JP4307635B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4307635B2
JP4307635B2 JP17612799A JP17612799A JP4307635B2 JP 4307635 B2 JP4307635 B2 JP 4307635B2 JP 17612799 A JP17612799 A JP 17612799A JP 17612799 A JP17612799 A JP 17612799A JP 4307635 B2 JP4307635 B2 JP 4307635B2
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Japan
Prior art keywords
film
semiconductor film
protective insulating
insulating layer
island
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Expired - Fee Related
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JP17612799A
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Japanese (ja)
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JP2001007335A (ja
JP2001007335A5 (enExample
Inventor
健司 笠原
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP17612799A priority Critical patent/JP4307635B2/ja
Priority to US09/598,827 priority patent/US6358766B1/en
Publication of JP2001007335A publication Critical patent/JP2001007335A/ja
Publication of JP2001007335A5 publication Critical patent/JP2001007335A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters

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  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP17612799A 1999-06-22 1999-06-22 半導体装置の作製方法 Expired - Fee Related JP4307635B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP17612799A JP4307635B2 (ja) 1999-06-22 1999-06-22 半導体装置の作製方法
US09/598,827 US6358766B1 (en) 1999-06-22 2000-06-21 Method of fabricating a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17612799A JP4307635B2 (ja) 1999-06-22 1999-06-22 半導体装置の作製方法

Publications (3)

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JP2001007335A JP2001007335A (ja) 2001-01-12
JP2001007335A5 JP2001007335A5 (enExample) 2006-07-20
JP4307635B2 true JP4307635B2 (ja) 2009-08-05

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JP17612799A Expired - Fee Related JP4307635B2 (ja) 1999-06-22 1999-06-22 半導体装置の作製方法

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US (1) US6358766B1 (enExample)
JP (1) JP4307635B2 (enExample)

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JP5025057B2 (ja) * 2001-05-10 2012-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP4267266B2 (ja) * 2001-07-10 2009-05-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP4024510B2 (ja) * 2001-10-10 2007-12-19 株式会社半導体エネルギー研究所 記録媒体、および基材
JP2003168645A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 半導体薄膜装置、その製造方法及び画像表示装置
KR100477103B1 (ko) 2001-12-19 2005-03-18 삼성에스디아이 주식회사 금속유도화 측면결정화방법을 이용한 멀티플 게이트 박막트랜지스터 및 그의 제조방법
KR100477102B1 (ko) 2001-12-19 2005-03-17 삼성에스디아이 주식회사 금속유도화 측면결정화방법을 이용한 멀티플 게이트씨모스 박막 트랜지스터 및 그의 제조방법
KR100462862B1 (ko) * 2002-01-18 2004-12-17 삼성에스디아이 주식회사 티에프티용 다결정 실리콘 박막 및 이를 이용한디스플레이 디바이스
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US7791047B2 (en) * 2003-12-12 2010-09-07 Semequip, Inc. Method and apparatus for extracting ions from an ion source for use in ion implantation
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US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7829394B2 (en) * 2005-05-26 2010-11-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
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WO2007046290A1 (en) * 2005-10-18 2007-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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TWI438823B (zh) * 2006-08-31 2014-05-21 Semiconductor Energy Lab 晶體半導體膜的製造方法和半導體裝置
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JP5525224B2 (ja) 2008-09-30 2014-06-18 株式会社半導体エネルギー研究所 表示装置
TWI555205B (zh) 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR20130089044A (ko) * 2012-02-01 2013-08-09 삼성디스플레이 주식회사 반도체 장치 및 그를 구비하는 평판표시장치
JP6128906B2 (ja) * 2012-04-13 2017-05-17 株式会社半導体エネルギー研究所 半導体装置

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JP2001007335A (ja) 2001-01-12
US6358766B1 (en) 2002-03-19

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