CN102810504A - 厚铝生长工艺方法 - Google Patents
厚铝生长工艺方法 Download PDFInfo
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- CN102810504A CN102810504A CN2011101437568A CN201110143756A CN102810504A CN 102810504 A CN102810504 A CN 102810504A CN 2011101437568 A CN2011101437568 A CN 2011101437568A CN 201110143756 A CN201110143756 A CN 201110143756A CN 102810504 A CN102810504 A CN 102810504A
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CN2011101437568A CN102810504A (zh) | 2011-05-31 | 2011-05-31 | 厚铝生长工艺方法 |
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CN2011101437568A CN102810504A (zh) | 2011-05-31 | 2011-05-31 | 厚铝生长工艺方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1141506A (zh) * | 1995-03-04 | 1997-01-29 | 现代电子产业株式会社 | 形成半导体器件金属互连的方法 |
CN1481020A (zh) * | 2002-07-26 | 2004-03-10 | �����ɷ� | 具抗反射涂层的内连线制造方法及其结构 |
CN1765019A (zh) * | 2003-01-29 | 2006-04-26 | 飞思卡尔半导体公司 | 用于半导体器件的arc层 |
CN101452846A (zh) * | 2007-11-30 | 2009-06-10 | 上海华虹Nec电子有限公司 | 厚铝成膜工艺方法 |
CN101827783A (zh) * | 2007-06-21 | 2010-09-08 | 3M创新有限公司 | 制备层次制品的方法 |
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2011
- 2011-05-31 CN CN2011101437568A patent/CN102810504A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1141506A (zh) * | 1995-03-04 | 1997-01-29 | 现代电子产业株式会社 | 形成半导体器件金属互连的方法 |
CN1481020A (zh) * | 2002-07-26 | 2004-03-10 | �����ɷ� | 具抗反射涂层的内连线制造方法及其结构 |
CN1765019A (zh) * | 2003-01-29 | 2006-04-26 | 飞思卡尔半导体公司 | 用于半导体器件的arc层 |
CN101827783A (zh) * | 2007-06-21 | 2010-09-08 | 3M创新有限公司 | 制备层次制品的方法 |
CN101452846A (zh) * | 2007-11-30 | 2009-06-10 | 上海华虹Nec电子有限公司 | 厚铝成膜工艺方法 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: WUXI HUARUN SHANGHUA TECHNOLOGY CO., LTD. Effective date: 20140519 Owner name: WUXI HUARUN SHANGHUA TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: WUXI CSMC SEMICONDUCTOR CO., LTD. Effective date: 20140519 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140519 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Applicant before: Wuxi CSMC Semiconductor Co., Ltd. Applicant before: Wuxi Huarun Shanghua Technology Co., Ltd. |
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C10 | Entry into substantive examination | ||
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20121205 |
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RJ01 | Rejection of invention patent application after publication |