method of manufacturing the same
US08/951,819 US6365933B1 (en) 1996-10-15 1997-10-14 Semiconductor device and method of manufacturing the same
KR1019970052690A KR100483302B1 (ko) 1996-10-15 1997-10-15 반도체장치
CNB991248562A CN1277312C (zh) 1996-10-15 1997-10-15 半导体器件及其制造方法
CNB97122885XA CN1163974C (zh) 1996-10-15 1997-10-15 半导体器件及其制造方法
CNB991248570A CN1178270C (zh) 1996-10-15 1997-10-15 半导体器件及其制造方法
US10/024,850 US7023052B2 (en) 1996-10-15 2001-12-19 Semiconductor device having crystalline semiconductor layer
KR1020020061395A KR100488311B1 (ko) 1996-10-15 2002-10-09 반도체장치
US11/081,564 US7138658B2 (en) 1996-10-15 2005-03-17 Semiconductor device and method of manufacturing the same
US11/533,212 US8368142B2 (en) 1996-10-15 2006-09-19 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30125096A JP3597331B2 (ja) 1996-10-24 1996-10-24 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH10135469A JPH10135469A (ja) 1998-05-22
JPH10135469A5 JPH10135469A5 (enExample) 2004-10-21
JP3597331B2 true JP3597331B2 (ja) 2004-12-08

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JP30125096A Expired - Fee Related JP3597331B2 (ja) 1996-10-15 1996-10-24 半導体装置の作製方法

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JP (1) JP3597331B2 (enExample)

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US7084016B1 (en) 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
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US6891236B1 (en) 1999-01-14 2005-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
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Publication number Publication date
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