JP2008510319A5 - - Google Patents

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Publication number
JP2008510319A5
JP2008510319A5 JP2007527883A JP2007527883A JP2008510319A5 JP 2008510319 A5 JP2008510319 A5 JP 2008510319A5 JP 2007527883 A JP2007527883 A JP 2007527883A JP 2007527883 A JP2007527883 A JP 2007527883A JP 2008510319 A5 JP2008510319 A5 JP 2008510319A5
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JP
Japan
Prior art keywords
plasma
amount
gas
gate dielectric
radicals
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JP2007527883A
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English (en)
Japanese (ja)
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JP2008510319A (ja
JP4950888B2 (ja
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Priority claimed from US10/920,990 external-priority patent/US7163877B2/en
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Publication of JP2008510319A publication Critical patent/JP2008510319A/ja
Publication of JP2008510319A5 publication Critical patent/JP2008510319A5/ja
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Publication of JP4950888B2 publication Critical patent/JP4950888B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007527883A 2004-08-18 2005-08-11 プラズマ処理を用いて高誘電率層を有するゲート誘電体積層体を改善する方法 Expired - Fee Related JP4950888B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/920,990 2004-08-18
US10/920,990 US7163877B2 (en) 2004-08-18 2004-08-18 Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing
PCT/US2005/028610 WO2006023373A1 (en) 2004-08-18 2005-08-11 A method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing

Publications (3)

Publication Number Publication Date
JP2008510319A JP2008510319A (ja) 2008-04-03
JP2008510319A5 true JP2008510319A5 (enExample) 2008-09-25
JP4950888B2 JP4950888B2 (ja) 2012-06-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007527883A Expired - Fee Related JP4950888B2 (ja) 2004-08-18 2005-08-11 プラズマ処理を用いて高誘電率層を有するゲート誘電体積層体を改善する方法

Country Status (6)

Country Link
US (1) US7163877B2 (enExample)
JP (1) JP4950888B2 (enExample)
KR (1) KR101163264B1 (enExample)
CN (1) CN100568462C (enExample)
TW (1) TWI268553B (enExample)
WO (1) WO2006023373A1 (enExample)

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US20170084464A1 (en) * 2015-09-18 2017-03-23 Tokyo Electron Limited Germanium-containing semiconductor device and method of forming
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US11152214B2 (en) * 2016-04-20 2021-10-19 International Business Machines Corporation Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device
TWI635539B (zh) * 2017-09-15 2018-09-11 Corremax International Co., Ltd. 高介電常數介電層、其製造方法及執行該方法之多功能設備
KR102384865B1 (ko) 2018-01-31 2022-04-08 삼성전자주식회사 반도체 소자 제조 방법
CN112133634A (zh) * 2018-05-25 2020-12-25 中国科学院微电子研究所 基于微波等离子体氧化的凹槽mosfet器件的制造方法
US11417517B2 (en) * 2019-05-03 2022-08-16 Applied Materials, Inc. Treatments to enhance material structures
US20210057215A1 (en) * 2019-05-03 2021-02-25 Applied Materials, Inc. Treatments to enhance material structures
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TWI902467B (zh) * 2020-11-06 2025-10-21 美商應用材料股份有限公司 增強材料結構的處理
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