JP4027449B2 - 半導体薄膜及び半導体装置の作製方法 - Google Patents
半導体薄膜及び半導体装置の作製方法 Download PDFInfo
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- JP4027449B2 JP4027449B2 JP33634196A JP33634196A JP4027449B2 JP 4027449 B2 JP4027449 B2 JP 4027449B2 JP 33634196 A JP33634196 A JP 33634196A JP 33634196 A JP33634196 A JP 33634196A JP 4027449 B2 JP4027449 B2 JP 4027449B2
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- Prior art keywords
- film
- oxide film
- silicon
- heat treatment
- region
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- Expired - Fee Related
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- 239000010409 thin film Substances 0.000 title claims description 92
- 238000000034 method Methods 0.000 title claims description 90
- 239000004065 semiconductor Substances 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000010408 film Substances 0.000 claims description 416
- 239000013078 crystal Substances 0.000 claims description 109
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 86
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 71
- 238000010438 heat treatment Methods 0.000 claims description 65
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 64
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 229910052736 halogen Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- 238000002425 crystallisation Methods 0.000 claims description 40
- 230000008025 crystallization Effects 0.000 claims description 40
- 150000002367 halogens Chemical class 0.000 claims description 40
- 239000012298 atmosphere Substances 0.000 claims description 39
- 229910052759 nickel Inorganic materials 0.000 claims description 39
- 239000010453 quartz Substances 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 13
- 230000001737 promoting effect Effects 0.000 claims description 12
- 238000005247 gettering Methods 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000012141 concentrate Substances 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 74
- 239000010410 layer Substances 0.000 description 74
- 239000012535 impurity Substances 0.000 description 45
- 239000010407 anodic oxide Substances 0.000 description 33
- 230000008569 process Effects 0.000 description 30
- 150000002500 ions Chemical class 0.000 description 22
- 229910052782 aluminium Inorganic materials 0.000 description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 21
- 238000007254 oxidation reaction Methods 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 20
- 239000011159 matrix material Substances 0.000 description 19
- 230000003647 oxidation Effects 0.000 description 19
- 239000011229 interlayer Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- 239000000460 chlorine Substances 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 238000005204 segregation Methods 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 11
- 229910052801 chlorine Inorganic materials 0.000 description 11
- 230000006870 function Effects 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
- 239000008151 electrolyte solution Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 4
- 229910021334 nickel silicide Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000003472 neutralizing effect Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000012266 salt solution Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 235000002906 tartaric acid Nutrition 0.000 description 3
- 239000011975 tartaric acid Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical compound [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 halogen hydrides Chemical class 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002816 nickel compounds Chemical class 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33634196A JP4027449B2 (ja) | 1996-02-23 | 1996-12-02 | 半導体薄膜及び半導体装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6189896 | 1996-02-23 | ||
| JP6189796 | 1996-02-23 | ||
| JP8-61898 | 1996-02-23 | ||
| JP8-61897 | 1996-02-23 | ||
| JP33634196A JP4027449B2 (ja) | 1996-02-23 | 1996-12-02 | 半導体薄膜及び半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH09289168A JPH09289168A (ja) | 1997-11-04 |
| JPH09289168A5 JPH09289168A5 (enExample) | 2004-11-18 |
| JP4027449B2 true JP4027449B2 (ja) | 2007-12-26 |
Family
ID=27297673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33634196A Expired - Fee Related JP4027449B2 (ja) | 1996-02-23 | 1996-12-02 | 半導体薄膜及び半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4027449B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5063640B2 (ja) * | 2009-04-27 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI541981B (zh) * | 2010-11-12 | 2016-07-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02143417A (ja) * | 1988-11-24 | 1990-06-01 | Sharp Corp | 半導体装置の製造方法 |
| JPH06132218A (ja) * | 1992-10-15 | 1994-05-13 | Sony Corp | 半導体結晶の成長方法及びｍｏｓ型トランジスタの作製方法 |
| JP2649325B2 (ja) * | 1993-07-30 | 1997-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3041177B2 (ja) * | 1993-12-27 | 2000-05-15 | シャープ株式会社 | 半導体装置の製造方法 |
| JP3229750B2 (ja) * | 1994-02-22 | 2001-11-19 | 三洋電機株式会社 | 多結晶半導体膜、それを用いた半導体装置及び太陽電池 |
| JP3216861B2 (ja) * | 1995-04-10 | 2001-10-09 | シャープ株式会社 | 多結晶シリコン膜の形成方法および薄膜トランジスタの製造方法 |
| JP3476320B2 (ja) * | 1996-02-23 | 2003-12-10 | 株式会社半導体エネルギー研究所 | 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法 |
-
1996
- 1996-12-02 JP JP33634196A patent/JP4027449B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09289168A (ja) | 1997-11-04 |
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