CN103872199A - 硅衬底上生长氮化物外延层的方法及其半导体器件 - Google Patents
硅衬底上生长氮化物外延层的方法及其半导体器件 Download PDFInfo
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- CN103872199A CN103872199A CN201210541617.5A CN201210541617A CN103872199A CN 103872199 A CN103872199 A CN 103872199A CN 201210541617 A CN201210541617 A CN 201210541617A CN 103872199 A CN103872199 A CN 103872199A
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- 239000000758 substrate Substances 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 86
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 239000010703 silicon Substances 0.000 title claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 87
- 230000008021 deposition Effects 0.000 claims abstract description 58
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 46
- 230000004888 barrier function Effects 0.000 claims abstract description 44
- 230000008018 melting Effects 0.000 claims abstract description 15
- 238000002844 melting Methods 0.000 claims abstract description 15
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- 239000010410 layer Substances 0.000 claims description 263
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 33
- 238000005240 physical vapour deposition Methods 0.000 claims description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 11
- 238000000407 epitaxy Methods 0.000 claims description 10
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- 229910052786 argon Inorganic materials 0.000 claims description 9
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- 238000007906 compression Methods 0.000 claims description 7
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 7
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000007792 gaseous phase Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
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- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 3
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- 229910017083 AlN Inorganic materials 0.000 description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 18
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- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 4
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- 229910052751 metal Inorganic materials 0.000 description 4
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- 229910052594 sapphire Inorganic materials 0.000 description 3
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- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229940044658 gallium nitrate Drugs 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104141171A (zh) * | 2014-07-16 | 2014-11-12 | 中国科学院半导体研究所 | 一种GaN复合薄膜及在Si衬底上形成GaN复合薄膜的方法 |
CN104409336A (zh) * | 2014-11-18 | 2015-03-11 | 中国科学院半导体研究所 | 一种利用低熔点金属消除外延层生长热失配的方法 |
CN106025026A (zh) * | 2016-07-15 | 2016-10-12 | 厦门乾照光电股份有限公司 | 一种用于发光二极管的AlN缓冲层及其制作方法 |
CN106784219A (zh) * | 2017-01-22 | 2017-05-31 | 厦门乾照光电股份有限公司 | 一种led及其制作方法 |
CN107293618A (zh) * | 2017-06-30 | 2017-10-24 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片及其制备方法 |
CN107299396A (zh) * | 2017-06-30 | 2017-10-27 | 郑州大学 | 一种晶体制备方法及反应炉 |
CN107578988A (zh) * | 2017-09-13 | 2018-01-12 | 中国电子科技集团公司第十三研究所 | 碳化硅外延层钝化方法 |
CN109559991A (zh) * | 2018-08-20 | 2019-04-02 | 西安电子科技大学 | 基于溅射AlN基板的混合极性AlGaN/GaN高电子迁移率晶体管及其制备方法 |
CN109616401A (zh) * | 2018-10-17 | 2019-04-12 | 华灿光电(苏州)有限公司 | 一种AlN模板及其制备方法、发光二极管外延片 |
CN113481476A (zh) * | 2021-06-11 | 2021-10-08 | 武汉大学 | 一种耐高温AlN/ZnO纳米复合压电涂层及其制备方法 |
CN115050866A (zh) * | 2022-08-16 | 2022-09-13 | 江苏第三代半导体研究院有限公司 | 极化可控的量子点Micro-LED同质外延结构及其制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202513198U (zh) * | 2011-12-22 | 2012-10-31 | 深圳信息职业技术学院 | 一种半导体外延生长结构 |
-
2012
- 2012-12-13 CN CN201210541617.5A patent/CN103872199B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202513198U (zh) * | 2011-12-22 | 2012-10-31 | 深圳信息职业技术学院 | 一种半导体外延生长结构 |
Non-Patent Citations (1)
Title |
---|
郭伦春等: "利用δAl/AlN做缓冲层在Si(111)上生长GaN", 《全国化合物半导体材料、微波器件和光电器件学术会议,2006》 * |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104141171A (zh) * | 2014-07-16 | 2014-11-12 | 中国科学院半导体研究所 | 一种GaN复合薄膜及在Si衬底上形成GaN复合薄膜的方法 |
CN104141171B (zh) * | 2014-07-16 | 2016-09-28 | 中国科学院半导体研究所 | 一种GaN复合薄膜及在Si衬底上形成GaN复合薄膜的方法 |
CN104409336A (zh) * | 2014-11-18 | 2015-03-11 | 中国科学院半导体研究所 | 一种利用低熔点金属消除外延层生长热失配的方法 |
CN104409336B (zh) * | 2014-11-18 | 2017-07-14 | 中国科学院半导体研究所 | 一种利用低熔点金属消除外延层生长热失配的方法 |
CN106025026A (zh) * | 2016-07-15 | 2016-10-12 | 厦门乾照光电股份有限公司 | 一种用于发光二极管的AlN缓冲层及其制作方法 |
CN106025026B (zh) * | 2016-07-15 | 2018-06-19 | 厦门乾照光电股份有限公司 | 一种用于发光二极管的AlN缓冲层及其制作方法 |
CN106784219A (zh) * | 2017-01-22 | 2017-05-31 | 厦门乾照光电股份有限公司 | 一种led及其制作方法 |
CN107293618A (zh) * | 2017-06-30 | 2017-10-24 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片及其制备方法 |
CN107299396A (zh) * | 2017-06-30 | 2017-10-27 | 郑州大学 | 一种晶体制备方法及反应炉 |
CN107299396B (zh) * | 2017-06-30 | 2020-02-07 | 郑州大学 | 一种晶体制备方法及反应炉 |
WO2019052139A1 (zh) * | 2017-09-13 | 2019-03-21 | 中国电子科技集团公司第十三研究所 | 碳化硅外延层钝化方法 |
CN107578988A (zh) * | 2017-09-13 | 2018-01-12 | 中国电子科技集团公司第十三研究所 | 碳化硅外延层钝化方法 |
US11183385B2 (en) | 2017-09-13 | 2021-11-23 | The 13Th Research Institute Of China Electronics | Method for passivating silicon carbide epitaxial layer |
CN109559991A (zh) * | 2018-08-20 | 2019-04-02 | 西安电子科技大学 | 基于溅射AlN基板的混合极性AlGaN/GaN高电子迁移率晶体管及其制备方法 |
CN109559991B (zh) * | 2018-08-20 | 2020-09-15 | 西安电子科技大学 | 基于溅射AlN基板的混合极性AlGaN/GaN高电子迁移率晶体管及其制备方法 |
CN109616401A (zh) * | 2018-10-17 | 2019-04-12 | 华灿光电(苏州)有限公司 | 一种AlN模板及其制备方法、发光二极管外延片 |
CN109616401B (zh) * | 2018-10-17 | 2021-03-02 | 华灿光电(苏州)有限公司 | 一种AlN模板及其制备方法、发光二极管外延片 |
CN113481476A (zh) * | 2021-06-11 | 2021-10-08 | 武汉大学 | 一种耐高温AlN/ZnO纳米复合压电涂层及其制备方法 |
CN115050866A (zh) * | 2022-08-16 | 2022-09-13 | 江苏第三代半导体研究院有限公司 | 极化可控的量子点Micro-LED同质外延结构及其制备方法 |
CN115050866B (zh) * | 2022-08-16 | 2022-11-08 | 江苏第三代半导体研究院有限公司 | 极化可控的量子点Micro-LED同质外延结构及其制备方法 |
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