CN106025026A - 一种用于发光二极管的AlN缓冲层及其制作方法 - Google Patents
一种用于发光二极管的AlN缓冲层及其制作方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 126
- 239000000758 substrate Substances 0.000 claims abstract description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 78
- 239000001301 oxygen Substances 0.000 claims description 78
- 229910052760 oxygen Inorganic materials 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 16
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- 230000009257 reactivity Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000013077 target material Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 88
- 229910017083 AlN Inorganic materials 0.000 description 87
- 229910002601 GaN Inorganic materials 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
本发明公开一种用于发光二极管的AlN缓冲层,该AlN缓冲层生长于衬底上,由AlN材料层和AlN材料掺氧层构成,在衬底上生长底层AlN材料掺氧层,在底层AlN材料掺氧层上依次交替循环生长AlN材料层和AlN材料掺氧层,顶层为AlN材料掺氧层;顶层AlN材料掺氧层上生长外延层。本发明还公开一种用于发光二极管的AlN缓冲层制作方法。本发明形成高致密性的AlN缓冲层,有效释放缓冲层与衬底的应力,使得缓冲层的应力释放得更好,有利于改善生长于缓冲层上的氮化镓材料的晶体质量。
Description
技术领域
本发明涉及发光二极管技术领域,尤其是指一种用于发光二极管的AlN缓冲层及其制作方法。
背景技术
现有技术中,申请号为201380074273.4公开一种形成用于氮化镓基光电或电子器件的氮化铝(AlN)缓冲层的方法,其采用PVD在应用材料衬底上生长AlN材料,含铝靶材与含氮气体或以含氮气体为基础的等离子体发生反应的生长过程中掺入氧,该方法有益于AlN材料和后续采用MOCVD 生长的GaN材料更匹配,能有效调节应力,改善后续生长的发光二极管外延材料的晶体质量。
然而,所述方法的缺陷在于:由于掺入1E18-1E23的氧含量,导致PVD生长的AlN材料的致密性变差,在采用MOCVD刚开始还未外延生长GaN时的升温过程,使得AlN材料容易被高温烘烤减薄,以及高温重结晶使整个AlN材料的界面变得凹凸不平。AlN材料充当外延的缓冲层,如果缓冲层的厚度偏薄且界面凹凸不平,容易导致后续外延的位错密度升高,引起发光二极管的发光效率降低以及可靠性变差。
发明内容
本发明的目的在于提供一种用于发光二极管的AlN缓冲层及其制作方法,以形成高致密性的AlN缓冲层,有效释放缓冲层与衬底的应力,使得缓冲层的应力释放得更好,有利于改善生长于缓冲层上的氮化镓材料的晶体质量。
为达成上述目的,本发明的解决方案为:
一种用于发光二极管的AlN缓冲层,该AlN缓冲层生长于衬底上,由AlN材料层和AlN材料掺氧层构成,在衬底上生长底层AlN材料掺氧层,在底层AlN材料掺氧层上依次交替循环生长AlN材料层和AlN材料掺氧层,顶层为AlN材料掺氧层;顶层AlN材料掺氧层上生长外延层。
进一步,顶层AlN材料掺氧层与外延层之间生长非故意掺杂层。
进一步,衬底为蓝宝石衬底。
进一步,AlN材料层的厚度大于AlN材料掺氧层的厚度;一个周期AlN材料层和AlN材料掺氧层的厚度大于4nm而小于10nm。
进一步,缓冲层的整体厚度为15-50nm。
进一步,并入AlN材料的氧含量为1E18-1E23,AlN材料掺氧含量从衬底往上呈减小趋势。
一种用于发光二极管的AlN缓冲层制作方法,包括以下步骤:
将AlN材料掺氧层和AlN材料层反应性交替循环溅射于衬底上,该反应性交替循环溅射包括使置于物理气相沉积腔室内的含铝靶材与含氮气体或以含氮气体为基础的等离子体发生反应和将氧并入所述AlN层中;生长AlN材料掺氧层时,轰击Al靶材,同时轰击蓝宝石靶材;生长AlN材料层时,只轰击Al靶材;掺氧与不掺氧采用无缝生长的切换方法。
进一步,并入AlN材料的氧含量为1E18-1E23。
进一步,AlN材料掺氧含量从衬底往上呈减小趋势。
采用上述方案后,本发明采用类超晶格的生长方法使用PVD生长AlN材料,其掺氧与不掺氧通过靶材的控制实现的方法,避免采用新生长方法后的生长周期变长,且无停止生长保证了晶体质量。
所生长的缓冲后结构:AlN材料掺氧/AlN材料/AlN材料掺氧/AlN材料循环的类超晶格结构。因为AlN材料掺氧会使得AlN材料的致密性变疏,但通过间隔长一层无掺氧的AlN材料改善其致密性变疏的趋势。且AlN材料掺氧/AlN材料/AlN材料掺氧/AlN材料循环的类超晶格结构有益于释放缓冲层与蓝宝石衬底的应力,使得缓冲层的应力释放得更好,有利于改善生长于缓冲层上的氮化镓材料的晶体质量。
在蓝宝石衬底上开始生长的缓冲层结构的初始第一层采用AlN材料掺氧。采用AlN材料掺氧与蓝宝石衬底接触,有利于过渡到AlN材料,减小不同材料层之间的应力。
缓冲层的最后一层采用AlN材料掺氧。采用AlN材料掺氧为最后一层来过渡,可以提高AlN材料与GaN材料的匹配度,减少AlN与GaN的失配度。虽然AlN材料与GaN材料近似匹配,但是还是存在2.5%的失配度,通过氧掺杂调节至与GaN材料匹配,使得GaN材料获得更好的晶体质量。
AlN材料层的厚度略大于AlN材料掺氧层的厚度,且一个周期AlN材料层和AlN材料掺氧层的厚度小于10nm;缓冲层的整体厚度为15-50nm。通过采用AlN材料层的厚度略大于AlN材料掺氧层的厚度,减少氧扩散导致的非掺氧的AlN材料层厚度偏薄,无法起到相应的作用。采用一个周期的厚度大于4nm,可通过PVD有效控制其厚度;采用一个周期AlN材料层和AlN材料掺氧层的厚度小于10nm,使得获取更好的应力释放。
所并入AlN材料的氧含量为1E18-1E23,AlN材料掺氧含量从衬底往上呈减小的趋势。在与蓝宝石衬底采用较高的含氧量,可有效过渡蓝宝石沉淀Al2O3与AlN材料之间的晶格匹配,减少两种失配材料的内应力。通过逐渐减小氧含量的方法,可以循序渐进地逐步调节缓冲层的内应力至与GaN材料匹配。最终不仅获取高致密度的AlN缓冲层,还有效减少缓冲层与氮化镓之间的应力匹配,获得高质量的发光二极管外延材料。
附图说明
图1是本发明的结构示意图。
标号说明
衬底1 AlN缓冲层2
AlN材料掺氧层21 AlN材料层22
非故意掺杂层3 外延层4
第一型导电层41。
具体实施方式
以下结合附图及具体实施例对本发明做详细描述。
请参阅图1所述,本发明揭示的一种用于发光二极管的AlN缓冲层,该AlN缓冲层2生长于衬底1上,由AlN材料掺氧层21和AlN材料层22构成,在衬底1上生长底层AlN材料掺氧层21,在底层AlN材料掺氧层21上依次交替循环生长AlN材料层22和AlN材料掺氧层21,顶层为AlN材料掺氧层21;顶层AlN材料掺氧层21上生长非故意掺杂层3(GaN),非故意掺杂层3上生长外延层4,图中只示出外延层4的第一型导电层41。衬底1为蓝宝石衬底。
AlN材料层22的厚度大于AlN材料掺氧层21的厚度;一个周期AlN材料层22和AlN材料掺氧层21的厚度大于4nm而小于10nm。缓冲层2的整体厚度为15-50nm。并入AlN材料的氧含量为1E18-1E23,AlN材料掺氧含量从衬底1往上呈减小趋势。
所述一种用于发光二极管的AlN缓冲层制作方法,包括以下步骤:
将AlN材料掺氧层21和AlN材料层22反应性交替循环溅射于衬底1上,该反应性交替循环溅射包括使置于物理气相沉积腔室内的含铝靶材与含氮气体或以含氮气体为基础的等离子体发生反应和将氧并入所述AlN层中;生长AlN材料掺氧层21时,轰击Al靶材,同时轰击蓝宝石靶材;生长AlN材料层22时,只轰击Al靶材;掺氧与不掺氧采用无缝生长的切换方法。衬底1为蓝宝石衬底。
所并入AlN材料的氧含量为1E18-1E23。AlN材料掺氧含量从衬底往上呈减小趋势。
以上所述仅为本发明的优选实施例,并非对本案设计的限制,凡依本案的设计关键所做的等同变化,均落入本案的保护范围。
Claims (9)
1.一种用于发光二极管的AlN缓冲层,该AlN缓冲层生长于衬底上,其特征在于:由AlN材料层和AlN材料掺氧层构成,在衬底上生长底层AlN材料掺氧层,在底层AlN材料掺氧层上依次交替循环生长AlN材料层和AlN材料掺氧层,顶层为AlN材料掺氧层;顶层AlN材料掺氧层上生长外延层。
2.如权利要求1所述的一种用于发光二极管的AlN缓冲层,其特征在于:顶层AlN材料掺氧层与外延层之间生长非故意掺杂层。
3.如权利要求1所述的一种用于发光二极管的AlN缓冲层,其特征在于:衬底为蓝宝石衬底。
4.如权利要求1所述的一种用于发光二极管的AlN缓冲层,其特征在于:AlN材料层的厚度大于AlN材料掺氧层的厚度;一个周期AlN材料层和AlN材料掺氧层的厚度大于4nm而小于10nm。
5.如权利要求1所述的一种用于发光二极管的AlN缓冲层,其特征在于:缓冲层的整体厚度为15-50nm。
6.如权利要求1所述的一种用于发光二极管的AlN缓冲层,其特征在于:并入AlN材料的氧含量为1E18-1E23,AlN材料掺氧含量从衬底往上呈减小趋势。
7.一种用于发光二极管的AlN缓冲层制作方法,其特征在于:包括以下步骤:
将AlN材料掺氧层和AlN材料层反应性交替循环溅射于衬底上,该反应性交替循环溅射包括使置于物理气相沉积腔室内的含铝靶材与含氮气体或以含氮气体为基础的等离子体发生反应和将氧并入所述AlN层中;生长AlN材料掺氧层时,轰击Al靶材,同时轰击蓝宝石靶材;生长AlN材料层时,只轰击Al靶材;掺氧与不掺氧采用无缝生长的切换方法。
8.如权利要求7所述的一种用于发光二极管的AlN缓冲层制作方法,其特征在于:并入AlN材料的氧含量为1E18-1E23。
9.如权利要求7所述的一种用于发光二极管的AlN缓冲层制作方法,其特征在于:AlN材料掺氧含量从衬底往上呈减小趋势。
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